MPSW01ARLRAG
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- Mfr.Part #
- MPSW01ARLRAG
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 Long Body (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 40V 1A TO92
- Stock
- 49,447
- In Stock ：
- 49,447
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Max Collector Current :
- 1A
- Mounting Type :
- Through Hole
- Element Configuration :
- Single
- Published :
- 2005
- Base Part Number :
- MPSW01A
- Collector Emitter Voltage (VCEO) :
- 40V
- hFE Min :
- 55
- Transition Frequency :
- 50MHz
- Number of Pins :
- 3
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Number of Terminations :
- 3
- Collector Emitter Saturation Voltage :
- 500mV
- Packaging :
- Tape and Reel (TR)
- Lead Free :
- Lead Free
- Polarity/Channel Type :
- NPN
- Radiation Hardening :
- No
- RoHS Status :
- RoHS Compliant
- Gain Bandwidth Product :
- 50MHz
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 100mA, 1A
- Transistor Element Material :
- SILICON
- Peak Reflow Temperature (Cel) :
- 260
- Power Dissipation :
- 1W
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 3 days ago)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current Rating :
- 1A
- Voltage - Rated DC :
- 40V
- Operating Temperature :
- -55°C~150°C TJ
- Number of Elements :
- 1
- JESD-609 Code :
- e1
- Max Power Dissipation :
- 1W
- Collector Base Voltage (VCBO) :
- 50V
- Terminal Position :
- BOTTOM
- Pbfree Code :
- yes
- Frequency :
- 50MHz
- ECCN Code :
- EAR99
- Collector Emitter Breakdown Voltage :
- 40V
- Pin Count :
- 3
- Surface Mount :
- No
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Package / Case :
- TO-226-3, TO-92-3 Long Body (Formed Leads)
- Transistor Type :
- NPN
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 60 @ 100mA 1V
- Emitter Base Voltage (VEBO) :
- 5V
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Datasheets
- MPSW01ARLRAG
MPSW01ARLRAG Documents
,TO-226_bentlead.jpg)
NPN -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 Long Body (Formed Leads) Tape & Reel (TR) Through Hole
MPSW01ARLRAG Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 60 @ 100mA 1V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 500mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 500mV @ 100mA, 1A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Its current rating is 1A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 50MHz.During maximum operation, collector current can be as low as 1A volts.
MPSW01ARLRAG Features
the DC current gain for this device is 60 @ 100mA 1V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 100mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is 1A
a transition frequency of 50MHz
MPSW01ARLRAG Applications
There are a lot of ON Semiconductor
MPSW01ARLRAG applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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