MUN5211T1

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Max Power Dissipation :

202mW

Transistor Application :

SWITCHING

Vce Saturation (Max) @ Ib, Ic :

250mV @ 300μA, 10mA

ECCN Code :

EAR99

Time@Peak Reflow Temperature-Max (s) :

40

Halogen Free :

Halogen Free

Transistor Type :

NPN - Pre-Biased

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

RoHS Status :

ROHS3 Compliant

Resistor - Base (R1) :

10 k Ω

hFE Min :

35

Pbfree Code :

yes

Package / Case :

SC-70, SOT-323

Mounting Type :

Surface Mount

Lead Free :

Lead Free

Min Operating Temperature :

-55°C

Terminal Position :

Dual

Current - Collector Cutoff (Max) :

500nA

Base Part Number :

MUN52**T

Terminal Form :

Gull wing

Max Breakdown Voltage :

50V

Surface Mount :

yes

JESD-609 Code :

e3

Factory Lead Time :

5 Weeks

Power Dissipation :

310mW

DC Current Gain (hFE) (Min) @ Ic, Vce :

35 @ 5mA 10V

Polarity :

NPN

Packaging :

Tape and Reel (TR)

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Resistor - Emitter Base (R2) :

10 k Ω

Collector Emitter Voltage (VCEO) :

50V

Collector Emitter Breakdown Voltage :

50V

Element Configuration :

Single

Pin Count :

3

Radiation Hardening :

No

Number of Terminations :

3

Max Operating Temperature :

150°C

Published :

2006

Peak Reflow Temperature (Cel) :

260

Voltage - Rated DC :

50V

REACH SVHC :

No SVHC

Contact Plating :

Tin

Number of Pins :

3

Number of Elements :

1

Continuous Collector Current :

100mA

Max Collector Current :

100mA

Current Rating :

100mA