MPSW05

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Mfr.Part #
MPSW05
Manufacturer
onsemi
Package / Case
TO-226-3, TO-92-3 Long Body
Datasheet
Download
Description
TRANS NPN 60V 0.5A TO92
Stock
15,881
In Stock :
15,881

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Mounting Type :
Through Hole
Transistor Element Material :
SILICON
Max Collector Current :
500mA
Pin Count :
3
Qualification Status :
Not Qualified
JESD-30 Code :
O-PBCY-T3
Mount :
Through Hole
Collector Emitter Saturation Voltage :
400mV
hFE Min :
80
Transistor Type :
NPN
Polarity/Channel Type :
NPN
Number of Terminations :
3
Gain Bandwidth Product :
50MHz
Terminal Finish :
Tin/Lead (Sn/Pb)
Time@Peak Reflow Temperature-Max (s) :
30
JESD-609 Code :
e0
Peak Reflow Temperature (Cel) :
240
Package / Case :
TO-226-3, TO-92-3 Long Body
Transition Frequency :
50MHz
Current - Collector Cutoff (Max) :
500nA
Collector Emitter Breakdown Voltage :
60V
Voltage - Rated DC :
60V
JEDEC-95 Code :
TO-226AE
Vce Saturation (Max) @ Ib, Ic :
400mV @ 10mA, 250mA
RoHS Status :
Non-RoHS Compliant
Reach Compliance Code :
not_compliant
ECCN Code :
EAR99
Current Rating :
500mA
Collector Emitter Voltage (VCEO) :
400mV
Operating Temperature :
-55°C~150°C TJ
Element Configuration :
Single
Collector Base Voltage (VCBO) :
60V
Emitter Base Voltage (VEBO) :
4V
Max Power Dissipation :
1W
Transistor Application :
AMPLIFIER
Published :
2009
HTS Code :
8541.29.00.75
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Number of Elements :
1
DC Current Gain (hFE) (Min) @ Ic, Vce :
60 @ 250mA 1V
Terminal Position :
BOTTOM
Lead Free :
Contains Lead
Packaging :
Bulk
Datasheets
MPSW05
Introducing Transistors - Bipolar (BJT) - Single onsemi MPSW05 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Number of Terminations:3, Package / Case:TO-226-3, TO-92-3 Long Body, Operating Temperature:-55°C~150°C TJ, MPSW05 pinout, MPSW05 datasheet PDF, MPSW05 amp .Beyond Transistors - Bipolar (BJT) - Single onsemi MPSW05 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi MPSW05


NPN -55°C~150°C TJ 500nA 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 Long Body Bulk Through Hole

MPSW05 Overview


As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 60 @ 250mA 1V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 400mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 400mV @ 10mA, 250mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 4V.Its current rating is 500mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 50MHz.During maximum operation, collector current can be as low as 500mA volts.

MPSW05 Features


the DC current gain for this device is 60 @ 250mA 1V
a collector emitter saturation voltage of 400mV
the vce saturation(Max) is 400mV @ 10mA, 250mA
the emitter base voltage is kept at 4V
the current rating of this device is 500mA
a transition frequency of 50MHz


MPSW05 Applications


There are a lot of ON Semiconductor
MPSW05 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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