MPSW01G
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- Mfr.Part #
- MPSW01G
- Manufacturer
- Sanyo
- Package / Case
- TO-226-3, TO-92-3 Long Body
- Datasheet
- Download
- Description
- TRANS NPN 30V 1A TO92
- Stock
- 33,707
- In Stock ：
- 33,707
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- Manufacturer :
- Sanyo
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Elements :
- 1
- JESD-609 Code :
- e1
- Transistor Element Material :
- SILICON
- REACH SVHC :
- Unknown
- Collector Emitter Voltage (VCEO) :
- 30V
- Packaging :
- Bulk
- Width :
- 25.4mm
- Collector Emitter Saturation Voltage :
- 500mV
- RoHS Status :
- RoHS Compliant
- Number of Terminations :
- 3
- Weight :
- 4.535924g
- Pin Count :
- 3
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Emitter Base Voltage (VEBO) :
- 5V
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 1 week ago)
- Length :
- 6.35mm
- Element Configuration :
- Single
- Collector Base Voltage (VCBO) :
- 40V
- Peak Reflow Temperature (Cel) :
- 260
- Package / Case :
- TO-226-3, TO-92-3 Long Body
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 100mA, 1A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Polarity/Channel Type :
- NPN
- Operating Temperature :
- -55°C~150°C TJ
- Surface Mount :
- No
- Lead Free :
- Lead Free
- Collector Emitter Breakdown Voltage :
- 30V
- Max Collector Current :
- 1A
- Terminal Position :
- BOTTOM
- Published :
- 2005
- Voltage - Rated DC :
- 30V
- Gain Bandwidth Product :
- 50MHz
- Time@Peak Reflow Temperature-Max (s) :
- 40
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 60 @ 100mA 1V
- Transition Frequency :
- 50MHz
- Transistor Type :
- NPN
- Frequency :
- 50MHz
- Radiation Hardening :
- No
- Number of Pins :
- 3
- Height :
- 6.35mm
- Mounting Type :
- Through Hole
- Base Part Number :
- MPSW01
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- hFE Min :
- 55
- ECCN Code :
- EAR99
- Max Power Dissipation :
- 1W
- Power Dissipation :
- 1W
- Pbfree Code :
- yes
- Current Rating :
- 1A
- Datasheets
- MPSW01G
NPN -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 Long Body Bulk Through Hole
MPSW01G Overview
In this device, the DC current gain is 60 @ 100mA 1V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 500mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 100mA, 1A.With the emitter base voltage set at 5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 1A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 50MHz.Single BJT transistor is possible for the collector current to fall as low as 1A volts at Single BJT transistors maximum.
MPSW01G Features
the DC current gain for this device is 60 @ 100mA 1V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 100mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is 1A
a transition frequency of 50MHz
MPSW01G Applications
There are a lot of ON Semiconductor
MPSW01G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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