MPSW01
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- Mfr.Part #
- MPSW01
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-226-3, TO-92-3 Long Body
- Datasheet
- Download
- Description
- TRANS NPN 30V 1A TO92
- Stock
- 5,472
- In Stock ：
- 5,472
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Pins :
- 3
- Height :
- 6.35mm
- REACH SVHC :
- Unknown
- Mounting Type :
- Through Hole
- Length :
- 6.35mm
- Terminal Position :
- BOTTOM
- Operating Temperature :
- -55°C~150°C TJ
- Max Power Dissipation :
- 1W
- Transistor Type :
- NPN
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- JESD-609 Code :
- e1
- Width :
- 25.4mm
- ECCN Code :
- EAR99
- Power Dissipation :
- 1W
- Collector Emitter Voltage (VCEO) :
- 30V
- Element Configuration :
- Single
- Packaging :
- Bulk
- RoHS Status :
- RoHS Compliant
- Emitter Base Voltage (VEBO) :
- 5V
- Surface Mount :
- No
- Collector Emitter Breakdown Voltage :
- 30V
- Published :
- 2005
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 60 @ 100mA 1V
- Number of Terminations :
- 3
- Frequency :
- 50MHz
- Number of Elements :
- 1
- Lead Free :
- Lead Free
- Voltage - Rated DC :
- 30V
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 1 week ago)
- Collector Base Voltage (VCBO) :
- 40V
- Pbfree Code :
- yes
- Radiation Hardening :
- No
- Pin Count :
- 3
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 100mA, 1A
- Polarity/Channel Type :
- NPN
- Transition Frequency :
- 50MHz
- Package / Case :
- TO-226-3, TO-92-3 Long Body
- Current Rating :
- 1A
- Transistor Element Material :
- SILICON
- hFE Min :
- 55
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Weight :
- 4.535924g
- Max Collector Current :
- 1A
- Base Part Number :
- MPSW01
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Collector Emitter Saturation Voltage :
- 500mV
- Peak Reflow Temperature (Cel) :
- 260
- Gain Bandwidth Product :
- 50MHz
- Datasheets
- MPSW01
NPN -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 Long Body Bulk Through Hole
MPSW01G Overview
In this device, the DC current gain is 60 @ 100mA 1V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 500mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 100mA, 1A.With the emitter base voltage set at 5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 1A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 50MHz.Single BJT transistor is possible for the collector current to fall as low as 1A volts at Single BJT transistors maximum.
MPSW01G Features
the DC current gain for this device is 60 @ 100mA 1V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 100mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is 1A
a transition frequency of 50MHz
MPSW01G Applications
There are a lot of ON Semiconductor
MPSW01G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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