MPSW01AG

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

DC Current Gain (hFE) (Min) @ Ic, Vce :

60 @ 100mA 1V

Element Configuration :

Single

Terminal Position :

BOTTOM

Current Rating :

1A

Max Power Dissipation :

1W

Published :

2005

Time@Peak Reflow Temperature-Max (s) :

40

Height :

6.35mm

Gain Bandwidth Product :

50MHz

Transistor Element Material :

SILICON

RoHS Status :

RoHS Compliant

Transition Frequency :

50MHz

Weight :

4.535924g

Number of Terminations :

3

hFE Min :

55

Lead Free :

Lead Free

Peak Reflow Temperature (Cel) :

260

JESD-609 Code :

e1

Package / Case :

TO-226-3, TO-92-3 Long Body

Power Dissipation :

1W

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Transistor Type :

NPN

Collector Emitter Breakdown Voltage :

40V

ECCN Code :

EAR99

Packaging :

Bulk

Length :

6.35mm

Surface Mount :

No

Frequency :

50MHz

Number of Elements :

1

Collector Base Voltage (VCBO) :

50V

Collector Emitter Voltage (VCEO) :

40V

Operating Temperature :

-55°C~150°C TJ

Number of Pins :

3

Pbfree Code :

yes

Vce Saturation (Max) @ Ib, Ic :

500mV @ 100mA, 1A

Lifecycle Status :

LAST SHIPMENTS (Last Updated: 3 days ago)

Polarity/Channel Type :

NPN

REACH SVHC :

Unknown

Voltage - Rated DC :

40V

Radiation Hardening :

No

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Collector Current :

1A

Collector Emitter Saturation Voltage :

500mV

Mounting Type :

Through Hole

Base Part Number :

MPSW01A

Current - Collector Cutoff (Max) :

100nA ICBO

Pin Count :

3

Emitter Base Voltage (VEBO) :

5V

Width :

25.4mm