MPSW01ARLRAG
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- Mfr.Part #
- MPSW01ARLRAG
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 Long Body (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 40V 1A TO92
- Stock
- 49,447
- In Stock ：
- 49,447
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Polarity/Channel Type :
- NPN
- Published :
- 2005
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 100mA, 1A
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Lead Free :
- Lead Free
- Collector Emitter Voltage (VCEO) :
- 40V
- Collector Base Voltage (VCBO) :
- 50V
- RoHS Status :
- RoHS Compliant
- Mounting Type :
- Through Hole
- Operating Temperature :
- -55°C~150°C TJ
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Pin Count :
- 3
- hFE Min :
- 55
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Collector Current :
- 1A
- Terminal Position :
- BOTTOM
- Number of Terminations :
- 3
- Package / Case :
- TO-226-3, TO-92-3 Long Body (Formed Leads)
- Element Configuration :
- Single
- Pbfree Code :
- yes
- Transition Frequency :
- 50MHz
- Surface Mount :
- No
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- ECCN Code :
- EAR99
- Number of Elements :
- 1
- Collector Emitter Saturation Voltage :
- 500mV
- Current Rating :
- 1A
- Gain Bandwidth Product :
- 50MHz
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 60 @ 100mA 1V
- Voltage - Rated DC :
- 40V
- Power Dissipation :
- 1W
- JESD-609 Code :
- e1
- Frequency :
- 50MHz
- Peak Reflow Temperature (Cel) :
- 260
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 3 days ago)
- Collector Emitter Breakdown Voltage :
- 40V
- Radiation Hardening :
- No
- Base Part Number :
- MPSW01A
- Max Power Dissipation :
- 1W
- Transistor Element Material :
- SILICON
- Emitter Base Voltage (VEBO) :
- 5V
- Number of Pins :
- 3
- Packaging :
- Tape and Reel (TR)
- Transistor Type :
- NPN
- Datasheets
- MPSW01ARLRAG
,TO-226_bentlead.jpg)
NPN -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 Long Body (Formed Leads) Tape & Reel (TR) Through Hole
MPSW01ARLRAG Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 60 @ 100mA 1V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 500mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 500mV @ 100mA, 1A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Its current rating is 1A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 50MHz.During maximum operation, collector current can be as low as 1A volts.
MPSW01ARLRAG Features
the DC current gain for this device is 60 @ 100mA 1V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 100mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is 1A
a transition frequency of 50MHz
MPSW01ARLRAG Applications
There are a lot of ON Semiconductor
MPSW01ARLRAG applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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