MPSW05
- Mfr.Part #
- MPSW05
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 Long Body
- Datasheet
- Download
- Description
- TRANS NPN 60V 0.5A TO92
- Stock
- 15,881
- In Stock :
- 15,881
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Mounting Type :
- Through Hole
- ECCN Code :
- EAR99
- HTS Code :
- 8541.29.00.75
- Voltage - Rated DC :
- 60V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mount :
- Through Hole
- Packaging :
- Bulk
- JEDEC-95 Code :
- TO-226AE
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 10mA, 250mA
- Operating Temperature :
- -55°C~150°C TJ
- Collector Base Voltage (VCBO) :
- 60V
- Element Configuration :
- Single
- Number of Elements :
- 1
- Max Collector Current :
- 500mA
- Gain Bandwidth Product :
- 50MHz
- Transistor Type :
- NPN
- JESD-30 Code :
- O-PBCY-T3
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Published :
- 2009
- Collector Emitter Voltage (VCEO) :
- 400mV
- Reach Compliance Code :
- not_compliant
- Transition Frequency :
- 50MHz
- Current - Collector Cutoff (Max) :
- 500nA
- Current Rating :
- 500mA
- Transistor Element Material :
- SILICON
- Package / Case :
- TO-226-3, TO-92-3 Long Body
- Max Power Dissipation :
- 1W
- Peak Reflow Temperature (Cel) :
- 240
- Lead Free :
- Contains Lead
- Transistor Application :
- AMPLIFIER
- Terminal Position :
- BOTTOM
- Qualification Status :
- Not Qualified
- RoHS Status :
- Non-RoHS Compliant
- Pin Count :
- 3
- JESD-609 Code :
- e0
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- hFE Min :
- 80
- Emitter Base Voltage (VEBO) :
- 4V
- Polarity/Channel Type :
- NPN
- Collector Emitter Breakdown Voltage :
- 60V
- Number of Terminations :
- 3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 60 @ 250mA 1V
- Collector Emitter Saturation Voltage :
- 400mV
- Datasheets
- MPSW05
,TO-226_bentlead.jpg)
NPN -55°C~150°C TJ 500nA 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 Long Body Bulk Through Hole
MPSW05 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 60 @ 250mA 1V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 400mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 400mV @ 10mA, 250mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 4V.Its current rating is 500mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 50MHz.During maximum operation, collector current can be as low as 500mA volts.
MPSW05 Features
the DC current gain for this device is 60 @ 250mA 1V
a collector emitter saturation voltage of 400mV
the vce saturation(Max) is 400mV @ 10mA, 250mA
the emitter base voltage is kept at 4V
the current rating of this device is 500mA
a transition frequency of 50MHz
MPSW05 Applications
There are a lot of ON Semiconductor
MPSW05 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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