MPSW01ARLRA
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- Mfr.Part #
- MPSW01ARLRA
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 Long Body (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 40V 1A TO92
- Stock
- 1,882
- In Stock ：
- 1,882
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Lead Free :
- Contains Lead
- Max Power Dissipation :
- 1W
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Packaging :
- Tape and Reel (TR)
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Published :
- 2005
- Voltage - Rated DC :
- 40V
- Operating Temperature :
- -55°C~150°C TJ
- Reach Compliance Code :
- not_compliant
- Power Dissipation :
- 10mW
- Qualification Status :
- Not Qualified
- Base Part Number :
- MPSW01A
- Mounting Type :
- Through Hole
- Emitter Base Voltage (VEBO) :
- 5V
- Peak Reflow Temperature (Cel) :
- 240
- Current Rating :
- 1A
- Gain Bandwidth Product :
- 50MHz
- JESD-30 Code :
- O-PBCY-T3
- Package / Case :
- TO-226-3, TO-92-3 Long Body (Formed Leads)
- Collector Base Voltage (VCBO) :
- 50V
- Polarity/Channel Type :
- NPN
- Collector Emitter Voltage (VCEO) :
- 500mV
- RoHS Status :
- Non-RoHS Compliant
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Pin Count :
- 3
- Collector Emitter Saturation Voltage :
- 500mV
- Collector Emitter Breakdown Voltage :
- 40V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 60 @ 100mA 1V
- Mount :
- Through Hole
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 100mA, 1A
- Number of Terminations :
- 3
- Number of Elements :
- 1
- Transistor Type :
- NPN
- HTS Code :
- 8541.29.00.75
- hFE Min :
- 55
- Element Configuration :
- Single
- JESD-609 Code :
- e0
- Terminal Position :
- BOTTOM
- Transistor Element Material :
- SILICON
- Max Collector Current :
- 1A
- ECCN Code :
- EAR99
- Transition Frequency :
- 50MHz
- Datasheets
- MPSW01ARLRA
MPSW01ARLRA Documents
,TO-226_bentlead.jpg)
NPN -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 Long Body (Formed Leads) Tape & Reel (TR) Through Hole
MPSW01ARLRA Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 60 @ 100mA 1V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 500mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 500mV @ 100mA, 1A.The emitter base voltage can be kept at 5V for high efficiency.The current rating of this fuse is 1A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 50MHz.Single BJT transistor is possible to have a collector current as low as 1A volts at Single BJT transistors maximum.
MPSW01ARLRA Features
the DC current gain for this device is 60 @ 100mA 1V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 100mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is 1A
a transition frequency of 50MHz
MPSW01ARLRA Applications
There are a lot of ON Semiconductor
MPSW01ARLRA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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