MUN5116T1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Additional Feature :

BUILT-IN BIAS RESISTOR

Resistor - Base (R1) :

4.7 k Ω

Lead Free :

Lead Free

Radiation Hardening :

No

DC Current Gain (hFE) (Min) @ Ic, Vce :

160 @ 5mA 10V

Factory Lead Time :

4 Weeks

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Collector Emitter Breakdown Voltage :

50V

JESD-609 Code :

e3

Pin Count :

3

Current Rating :

-100mA

Transistor Application :

SWITCHING

Pbfree Code :

yes

Published :

2013

Element Configuration :

Single

Continuous Collector Current :

100mA

Vce Saturation (Max) @ Ib, Ic :

250mV @ 1mA, 10mA

Terminal Position :

Dual

Number of Pins :

3

RoHS Status :

ROHS3 Compliant

Surface Mount :

yes

Terminal Form :

Gull wing

HTS Code :

8541.21.00.95

Terminal Finish :

Tin (Sn)

Min Operating Temperature :

-55°C

Polarity :

PNP

Number of Elements :

1

Power Dissipation :

202mW

hFE Min :

160

Current - Collector Cutoff (Max) :

500nA

Peak Reflow Temperature (Cel) :

260

Collector Emitter Voltage (VCEO) :

50V

Base Part Number :

MUN51**T

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Collector Current :

100mA

ECCN Code :

EAR99

Voltage - Rated DC :

-50V

Package / Case :

SC-70, SOT-323

Time@Peak Reflow Temperature-Max (s) :

40

Mounting Type :

Surface Mount

Number of Terminations :

3

Transistor Type :

PNP - Pre-Biased

Max Operating Temperature :

150°C

Packaging :

Tape and Reel (TR)

Halogen Free :

Halogen Free

Max Power Dissipation :

202mW