MPSW56RLRP
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- Mfr.Part #
- MPSW56RLRP
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 Long Body (Formed Leads)
- Datasheet
- Download
- Description
- TRANS PNP GP BIPO 1W 80V TO-92
- Stock
- 1,073
- In Stock ：
- 1,073
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Max Collector Current :
- 500mA
- Width :
- 25.4mm
- Gain Bandwidth Product :
- 50MHz
- RoHS Status :
- RoHS Compliant
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 10mA, 250mA
- Package / Case :
- TO-226-3, TO-92-3 Long Body (Formed Leads)
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 1 week ago)
- Transistor Application :
- AMPLIFIER
- Mounting Type :
- Through Hole
- Voltage - Rated DC :
- -80V
- Lead Free :
- Lead Free
- Operating Temperature :
- -55°C~150°C TJ
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 50 @ 250mA 1V
- Collector Base Voltage (VCBO) :
- 80V
- Transition Frequency :
- 50MHz
- ECCN Code :
- EAR99
- Max Breakdown Voltage :
- 60V
- Base Part Number :
- MPSW56
- Transistor Type :
- PNP
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Collector Cutoff (Max) :
- 500nA
- hFE Min :
- 100
- Packaging :
- Tape and Box (TB)
- Max Power Dissipation :
- 1W
- Number of Elements :
- 1
- Emitter Base Voltage (VEBO) :
- 4V
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Published :
- 2006
- Element Configuration :
- Single
- Transistor Element Material :
- SILICON
- Pbfree Code :
- yes
- Current Rating :
- -500mA
- Collector Emitter Breakdown Voltage :
- 80V
- Height :
- 6.35mm
- Pin Count :
- 3
- Weight :
- 4.535924g
- Radiation Hardening :
- No
- Frequency :
- 50MHz
- Polarity/Channel Type :
- PNP
- Power Dissipation :
- 1W
- Peak Reflow Temperature (Cel) :
- 260
- JESD-609 Code :
- e1
- Collector Emitter Saturation Voltage :
- -500mV
- Number of Terminations :
- 3
- Terminal Position :
- BOTTOM
- Length :
- 6.35mm
- Collector Emitter Voltage (VCEO) :
- 80V
- Surface Mount :
- No
- Number of Pins :
- 3
- Datasheets
- MPSW56RLRP
,TO-226_bentlead.jpg)
PNP -55°C~150°C TJ 500nA 1 Elements 3 Terminations SILICON PNP TO-226-3, TO-92-3 Long Body (Formed Leads) Tape & Box (TB) Through Hole
MPSW56RLRPG Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 50 @ 250mA 1V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of -500mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 500mV @ 10mA, 250mA.The emitter base voltage can be kept at 4V for high efficiency.The current rating of this fuse is -500mA, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 50MHz.The breakdown input voltage is 60V volts.Single BJT transistor is possible to have a collector current as low as 500mA volts at Single BJT transistors maximum.
MPSW56RLRPG Features
the DC current gain for this device is 50 @ 250mA 1V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 10mA, 250mA
the emitter base voltage is kept at 4V
the current rating of this device is -500mA
a transition frequency of 50MHz
MPSW56RLRPG Applications
There are a lot of ON Semiconductor
MPSW56RLRPG applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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