MPSW63
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- Mfr.Part #
- MPSW63
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 Long Body
- Datasheet
- Download
- Description
- TRANS PNP DARL 30V 0.5A TO92
- Stock
- 46,140
- In Stock ：
- 46,140
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Elements :
- 1
- Max Power Dissipation :
- 1W
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 100µA, 100mA
- Collector Base Voltage (VCBO) :
- 30V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 10000 @ 100mA 5V
- Power Dissipation :
- 1W
- Terminal Position :
- BOTTOM
- Max Collector Current :
- 500mA
- Operating Temperature :
- -55°C~150°C TJ
- Packaging :
- Bulk
- Pin Count :
- 3
- Transition Frequency :
- 125MHz
- Lead Free :
- Contains Lead
- Transistor Type :
- PNP - Darlington
- Lifecycle Status :
- OBSOLETE (Last Updated: 1 week ago)
- Collector Emitter Breakdown Voltage :
- 30V
- Current Rating :
- -500mA
- Continuous Collector Current :
- -500mA
- Mounting Type :
- Through Hole
- Collector Emitter Voltage (VCEO) :
- 30V
- Collector Emitter Saturation Voltage :
- 1.5V
- Emitter Base Voltage (VEBO) :
- 10V
- Transistor Element Material :
- SILICON
- Package / Case :
- TO-226-3, TO-92-3 Long Body
- Element Configuration :
- Single
- Number of Pins :
- 3
- Base Part Number :
- MPSW63
- Voltage - Rated DC :
- -30V
- Number of Terminations :
- 3
- Frequency - Transition :
- 125MHz
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Published :
- 2006
- Reach Compliance Code :
- not_compliant
- Peak Reflow Temperature (Cel) :
- 240
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Qualification Status :
- Not Qualified
- Mount :
- Through Hole
- RoHS Status :
- Non-RoHS Compliant
- Pbfree Code :
- No
- JESD-609 Code :
- e0
- Polarity :
- PNP
- Datasheets
- MPSW63
,TO-226_bentlead.jpg)
PNP - Darlington -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON TO-226-3, TO-92-3 Long Body Bulk Through Hole
MPSW63 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 10000 @ 100mA 5V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 1.5V, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1.5V @ 100μA, 100mA.Continuous collector voltages of -500mA should be maintained to achieve high efficiency.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 10V.Its current rating is -500mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 125MHz.During maximum operation, collector current can be as low as 500mA volts.
MPSW63 Features
the DC current gain for this device is 10000 @ 100mA 5V
a collector emitter saturation voltage of 1.5V
the vce saturation(Max) is 1.5V @ 100μA, 100mA
the emitter base voltage is kept at 10V
the current rating of this device is -500mA
a transition frequency of 125MHz
MPSW63 Applications
There are a lot of ON Semiconductor
MPSW63 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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