MPSW63G

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Mfr.Part #
MPSW63G
Manufacturer
onsemi
Package / Case
TO-226-3, TO-92-3 Long Body
Datasheet
Download
Description
TRANS PNP DARL 30V 0.5A TO92
Stock
32,064
In Stock :
32,064

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Operating Temperature :
-55°C~150°C TJ
Mounting Type :
Through Hole
Time@Peak Reflow Temperature-Max (s) :
40
JESD-30 Code :
O-PBCY-T3
RoHS Status :
ROHS3 Compliant
Number of Elements :
1
Package / Case :
TO-226-3, TO-92-3 Long Body
Polarity/Channel Type :
PNP
JESD-609 Code :
e1
Surface Mount :
No
Power - Max :
1W
Pin Count :
3
Terminal Finish :
TIN SILVER COPPER
Current - Collector Cutoff (Max) :
100nA ICBO
Terminal Position :
BOTTOM
Pbfree Code :
yes
Packaging :
Bulk
Transistor Type :
PNP - Darlington
Transistor Element Material :
SILICON
Voltage - Collector Emitter Breakdown (Max) :
30V
Vce Saturation (Max) @ Ib, Ic :
1.5V @ 100µA, 100mA
Peak Reflow Temperature (Cel) :
260
Transition Frequency :
125MHz
Frequency - Transition :
125MHz
Current - Collector (Ic) (Max) :
500mA
Number of Terminations :
3
DC Current Gain (hFE) (Min) @ Ic, Vce :
10000 @ 100mA 5V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Qualification Status :
COMMERCIAL
Datasheets
MPSW63G
Introducing Transistors - Bipolar (BJT) - Single onsemi MPSW63G from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Mounting Type:Through Hole, Package / Case:TO-226-3, TO-92-3 Long Body, Number of Terminations:3, MPSW63G pinout, MPSW63G datasheet PDF, MPSW63G amp .Beyond Transistors - Bipolar (BJT) - Single onsemi MPSW63G ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi MPSW63G


PNP - Darlington -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-226-3, TO-92-3 Long Body Bulk Through Hole

MPSW63G Overview


In this device, the DC current gain is 10000 @ 100mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1.5V @ 100μA, 100mA.125MHz is present in the transition frequency.The device exhibits a collector-emitter breakdown at 30V.

MPSW63G Features


the DC current gain for this device is 10000 @ 100mA 5V
the vce saturation(Max) is 1.5V @ 100μA, 100mA
a transition frequency of 125MHz


MPSW63G Applications


There are a lot of Rochester Electronics, LLC
MPSW63G applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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