MPSW01ARLRP

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

hFE Min :

55

Max Power Dissipation :

1W

Transition Frequency :

50MHz

JESD-609 Code :

e0

Power Dissipation :

10mW

Element Configuration :

Single

Current - Collector Cutoff (Max) :

100nA ICBO

Qualification Status :

Not Qualified

Terminal Finish :

Tin/Lead (Sn/Pb)

Collector Emitter Breakdown Voltage :

40V

Pin Count :

3

RoHS Status :

Non-RoHS Compliant

Emitter Base Voltage (VEBO) :

5V

DC Current Gain (hFE) (Min) @ Ic, Vce :

60 @ 100mA 1V

Mounting Type :

Through Hole

Terminal Position :

BOTTOM

Polarity/Channel Type :

NPN

Collector Base Voltage (VCBO) :

50V

Operating Temperature :

-55°C~150°C TJ

Vce Saturation (Max) @ Ib, Ic :

500mV @ 100mA, 1A

Gain Bandwidth Product :

50MHz

Reach Compliance Code :

not_compliant

Package / Case :

TO-226-3, TO-92-3 Long Body (Formed Leads)

JESD-30 Code :

O-PBCY-T3

Current Rating :

1A

Published :

2005

Peak Reflow Temperature (Cel) :

240

Transistor Type :

NPN

HTS Code :

8541.29.00.75

Transistor Element Material :

SILICON

Collector Emitter Saturation Voltage :

500mV

Packaging :

Tape and Box (TB)

Base Part Number :

MPSW01A

ECCN Code :

EAR99

Number of Elements :

1

Number of Terminations :

3

Voltage - Rated DC :

40V

Mount :

Through Hole

Lead Free :

Contains Lead

Time@Peak Reflow Temperature-Max (s) :

30

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Collector Emitter Voltage (VCEO) :

500mV

Max Collector Current :

1A