MUN5115T1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Pin Count :

3

hFE Min :

160

Factory Lead Time :

2 Weeks

Current - Collector Cutoff (Max) :

500nA

Vce Saturation (Max) @ Ib, Ic :

250mV @ 300μA, 10mA

Transistor Application :

SWITCHING

Collector Emitter Breakdown Voltage :

50V

Collector Emitter Voltage (VCEO) :

50V

Current Rating :

-100mA

Lifecycle Status :

ACTIVE (Last Updated: 2 weeks ago)

Terminal Position :

Dual

Peak Reflow Temperature (Cel) :

260

Surface Mount :

yes

Lead Free :

Lead Free

Terminal Form :

Gull wing

RoHS Status :

ROHS3 Compliant

DC Current Gain (hFE) (Min) @ Ic, Vce :

160 @ 5mA 10V

Power Dissipation :

202mW

Max Collector Current :

100mA

Terminal Finish :

Tin (Sn)

Max Power Dissipation :

202mW

Transistor Type :

PNP - Pre-Biased

Max Operating Temperature :

150°C

ECCN Code :

EAR99

Published :

2013

Voltage - Rated DC :

-50V

Number of Elements :

1

Resistor - Base (R1) :

10 k Ω

Base Part Number :

MUN51**T

Continuous Collector Current :

100mA

Polarity :

PNP

JESD-609 Code :

e3

Min Operating Temperature :

-55°C

Mounting Type :

Surface Mount

Additional Feature :

BUILT-IN BIAS RESISTOR

Pbfree Code :

yes

Time@Peak Reflow Temperature-Max (s) :

40

Element Configuration :

Single

Packaging :

Tape and Reel (TR)

Number of Pins :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Radiation Hardening :

No

Halogen Free :

Halogen Free

Package / Case :

SC-70, SOT-323

Number of Terminations :

3