MPSW05
- Mfr.Part #
- MPSW05
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 Long Body
- Datasheet
- Download
- Description
- TRANS NPN 60V 0.5A TO92
- Stock
- 15,881
- In Stock :
- 15,881
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transition Frequency :
- 50MHz
- Mount :
- Through Hole
- ECCN Code :
- EAR99
- Peak Reflow Temperature (Cel) :
- 240
- Gain Bandwidth Product :
- 50MHz
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Packaging :
- Bulk
- Collector Emitter Saturation Voltage :
- 400mV
- Max Power Dissipation :
- 1W
- Reach Compliance Code :
- not_compliant
- Pin Count :
- 3
- Number of Terminations :
- 3
- Transistor Type :
- NPN
- Terminal Position :
- BOTTOM
- Emitter Base Voltage (VEBO) :
- 4V
- Transistor Element Material :
- SILICON
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 60 @ 250mA 1V
- RoHS Status :
- Non-RoHS Compliant
- Element Configuration :
- Single
- Number of Elements :
- 1
- Qualification Status :
- Not Qualified
- hFE Min :
- 80
- Published :
- 2009
- Operating Temperature :
- -55°C~150°C TJ
- Transistor Application :
- AMPLIFIER
- Polarity/Channel Type :
- NPN
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Lead Free :
- Contains Lead
- Max Collector Current :
- 500mA
- JESD-609 Code :
- e0
- Package / Case :
- TO-226-3, TO-92-3 Long Body
- Current - Collector Cutoff (Max) :
- 500nA
- Mounting Type :
- Through Hole
- Current Rating :
- 500mA
- Collector Emitter Voltage (VCEO) :
- 400mV
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 10mA, 250mA
- Collector Base Voltage (VCBO) :
- 60V
- JESD-30 Code :
- O-PBCY-T3
- Voltage - Rated DC :
- 60V
- JEDEC-95 Code :
- TO-226AE
- HTS Code :
- 8541.29.00.75
- Collector Emitter Breakdown Voltage :
- 60V
- Datasheets
- MPSW05
MPSW05 Documents
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NPN -55°C~150°C TJ 500nA 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 Long Body Bulk Through Hole
MPSW05 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 60 @ 250mA 1V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 400mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 400mV @ 10mA, 250mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 4V.Its current rating is 500mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 50MHz.During maximum operation, collector current can be as low as 500mA volts.
MPSW05 Features
the DC current gain for this device is 60 @ 250mA 1V
a collector emitter saturation voltage of 400mV
the vce saturation(Max) is 400mV @ 10mA, 250mA
the emitter base voltage is kept at 4V
the current rating of this device is 500mA
a transition frequency of 50MHz
MPSW05 Applications
There are a lot of ON Semiconductor
MPSW05 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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