MPSW05
- Mfr.Part #
- MPSW05
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 Long Body
- Datasheet
- Download
- Description
- TRANS NPN 60V 0.5A TO92
- Stock
- 15,881
- In Stock :
- 15,881
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Mounting Type :
- Through Hole
- Transistor Element Material :
- SILICON
- Max Collector Current :
- 500mA
- Pin Count :
- 3
- Qualification Status :
- Not Qualified
- JESD-30 Code :
- O-PBCY-T3
- Mount :
- Through Hole
- Collector Emitter Saturation Voltage :
- 400mV
- hFE Min :
- 80
- Transistor Type :
- NPN
- Polarity/Channel Type :
- NPN
- Number of Terminations :
- 3
- Gain Bandwidth Product :
- 50MHz
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Time@Peak Reflow Temperature-Max (s) :
- 30
- JESD-609 Code :
- e0
- Peak Reflow Temperature (Cel) :
- 240
- Package / Case :
- TO-226-3, TO-92-3 Long Body
- Transition Frequency :
- 50MHz
- Current - Collector Cutoff (Max) :
- 500nA
- Collector Emitter Breakdown Voltage :
- 60V
- Voltage - Rated DC :
- 60V
- JEDEC-95 Code :
- TO-226AE
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 10mA, 250mA
- RoHS Status :
- Non-RoHS Compliant
- Reach Compliance Code :
- not_compliant
- ECCN Code :
- EAR99
- Current Rating :
- 500mA
- Collector Emitter Voltage (VCEO) :
- 400mV
- Operating Temperature :
- -55°C~150°C TJ
- Element Configuration :
- Single
- Collector Base Voltage (VCBO) :
- 60V
- Emitter Base Voltage (VEBO) :
- 4V
- Max Power Dissipation :
- 1W
- Transistor Application :
- AMPLIFIER
- Published :
- 2009
- HTS Code :
- 8541.29.00.75
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Elements :
- 1
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 60 @ 250mA 1V
- Terminal Position :
- BOTTOM
- Lead Free :
- Contains Lead
- Packaging :
- Bulk
- Datasheets
- MPSW05
,TO-226_bentlead.jpg)
NPN -55°C~150°C TJ 500nA 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 Long Body Bulk Through Hole
MPSW05 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 60 @ 250mA 1V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 400mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 400mV @ 10mA, 250mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 4V.Its current rating is 500mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 50MHz.During maximum operation, collector current can be as low as 500mA volts.
MPSW05 Features
the DC current gain for this device is 60 @ 250mA 1V
a collector emitter saturation voltage of 400mV
the vce saturation(Max) is 400mV @ 10mA, 250mA
the emitter base voltage is kept at 4V
the current rating of this device is 500mA
a transition frequency of 50MHz
MPSW05 Applications
There are a lot of ON Semiconductor
MPSW05 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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