MPSW01
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- Mfr.Part #
- MPSW01
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-226-3, TO-92-3 Long Body
- Datasheet
- Download
- Description
- TRANS NPN 30V 1A TO92
- Stock
- 5,472
- In Stock ：
- 5,472
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Pbfree Code :
- yes
- Collector Base Voltage (VCBO) :
- 40V
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Length :
- 6.35mm
- Polarity/Channel Type :
- NPN
- Lead Free :
- Lead Free
- Packaging :
- Bulk
- Published :
- 2005
- ECCN Code :
- EAR99
- Max Collector Current :
- 1A
- Current Rating :
- 1A
- Max Power Dissipation :
- 1W
- Peak Reflow Temperature (Cel) :
- 260
- Frequency :
- 50MHz
- Time@Peak Reflow Temperature-Max (s) :
- 40
- hFE Min :
- 55
- Collector Emitter Saturation Voltage :
- 500mV
- Transistor Type :
- NPN
- Collector Emitter Breakdown Voltage :
- 30V
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 100mA, 1A
- Mounting Type :
- Through Hole
- Voltage - Rated DC :
- 30V
- Number of Pins :
- 3
- Element Configuration :
- Single
- Transition Frequency :
- 50MHz
- Width :
- 25.4mm
- Radiation Hardening :
- No
- Transistor Element Material :
- SILICON
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Position :
- BOTTOM
- Pin Count :
- 3
- Gain Bandwidth Product :
- 50MHz
- Package / Case :
- TO-226-3, TO-92-3 Long Body
- Collector Emitter Voltage (VCEO) :
- 30V
- JESD-609 Code :
- e1
- Emitter Base Voltage (VEBO) :
- 5V
- Number of Elements :
- 1
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- REACH SVHC :
- Unknown
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 1 week ago)
- Weight :
- 4.535924g
- Power Dissipation :
- 1W
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 60 @ 100mA 1V
- Base Part Number :
- MPSW01
- Number of Terminations :
- 3
- Height :
- 6.35mm
- Surface Mount :
- No
- Operating Temperature :
- -55°C~150°C TJ
- RoHS Status :
- RoHS Compliant
- Datasheets
- MPSW01
MPSW01 Documents
NPN -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 Long Body Bulk Through Hole
MPSW01G Overview
In this device, the DC current gain is 60 @ 100mA 1V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 500mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 100mA, 1A.With the emitter base voltage set at 5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 1A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 50MHz.Single BJT transistor is possible for the collector current to fall as low as 1A volts at Single BJT transistors maximum.
MPSW01G Features
the DC current gain for this device is 60 @ 100mA 1V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 100mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is 1A
a transition frequency of 50MHz
MPSW01G Applications
There are a lot of ON Semiconductor
MPSW01G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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