MPSW51G
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- Mfr.Part #
- MPSW51G
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 Long Body
- Datasheet
- Download
- Description
- TRANS PNP 30V 1A TO92
- Stock
- 46,175
- In Stock ：
- 46,175
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Packaging :
- Bulk
- Transistor Type :
- PNP
- Mounting Type :
- Through Hole
- Power - Max :
- 1W
- Vce Saturation (Max) @ Ib, Ic :
- 700mV @ 100mA, 1A
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 60 @ 100mA 1V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- RoHS Status :
- ROHS3 Compliant
- Current - Collector (Ic) (Max) :
- 1A
- Frequency - Transition :
- 50MHz
- Package / Case :
- TO-226-3, TO-92-3 Long Body
- Operating Temperature :
- -55°C~150°C TJ
- Voltage - Collector Emitter Breakdown (Max) :
- 30V
- Supplier Device Package :
- TO-92 (TO-226)
- Datasheets
- MPSW51G
,TO-226_bentlead.jpg)
PNP -55°C~150°C TJ 100nA ICBO TO-226-3, TO-92-3 Long Body Bulk Through Hole
MPSW51G Overview
DC current gain in this device equals 60 @ 100mA 1V, which is the ratio of the base current to the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 700mV @ 100mA, 1A.Product comes in TO-92 (TO-226) supplier package.A negative maximal voltage - Collector Emitter Breakdown can be observed in the device.
MPSW51G Features
the DC current gain for this device is 60 @ 100mA 1V
the vce saturation(Max) is 700mV @ 100mA, 1A
the supplier device package of TO-92 (TO-226)
MPSW51G Applications
There are a lot of Rochester Electronics, LLC
MPSW51G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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