MPSW01G
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- Mfr.Part #
- MPSW01G
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 Long Body
- Datasheet
- Download
- Description
- TRANS NPN 30V 1A TO92
- Stock
- 31,788
- In Stock ：
- 31,788
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Height :
- 6.35mm
- Number of Elements :
- 1
- Package / Case :
- TO-226-3, TO-92-3 Long Body
- Pbfree Code :
- yes
- Collector Emitter Saturation Voltage :
- 500mV
- Emitter Base Voltage (VEBO) :
- 5V
- Collector Emitter Voltage (VCEO) :
- 30V
- Frequency :
- 50MHz
- Mounting Type :
- Through Hole
- Polarity/Channel Type :
- NPN
- REACH SVHC :
- Unknown
- Voltage - Rated DC :
- 30V
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 100mA, 1A
- Length :
- 6.35mm
- Number of Pins :
- 3
- Current Rating :
- 1A
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 60 @ 100mA 1V
- JESD-609 Code :
- e1
- Max Collector Current :
- 1A
- Peak Reflow Temperature (Cel) :
- 260
- Packaging :
- Bulk
- Gain Bandwidth Product :
- 50MHz
- ECCN Code :
- EAR99
- hFE Min :
- 55
- Power Dissipation :
- 1W
- Terminal Position :
- BOTTOM
- Transistor Type :
- NPN
- RoHS Status :
- RoHS Compliant
- Collector Emitter Breakdown Voltage :
- 30V
- Max Power Dissipation :
- 1W
- Pin Count :
- 3
- Width :
- 25.4mm
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Element Configuration :
- Single
- Transition Frequency :
- 50MHz
- Weight :
- 4.535924g
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Transistor Element Material :
- SILICON
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 1 week ago)
- Radiation Hardening :
- No
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Collector Base Voltage (VCBO) :
- 40V
- Lead Free :
- Lead Free
- Operating Temperature :
- -55°C~150°C TJ
- Base Part Number :
- MPSW01
- Published :
- 2005
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Terminations :
- 3
- Surface Mount :
- No
- Datasheets
- MPSW01G
,TO-226_bentlead.jpg)
NPN -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 Long Body Bulk Through Hole
MPSW01G Overview
In this device, the DC current gain is 60 @ 100mA 1V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 500mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 100mA, 1A.With the emitter base voltage set at 5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 1A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 50MHz.Single BJT transistor is possible for the collector current to fall as low as 1A volts at Single BJT transistors maximum.
MPSW01G Features
the DC current gain for this device is 60 @ 100mA 1V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 100mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is 1A
a transition frequency of 50MHz
MPSW01G Applications
There are a lot of ON Semiconductor
MPSW01G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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