MPSW55RLRA
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- Mfr.Part #
- MPSW55RLRA
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 Long Body (Formed Leads)
- Datasheet
- Download
- Description
- TRANS PNP 60V 0.5A TO92
- Stock
- 15,004
- In Stock ：
- 15,004
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Breakdown Voltage :
- 60V
- Current - Collector (Ic) (Max) :
- 500mA
- Reach Compliance Code :
- not_compliant
- Current Rating :
- -500mA
- Terminal Position :
- BOTTOM
- Transition Frequency :
- 50MHz
- Emitter Base Voltage (VEBO) :
- 4V
- Mount :
- Through Hole
- Max Power Dissipation :
- 1W
- Collector Emitter Voltage (VCEO) :
- 500mV
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Voltage - Rated DC :
- -60V
- HTS Code :
- 8541.29.00.75
- Max Operating Temperature :
- 150°C
- Number of Elements :
- 1
- Mounting Type :
- Through Hole
- Collector Base Voltage (VCBO) :
- -60V
- Gain Bandwidth Product :
- 50MHz
- RoHS Status :
- Non-RoHS Compliant
- Pin Count :
- 3
- Published :
- 2009
- JESD-609 Code :
- e0
- Time@Peak Reflow Temperature-Max (s) :
- 30
- JESD-30 Code :
- O-PBCY-T3
- Polarity/Channel Type :
- PNP
- ECCN Code :
- EAR99
- Peak Reflow Temperature (Cel) :
- 240
- Max Collector Current :
- 500mA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 50 @ 250mA 1V
- Number of Terminations :
- 3
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Package / Case :
- TO-226-3, TO-92-3 Long Body (Formed Leads)
- Collector Emitter Saturation Voltage :
- -500mV
- Qualification Status :
- Not Qualified
- Transistor Application :
- AMPLIFIER
- Lead Free :
- Contains Lead
- Current - Collector Cutoff (Max) :
- 500nA
- Base Part Number :
- MPSW55
- Transistor Type :
- PNP
- Min Operating Temperature :
- -55°C
- Packaging :
- Tape and Reel (TR)
- hFE Min :
- 100
- Element Configuration :
- Single
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 10mA, 250mA
- Datasheets
- MPSW55RLRA
,TO-226_bentlead.jpg)
PNP 500nA 1 Elements 3 Terminations PNP TO-226-3, TO-92-3 Long Body (Formed Leads) Tape & Reel (TR) Through Hole
MPSW55RLRA Overview
In this device, the DC current gain is 50 @ 250mA 1V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of -500mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 10mA, 250mA.With the emitter base voltage set at 4V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -500mA for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 50MHz.Single BJT transistor is possible for the collector current to fall as low as 500mA volts at Single BJT transistors maximum.
MPSW55RLRA Features
the DC current gain for this device is 50 @ 250mA 1V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 10mA, 250mA
the emitter base voltage is kept at 4V
the current rating of this device is -500mA
a transition frequency of 50MHz
MPSW55RLRA Applications
There are a lot of ON Semiconductor
MPSW55RLRA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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