MPSW01ARLRA
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- Mfr.Part #
- MPSW01ARLRA
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 Long Body (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 40V 1A TO92
- Stock
- 1,882
- In Stock ：
- 1,882
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Terminal Position :
- BOTTOM
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 60 @ 100mA 1V
- Base Part Number :
- MPSW01A
- Mount :
- Through Hole
- Peak Reflow Temperature (Cel) :
- 240
- Qualification Status :
- Not Qualified
- Voltage - Rated DC :
- 40V
- Number of Elements :
- 1
- JESD-609 Code :
- e0
- Gain Bandwidth Product :
- 50MHz
- Polarity/Channel Type :
- NPN
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 100mA, 1A
- Transistor Type :
- NPN
- RoHS Status :
- Non-RoHS Compliant
- Current Rating :
- 1A
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Voltage (VCEO) :
- 500mV
- Packaging :
- Tape and Reel (TR)
- Max Collector Current :
- 1A
- Operating Temperature :
- -55°C~150°C TJ
- Power Dissipation :
- 10mW
- Reach Compliance Code :
- not_compliant
- hFE Min :
- 55
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Element Configuration :
- Single
- Collector Emitter Saturation Voltage :
- 500mV
- ECCN Code :
- EAR99
- Number of Terminations :
- 3
- Mounting Type :
- Through Hole
- Package / Case :
- TO-226-3, TO-92-3 Long Body (Formed Leads)
- Collector Base Voltage (VCBO) :
- 50V
- Transistor Element Material :
- SILICON
- HTS Code :
- 8541.29.00.75
- Collector Emitter Breakdown Voltage :
- 40V
- JESD-30 Code :
- O-PBCY-T3
- Published :
- 2005
- Emitter Base Voltage (VEBO) :
- 5V
- Max Power Dissipation :
- 1W
- Lead Free :
- Contains Lead
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Pin Count :
- 3
- Transition Frequency :
- 50MHz
- Datasheets
- MPSW01ARLRA
,TO-226_bentlead.jpg)
NPN -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 Long Body (Formed Leads) Tape & Reel (TR) Through Hole
MPSW01ARLRA Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 60 @ 100mA 1V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 500mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 500mV @ 100mA, 1A.The emitter base voltage can be kept at 5V for high efficiency.The current rating of this fuse is 1A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 50MHz.Single BJT transistor is possible to have a collector current as low as 1A volts at Single BJT transistors maximum.
MPSW01ARLRA Features
the DC current gain for this device is 60 @ 100mA 1V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 100mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is 1A
a transition frequency of 50MHz
MPSW01ARLRA Applications
There are a lot of ON Semiconductor
MPSW01ARLRA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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