MPSW01

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Mfr.Part #
MPSW01
Manufacturer
onsemi
Package / Case
TO-226-3, TO-92-3 Long Body
Datasheet
Download
Description
TRANS NPN SS HC 1W 30V TO92
Stock
20,000
In Stock :
20,000

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Published :
2005
DC Current Gain (hFE) (Min) @ Ic, Vce :
60 @ 100mA 1V
Collector Emitter Voltage (VCEO) :
30V
Operating Temperature :
-55°C~150°C TJ
Vce Saturation (Max) @ Ib, Ic :
500mV @ 100mA, 1A
Element Configuration :
Single
Lead Free :
Lead Free
Polarity/Channel Type :
NPN
JESD-609 Code :
e1
hFE Min :
55
Max Collector Current :
1A
Collector Base Voltage (VCBO) :
40V
Width :
25.4mm
Packaging :
Bulk
Current Rating :
1A
Surface Mount :
No
Transistor Element Material :
SILICON
Length :
6.35mm
Number of Elements :
1
Base Part Number :
MPSW01
Transistor Type :
NPN
REACH SVHC :
Unknown
Collector Emitter Breakdown Voltage :
30V
Gain Bandwidth Product :
50MHz
Radiation Hardening :
No
Emitter Base Voltage (VEBO) :
5V
Lifecycle Status :
LAST SHIPMENTS (Last Updated: 1 week ago)
Collector Emitter Saturation Voltage :
500mV
Number of Pins :
3
ECCN Code :
EAR99
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Transition Frequency :
50MHz
Number of Terminations :
3
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Peak Reflow Temperature (Cel) :
260
Height :
6.35mm
Time@Peak Reflow Temperature-Max (s) :
40
Pin Count :
3
RoHS Status :
RoHS Compliant
Frequency :
50MHz
Power Dissipation :
1W
Current - Collector Cutoff (Max) :
100nA ICBO
Pbfree Code :
yes
Voltage - Rated DC :
30V
Weight :
4.535924g
Mounting Type :
Through Hole
Package / Case :
TO-226-3, TO-92-3 Long Body
Max Power Dissipation :
1W
Terminal Position :
BOTTOM
Introducing Transistors - Bipolar (BJT) - Single onsemi MPSW01 from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Base Part Number:MPSW01, Number of Pins:3, Number of Terminations:3, Mounting Type:Through Hole, Package / Case:TO-226-3, TO-92-3 Long Body, MPSW01 pinout, MPSW01 datasheet PDF, MPSW01 amp .Beyond Transistors - Bipolar (BJT) - Single onsemi MPSW01 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi MPSW01


NPN -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 Long Body Bulk Through Hole

MPSW01G Overview


In this device, the DC current gain is 60 @ 100mA 1V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 500mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 100mA, 1A.With the emitter base voltage set at 5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 1A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 50MHz.Single BJT transistor is possible for the collector current to fall as low as 1A volts at Single BJT transistors maximum.

MPSW01G Features


the DC current gain for this device is 60 @ 100mA 1V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 100mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is 1A
a transition frequency of 50MHz


MPSW01G Applications


There are a lot of ON Semiconductor
MPSW01G applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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