MPSW55

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Mfr.Part #
MPSW55
Manufacturer
onsemi
Package / Case
TO-226-3, TO-92-3 Long Body
Datasheet
Download
Description
TRANS PNP 60V 0.5A TO92
Stock
3,332
In Stock :
3,332

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Time@Peak Reflow Temperature-Max (s) :
30
Transition Frequency :
50MHz
Polarity/Channel Type :
PNP
Package / Case :
TO-226-3, TO-92-3 Long Body
JESD-30 Code :
O-PBCY-T3
Emitter Base Voltage (VEBO) :
4V
ECCN Code :
EAR99
Base Part Number :
MPSW55
Max Collector Current :
500mA
Mount :
Through Hole
Collector Emitter Voltage (VCEO) :
500mV
Reach Compliance Code :
not_compliant
DC Current Gain (hFE) (Min) @ Ic, Vce :
50 @ 250mA 1V
Max Power Dissipation :
1W
Pin Count :
3
Number of Elements :
1
hFE Min :
100
Packaging :
Bulk
Transistor Application :
AMPLIFIER
Voltage - Rated DC :
-60V
Current - Collector Cutoff (Max) :
500nA
Element Configuration :
Single
HTS Code :
8541.29.00.75
Vce Saturation (Max) @ Ib, Ic :
500mV @ 10mA, 250mA
Terminal Finish :
Tin/Lead (Sn/Pb)
Collector Base Voltage (VCBO) :
-60V
Transistor Type :
PNP
Peak Reflow Temperature (Cel) :
240
Collector Emitter Breakdown Voltage :
60V
Terminal Position :
BOTTOM
Published :
2009
Number of Terminations :
3
Collector Emitter Saturation Voltage :
-500mV
Transistor Element Material :
SILICON
Current - Collector (Ic) (Max) :
500mA
Gain Bandwidth Product :
50MHz
JESD-609 Code :
e0
Current Rating :
-500mA
Operating Temperature :
-55°C~150°C TJ
Qualification Status :
Not Qualified
RoHS Status :
Non-RoHS Compliant
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Lead Free :
Contains Lead
Mounting Type :
Through Hole
Datasheets
MPSW55
Introducing Transistors - Bipolar (BJT) - Single onsemi MPSW55 from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-226-3, TO-92-3 Long Body, Base Part Number:MPSW55, Number of Terminations:3, Operating Temperature:-55°C~150°C TJ, Mounting Type:Through Hole, MPSW55 pinout, MPSW55 datasheet PDF, MPSW55 amp .Beyond Transistors - Bipolar (BJT) - Single onsemi MPSW55 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi MPSW55


PNP -55°C~150°C TJ 500nA 1 Elements 3 Terminations SILICON PNP TO-226-3, TO-92-3 Long Body Bulk Through Hole

MPSW55 Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 50 @ 250mA 1V DC current gain.As it features a collector emitter saturation voltage of -500mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 4V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.There is a transition frequency of 50MHz in the part.When collector current reaches its maximum, it can reach 500mA volts.

MPSW55 Features


the DC current gain for this device is 50 @ 250mA 1V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 10mA, 250mA
the emitter base voltage is kept at 4V
the current rating of this device is -500mA
a transition frequency of 50MHz


MPSW55 Applications


There are a lot of ON Semiconductor
MPSW55 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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