MUN5137T1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Max Operating Temperature :

150°C

Min Operating Temperature :

-55°C

Collector Emitter Voltage (VCEO) :

50V

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 5mA 10V

Surface Mount :

yes

Number of Terminations :

3

Mounting Type :

Surface Mount

Halogen Free :

Halogen Free

Transistor Type :

PNP - Pre-Biased

Max Power Dissipation :

202mW

Factory Lead Time :

10 Weeks

Package / Case :

SC-70, SOT-323

Voltage - Rated DC :

-50V

Polarity :

PNP

Published :

2009

Vce Saturation (Max) @ Ib, Ic :

250mV @ 300μA, 10mA

Terminal Form :

Gull wing

Terminal Position :

Dual

Max Collector Current :

100mA

Lifecycle Status :

ACTIVE (Last Updated: 1 week ago)

Peak Reflow Temperature (Cel) :

260

RoHS Status :

ROHS3 Compliant

Radiation Hardening :

No

Number of Elements :

1

Power Dissipation :

202mW

Base Part Number :

MUN51**T

Number of Pins :

3

Packaging :

Tape and Reel (TR)

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 0.47

Time@Peak Reflow Temperature-Max (s) :

40

Continuous Collector Current :

100mA

Current Rating :

-100mA

Resistor - Emitter Base (R2) :

22 k Ω

Collector Emitter Breakdown Voltage :

50V

Resistor - Base (R1) :

47 k Ω

Lead Free :

Lead Free

Pin Count :

3

Terminal Finish :

Tin (Sn)

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e3

Pbfree Code :

yes

Current - Collector Cutoff (Max) :

500nA

Transistor Application :

SWITCHING

hFE Min :

80

Element Configuration :

Single