MPSW05G

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Mfr.Part #
MPSW05G
Manufacturer
onsemi
Package / Case
TO-226-3, TO-92-3 Long Body
Datasheet
Download
Description
TRANS NPN 60V 0.5A TO92
Stock
26,428
In Stock :
26,428

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Configuration :
Single
Polarity/Channel Type :
NPN
Vce Saturation (Max) @ Ib, Ic :
400mV @ 10mA, 250mA
Current - Collector (Ic) (Max) :
500mA
JESD-609 Code :
e1
Surface Mount :
No
Package / Case :
TO-226-3, TO-92-3 Long Body
Packaging :
Bulk
Qualification Status :
COMMERCIAL
Transistor Application :
AMPLIFIER
Transistor Element Material :
SILICON
Operating Temperature :
-55°C~150°C TJ
Number of Terminations :
3
Pbfree Code :
yes
DC Current Gain (hFE) (Min) @ Ic, Vce :
60 @ 250mA 1V
Voltage - Collector Emitter Breakdown (Max) :
60V
Terminal Position :
BOTTOM
Peak Reflow Temperature (Cel) :
260
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Time@Peak Reflow Temperature-Max (s) :
40
Pin Count :
3
Transistor Type :
NPN
Power - Max :
1W
JESD-30 Code :
O-PBCY-T3
Number of Elements :
1
RoHS Status :
ROHS3 Compliant
Frequency - Transition :
50MHz
Mounting Type :
Through Hole
Current - Collector Cutoff (Max) :
500nA
Transition Frequency :
50MHz
Terminal Finish :
TIN SILVER COPPER
Datasheets
MPSW05G
Introducing Transistors - Bipolar (BJT) - Single onsemi MPSW05G from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-226-3, TO-92-3 Long Body, Operating Temperature:-55°C~150°C TJ, Number of Terminations:3, Mounting Type:Through Hole, MPSW05G pinout, MPSW05G datasheet PDF, MPSW05G amp .Beyond Transistors - Bipolar (BJT) - Single onsemi MPSW05G ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi MPSW05G


NPN -55°C~150°C TJ 500nA 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 Long Body Bulk Through Hole

MPSW05G Overview


The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 60 @ 250mA 1V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 400mV @ 10mA, 250mA.A transition frequency of 50MHz is present in the part.A 60V maximal voltage - Collector Emitter Breakdown is present in the device.

MPSW05G Features


the DC current gain for this device is 60 @ 250mA 1V
the vce saturation(Max) is 400mV @ 10mA, 250mA
a transition frequency of 50MHz


MPSW05G Applications


There are a lot of Rochester Electronics, LLC
MPSW05G applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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