MPSW55

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Current Rating :

-500mA

Collector Emitter Breakdown Voltage :

60V

Time@Peak Reflow Temperature-Max (s) :

30

Lead Free :

Contains Lead

Mounting Type :

Through Hole

Emitter Base Voltage (VEBO) :

4V

Transistor Type :

PNP

Voltage - Rated DC :

-60V

Current - Collector (Ic) (Max) :

500mA

Element Configuration :

Single

JESD-609 Code :

e0

Operating Temperature :

-55°C~150°C TJ

Reach Compliance Code :

not_compliant

Terminal Finish :

Tin/Lead (Sn/Pb)

Vce Saturation (Max) @ Ib, Ic :

500mV @ 10mA, 250mA

Number of Elements :

1

JESD-30 Code :

O-PBCY-T3

Mount :

Through Hole

Published :

2009

Collector Emitter Saturation Voltage :

-500mV

Collector Base Voltage (VCBO) :

-60V

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

HTS Code :

8541.29.00.75

Transistor Application :

AMPLIFIER

DC Current Gain (hFE) (Min) @ Ic, Vce :

50 @ 250mA 1V

Collector Emitter Voltage (VCEO) :

500mV

Package / Case :

TO-226-3, TO-92-3 Long Body

Max Collector Current :

500mA

RoHS Status :

Non-RoHS Compliant

Packaging :

Bulk

Base Part Number :

MPSW55

Terminal Position :

BOTTOM

Number of Terminations :

3

Current - Collector Cutoff (Max) :

500nA

Polarity/Channel Type :

PNP

Gain Bandwidth Product :

50MHz

Transistor Element Material :

SILICON

hFE Min :

100

Transition Frequency :

50MHz

Pin Count :

3

Qualification Status :

Not Qualified

Peak Reflow Temperature (Cel) :

240

Max Power Dissipation :

1W