MPSW01A

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Mfr.Part #
MPSW01A
Manufacturer
onsemi
Package / Case
TO-226-3, TO-92-3 Long Body
Datasheet
Download
Description
TRANS NPN 40V 1A TO92
Stock
3,948
In Stock :
3,948

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Power Dissipation :
1W
Mounting Type :
Through Hole
Number of Pins :
3
Collector Emitter Voltage (VCEO) :
40V
HTS Code :
8541.29.00.75
ECCN Code :
EAR99
Package / Case :
TO-226-3, TO-92-3 Long Body
Transistor Type :
NPN
Qualification Status :
Not Qualified
RoHS Status :
Non-RoHS Compliant
Number of Elements :
1
Max Power Dissipation :
1W
Operating Temperature :
-55°C~150°C TJ
Mount :
Through Hole
Reach Compliance Code :
not_compliant
Number of Terminations :
3
Base Part Number :
MPSW01A
Time@Peak Reflow Temperature-Max (s) :
30
Terminal Finish :
Tin/Lead (Sn/Pb)
Vce Saturation (Max) @ Ib, Ic :
500mV @ 100mA, 1A
Current - Collector Cutoff (Max) :
100nA ICBO
Collector Emitter Breakdown Voltage :
40V
Transition Frequency :
50MHz
Current Rating :
1A
Collector Emitter Saturation Voltage :
500mV
Peak Reflow Temperature (Cel) :
240
Published :
2009
JESD-609 Code :
e0
Lead Free :
Contains Lead
Voltage - Rated DC :
40V
Packaging :
Bulk
Max Collector Current :
1A
hFE Min :
55
Transistor Element Material :
SILICON
Element Configuration :
Single
Emitter Base Voltage (VEBO) :
5V
DC Current Gain (hFE) (Min) @ Ic, Vce :
60 @ 100mA 1V
Gain Bandwidth Product :
50MHz
Collector Base Voltage (VCBO) :
50V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Pin Count :
3
Polarity/Channel Type :
NPN
Terminal Position :
BOTTOM
Introducing Transistors - Bipolar (BJT) - Single onsemi MPSW01A from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Number of Pins:3, Package / Case:TO-226-3, TO-92-3 Long Body, Operating Temperature:-55°C~150°C TJ, Number of Terminations:3, Base Part Number:MPSW01A, MPSW01A pinout, MPSW01A datasheet PDF, MPSW01A amp .Beyond Transistors - Bipolar (BJT) - Single onsemi MPSW01A ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi MPSW01A


NPN -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 Long Body Bulk Through Hole

MPSW01A Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 60 @ 100mA 1V DC current gain.As it features a collector emitter saturation voltage of 500mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 5V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.There is a transition frequency of 50MHz in the part.When collector current reaches its maximum, it can reach 1A volts.

MPSW01A Features


the DC current gain for this device is 60 @ 100mA 1V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 100mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is 1A
a transition frequency of 50MHz


MPSW01A Applications


There are a lot of ON Semiconductor
MPSW01A applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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