MPSW55
- Mfr.Part #
- MPSW55
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 Long Body
- Datasheet
- Download
- Description
- TRANS PNP 60V 0.5A TO92
- Stock
- 3,332
- In Stock :
- 3,332
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Transition Frequency :
- 50MHz
- Polarity/Channel Type :
- PNP
- Package / Case :
- TO-226-3, TO-92-3 Long Body
- JESD-30 Code :
- O-PBCY-T3
- Emitter Base Voltage (VEBO) :
- 4V
- ECCN Code :
- EAR99
- Base Part Number :
- MPSW55
- Max Collector Current :
- 500mA
- Mount :
- Through Hole
- Collector Emitter Voltage (VCEO) :
- 500mV
- Reach Compliance Code :
- not_compliant
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 50 @ 250mA 1V
- Max Power Dissipation :
- 1W
- Pin Count :
- 3
- Number of Elements :
- 1
- hFE Min :
- 100
- Packaging :
- Bulk
- Transistor Application :
- AMPLIFIER
- Voltage - Rated DC :
- -60V
- Current - Collector Cutoff (Max) :
- 500nA
- Element Configuration :
- Single
- HTS Code :
- 8541.29.00.75
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 10mA, 250mA
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Collector Base Voltage (VCBO) :
- -60V
- Transistor Type :
- PNP
- Peak Reflow Temperature (Cel) :
- 240
- Collector Emitter Breakdown Voltage :
- 60V
- Terminal Position :
- BOTTOM
- Published :
- 2009
- Number of Terminations :
- 3
- Collector Emitter Saturation Voltage :
- -500mV
- Transistor Element Material :
- SILICON
- Current - Collector (Ic) (Max) :
- 500mA
- Gain Bandwidth Product :
- 50MHz
- JESD-609 Code :
- e0
- Current Rating :
- -500mA
- Operating Temperature :
- -55°C~150°C TJ
- Qualification Status :
- Not Qualified
- RoHS Status :
- Non-RoHS Compliant
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Lead Free :
- Contains Lead
- Mounting Type :
- Through Hole
- Datasheets
- MPSW55
,TO-226_bentlead.jpg)
PNP -55°C~150°C TJ 500nA 1 Elements 3 Terminations SILICON PNP TO-226-3, TO-92-3 Long Body Bulk Through Hole
MPSW55 Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 50 @ 250mA 1V DC current gain.As it features a collector emitter saturation voltage of -500mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 4V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.There is a transition frequency of 50MHz in the part.When collector current reaches its maximum, it can reach 500mA volts.
MPSW55 Features
the DC current gain for this device is 50 @ 250mA 1V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 10mA, 250mA
the emitter base voltage is kept at 4V
the current rating of this device is -500mA
a transition frequency of 50MHz
MPSW55 Applications
There are a lot of ON Semiconductor
MPSW55 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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