MUN5116T1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Terminal Form :

Gull wing

hFE Min :

160

Power Dissipation :

202mW

Element Configuration :

Single

RoHS Status :

ROHS3 Compliant

Resistor - Base (R1) :

4.7 k Ω

HTS Code :

8541.21.00.95

Halogen Free :

Halogen Free

Continuous Collector Current :

100mA

Number of Pins :

3

ECCN Code :

EAR99

Pbfree Code :

yes

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Factory Lead Time :

4 Weeks

JESD-609 Code :

e3

Peak Reflow Temperature (Cel) :

260

Terminal Position :

Dual

Max Collector Current :

100mA

Transistor Application :

SWITCHING

Collector Emitter Voltage (VCEO) :

50V

Current Rating :

-100mA

Polarity :

PNP

Published :

2013

Vce Saturation (Max) @ Ib, Ic :

250mV @ 1mA, 10mA

Number of Elements :

1

Terminal Finish :

Tin (Sn)

Surface Mount :

yes

DC Current Gain (hFE) (Min) @ Ic, Vce :

160 @ 5mA 10V

Pin Count :

3

Packaging :

Tape and Reel (TR)

Current - Collector Cutoff (Max) :

500nA

Additional Feature :

BUILT-IN BIAS RESISTOR

Max Power Dissipation :

202mW

Transistor Type :

PNP - Pre-Biased

Lead Free :

Lead Free

Package / Case :

SC-70, SOT-323

Number of Terminations :

3

Mounting Type :

Surface Mount

Radiation Hardening :

No

Collector Emitter Breakdown Voltage :

50V

Min Operating Temperature :

-55°C

Time@Peak Reflow Temperature-Max (s) :

40

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Base Part Number :

MUN51**T

Max Operating Temperature :

150°C

Voltage - Rated DC :

-50V