MUN5211T1

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Base Part Number :

MUN52**T

Collector Emitter Voltage (VCEO) :

50V

DC Current Gain (hFE) (Min) @ Ic, Vce :

35 @ 5mA 10V

Published :

2006

Resistor - Base (R1) :

10 k Ω

Terminal Form :

Gull wing

Pbfree Code :

yes

Mounting Type :

Surface Mount

Packaging :

Tape and Reel (TR)

Current Rating :

100mA

Number of Terminations :

3

ECCN Code :

EAR99

hFE Min :

35

Voltage - Rated DC :

50V

Current - Collector Cutoff (Max) :

500nA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

REACH SVHC :

No SVHC

Power Dissipation :

310mW

Continuous Collector Current :

100mA

Element Configuration :

Single

Collector Emitter Breakdown Voltage :

50V

Time@Peak Reflow Temperature-Max (s) :

40

Halogen Free :

Halogen Free

Surface Mount :

yes

Vce Saturation (Max) @ Ib, Ic :

250mV @ 300μA, 10mA

Transistor Application :

SWITCHING

Radiation Hardening :

No

Factory Lead Time :

5 Weeks

Max Operating Temperature :

150°C

Package / Case :

SC-70, SOT-323

Contact Plating :

Tin

RoHS Status :

ROHS3 Compliant

Peak Reflow Temperature (Cel) :

260

Pin Count :

3

Transistor Type :

NPN - Pre-Biased

Resistor - Emitter Base (R2) :

10 k Ω

Terminal Position :

Dual

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 1

Max Breakdown Voltage :

50V

Max Power Dissipation :

202mW

Lead Free :

Lead Free

Polarity :

NPN

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Number of Pins :

3

Max Collector Current :

100mA

JESD-609 Code :

e3

Number of Elements :

1

Min Operating Temperature :

-55°C