MUN5212T1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Pin Count :

3

Max Collector Current :

100mA

Peak Reflow Temperature (Cel) :

260

RoHS Status :

ROHS3 Compliant

Max Operating Temperature :

150°C

Lead Free :

Lead Free

Continuous Collector Current :

100mA

Packaging :

Tape and Reel (TR)

Transistor Type :

NPN - Pre-Biased

Power Dissipation :

310mW

DC Current Gain (hFE) (Min) @ Ic, Vce :

60 @ 5mA 10V

Radiation Hardening :

No

Terminal Position :

Dual

Polarity :

NPN

ECCN Code :

EAR99

Halogen Free :

Halogen Free

Current Rating :

100mA

Package / Case :

SC-70, SOT-323

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Collector Emitter Voltage (VCEO) :

50V

Resistor - Base (R1) :

22 k Ω

Pbfree Code :

yes

Number of Elements :

1

Current - Collector Cutoff (Max) :

500nA

Terminal Finish :

Tin (Sn)

hFE Min :

60

Resistor - Emitter Base (R2) :

2.2 k Ω

Voltage - Rated DC :

50V

Time@Peak Reflow Temperature-Max (s) :

40

Surface Mount :

yes

Max Breakdown Voltage :

50V

Element Configuration :

Single

Published :

2006

Mounting Type :

Surface Mount

Base Part Number :

MUN52**T

Terminal Form :

Gull wing

Factory Lead Time :

4 Weeks

Collector Emitter Breakdown Voltage :

50V

Transistor Application :

SWITCHING

Min Operating Temperature :

-55°C

Max Power Dissipation :

202mW

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 1

Number of Pins :

3

Lifecycle Status :

ACTIVE (Last Updated: 15 hours ago)

JESD-609 Code :

e3

Vce Saturation (Max) @ Ib, Ic :

250mV @ 300μA, 10mA

Number of Terminations :

3