MPSW01
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- Mfr.Part #
- MPSW01
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 Long Body
- Datasheet
- Download
- Description
- TRANS NPN SS HC 1W 30V TO92
- Stock
- 20,000
- In Stock ：
- 20,000
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 100mA, 1A
- Packaging :
- Bulk
- Published :
- 2005
- Mounting Type :
- Through Hole
- Number of Pins :
- 3
- Package / Case :
- TO-226-3, TO-92-3 Long Body
- Polarity/Channel Type :
- NPN
- hFE Min :
- 55
- Voltage - Rated DC :
- 30V
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 1 week ago)
- Collector Emitter Saturation Voltage :
- 500mV
- JESD-609 Code :
- e1
- Pin Count :
- 3
- Collector Emitter Breakdown Voltage :
- 30V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Emitter Base Voltage (VEBO) :
- 5V
- Base Part Number :
- MPSW01
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Number of Terminations :
- 3
- Transistor Element Material :
- SILICON
- Pbfree Code :
- yes
- Element Configuration :
- Single
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Width :
- 25.4mm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Position :
- BOTTOM
- Weight :
- 4.535924g
- Height :
- 6.35mm
- REACH SVHC :
- Unknown
- Operating Temperature :
- -55°C~150°C TJ
- Length :
- 6.35mm
- ECCN Code :
- EAR99
- RoHS Status :
- RoHS Compliant
- Transition Frequency :
- 50MHz
- Number of Elements :
- 1
- Frequency :
- 50MHz
- Collector Emitter Voltage (VCEO) :
- 30V
- Power Dissipation :
- 1W
- Max Power Dissipation :
- 1W
- Gain Bandwidth Product :
- 50MHz
- Lead Free :
- Lead Free
- Current Rating :
- 1A
- Max Collector Current :
- 1A
- Transistor Type :
- NPN
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 60 @ 100mA 1V
- Radiation Hardening :
- No
- Surface Mount :
- No
- Collector Base Voltage (VCBO) :
- 40V
- Peak Reflow Temperature (Cel) :
- 260
- Datasheets
- MPSW01
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NPN -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 Long Body Bulk Through Hole
MPSW01G Overview
In this device, the DC current gain is 60 @ 100mA 1V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 500mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 100mA, 1A.With the emitter base voltage set at 5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 1A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 50MHz.Single BJT transistor is possible for the collector current to fall as low as 1A volts at Single BJT transistors maximum.
MPSW01G Features
the DC current gain for this device is 60 @ 100mA 1V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 100mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is 1A
a transition frequency of 50MHz
MPSW01G Applications
There are a lot of ON Semiconductor
MPSW01G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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| MPSW01 | onsemi | 5,472 | TRANS NPN 30V 1A TO92 |
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| MPSW01AG | onsemi | 7,151 | TRANS NPN 40V 1A TO92 |
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| MPSW01ARLRP | onsemi | 20,889 | TRANS NPN 40V 1A TO92 |
| MPSW01ARLRPG | onsemi | 27,015 | TRANS NPN 40V 1A TO92 |
| MPSW01G | onsemi | 33,707 | TRANS NPN 30V 1A TO92 |
| MPSW01G | onsemi | 31,788 | TRANS NPN 30V 1A TO92 |
| MPSW05 | onsemi | 15,881 | TRANS NPN 60V 0.5A TO92 |
| MPSW05G | onsemi | 26,428 | TRANS NPN 60V 0.5A TO92 |
| MPSW06 | onsemi | 182 | TRANS NPN 80V 0.5A TO92-3 |
| MPSW06 | onsemi | 182 | TRANS NPN 80V 0.5A TO92 |
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