MPSW01G
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- Mfr.Part #
- MPSW01G
- Manufacturer
- Sanyo
- Package / Case
- TO-226-3, TO-92-3 Long Body
- Datasheet
- Download
- Description
- TRANS NPN 30V 1A TO92
- Stock
- 33,707
- In Stock ：
- 33,707
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- Manufacturer :
- Sanyo
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Element Configuration :
- Single
- Voltage - Rated DC :
- 30V
- Surface Mount :
- No
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 60 @ 100mA 1V
- Polarity/Channel Type :
- NPN
- Package / Case :
- TO-226-3, TO-92-3 Long Body
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Breakdown Voltage :
- 30V
- Lead Free :
- Lead Free
- Frequency :
- 50MHz
- Emitter Base Voltage (VEBO) :
- 5V
- hFE Min :
- 55
- JESD-609 Code :
- e1
- Transition Frequency :
- 50MHz
- ECCN Code :
- EAR99
- Published :
- 2005
- Max Power Dissipation :
- 1W
- Length :
- 6.35mm
- Number of Elements :
- 1
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Current Rating :
- 1A
- Max Collector Current :
- 1A
- Mounting Type :
- Through Hole
- Terminal Position :
- BOTTOM
- Operating Temperature :
- -55°C~150°C TJ
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- REACH SVHC :
- Unknown
- Transistor Element Material :
- SILICON
- Radiation Hardening :
- No
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 1 week ago)
- Number of Terminations :
- 3
- Base Part Number :
- MPSW01
- Height :
- 6.35mm
- Width :
- 25.4mm
- Number of Pins :
- 3
- Packaging :
- Bulk
- Power Dissipation :
- 1W
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Gain Bandwidth Product :
- 50MHz
- Transistor Type :
- NPN
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 100mA, 1A
- RoHS Status :
- RoHS Compliant
- Collector Emitter Saturation Voltage :
- 500mV
- Collector Base Voltage (VCBO) :
- 40V
- Pin Count :
- 3
- Pbfree Code :
- yes
- Weight :
- 4.535924g
- Collector Emitter Voltage (VCEO) :
- 30V
- Peak Reflow Temperature (Cel) :
- 260
- Datasheets
- MPSW01G
NPN -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 Long Body Bulk Through Hole
MPSW01G Overview
In this device, the DC current gain is 60 @ 100mA 1V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 500mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 100mA, 1A.With the emitter base voltage set at 5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 1A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 50MHz.Single BJT transistor is possible for the collector current to fall as low as 1A volts at Single BJT transistors maximum.
MPSW01G Features
the DC current gain for this device is 60 @ 100mA 1V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 100mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is 1A
a transition frequency of 50MHz
MPSW01G Applications
There are a lot of ON Semiconductor
MPSW01G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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