MUN5211T1

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Power Dissipation :

310mW

Min Operating Temperature :

-55°C

Transistor Application :

SWITCHING

hFE Min :

35

ECCN Code :

EAR99

Packaging :

Tape and Reel (TR)

Peak Reflow Temperature (Cel) :

260

Number of Pins :

3

JESD-609 Code :

e3

Current Rating :

100mA

Terminal Position :

Dual

REACH SVHC :

No SVHC

Collector Emitter Breakdown Voltage :

50V

Published :

2006

Pin Count :

3

Current - Collector Cutoff (Max) :

500nA

Transistor Type :

NPN - Pre-Biased

Mounting Type :

Surface Mount

Lead Free :

Lead Free

Resistor - Base (R1) :

10 k Ω

Surface Mount :

yes

Element Configuration :

Single

Collector Emitter Voltage (VCEO) :

50V

DC Current Gain (hFE) (Min) @ Ic, Vce :

35 @ 5mA 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Form :

Gull wing

Pbfree Code :

yes

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 1

Max Operating Temperature :

150°C

Vce Saturation (Max) @ Ib, Ic :

250mV @ 300μA, 10mA

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Polarity :

NPN

Time@Peak Reflow Temperature-Max (s) :

40

Continuous Collector Current :

100mA

RoHS Status :

ROHS3 Compliant

Factory Lead Time :

5 Weeks

Contact Plating :

Tin

Number of Elements :

1

Max Breakdown Voltage :

50V

Base Part Number :

MUN52**T

Max Power Dissipation :

202mW

Resistor - Emitter Base (R2) :

10 k Ω

Voltage - Rated DC :

50V

Radiation Hardening :

No

Max Collector Current :

100mA

Halogen Free :

Halogen Free

Package / Case :

SC-70, SOT-323

Number of Terminations :

3