MPSW05

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Mfr.Part #
MPSW05
Manufacturer
onsemi
Package / Case
TO-226-3, TO-92-3 Long Body
Datasheet
Download
Description
TRANS NPN 60V 0.5A TO92
Stock
15,881
In Stock :
15,881

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Mounting Type :
Through Hole
ECCN Code :
EAR99
HTS Code :
8541.29.00.75
Voltage - Rated DC :
60V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Mount :
Through Hole
Packaging :
Bulk
JEDEC-95 Code :
TO-226AE
Vce Saturation (Max) @ Ib, Ic :
400mV @ 10mA, 250mA
Operating Temperature :
-55°C~150°C TJ
Collector Base Voltage (VCBO) :
60V
Element Configuration :
Single
Number of Elements :
1
Max Collector Current :
500mA
Gain Bandwidth Product :
50MHz
Transistor Type :
NPN
JESD-30 Code :
O-PBCY-T3
Time@Peak Reflow Temperature-Max (s) :
30
Published :
2009
Collector Emitter Voltage (VCEO) :
400mV
Reach Compliance Code :
not_compliant
Transition Frequency :
50MHz
Current - Collector Cutoff (Max) :
500nA
Current Rating :
500mA
Transistor Element Material :
SILICON
Package / Case :
TO-226-3, TO-92-3 Long Body
Max Power Dissipation :
1W
Peak Reflow Temperature (Cel) :
240
Lead Free :
Contains Lead
Transistor Application :
AMPLIFIER
Terminal Position :
BOTTOM
Qualification Status :
Not Qualified
RoHS Status :
Non-RoHS Compliant
Pin Count :
3
JESD-609 Code :
e0
Terminal Finish :
Tin/Lead (Sn/Pb)
hFE Min :
80
Emitter Base Voltage (VEBO) :
4V
Polarity/Channel Type :
NPN
Collector Emitter Breakdown Voltage :
60V
Number of Terminations :
3
DC Current Gain (hFE) (Min) @ Ic, Vce :
60 @ 250mA 1V
Collector Emitter Saturation Voltage :
400mV
Datasheets
MPSW05
Introducing Transistors - Bipolar (BJT) - Single onsemi MPSW05 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Operating Temperature:-55°C~150°C TJ, Package / Case:TO-226-3, TO-92-3 Long Body, Number of Terminations:3, MPSW05 pinout, MPSW05 datasheet PDF, MPSW05 amp .Beyond Transistors - Bipolar (BJT) - Single onsemi MPSW05 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi MPSW05


NPN -55°C~150°C TJ 500nA 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 Long Body Bulk Through Hole

MPSW05 Overview


As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 60 @ 250mA 1V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 400mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 400mV @ 10mA, 250mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 4V.Its current rating is 500mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 50MHz.During maximum operation, collector current can be as low as 500mA volts.

MPSW05 Features


the DC current gain for this device is 60 @ 250mA 1V
a collector emitter saturation voltage of 400mV
the vce saturation(Max) is 400mV @ 10mA, 250mA
the emitter base voltage is kept at 4V
the current rating of this device is 500mA
a transition frequency of 50MHz


MPSW05 Applications


There are a lot of ON Semiconductor
MPSW05 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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