MPSW51AG
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- Mfr.Part #
- MPSW51AG
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 Long Body
- Datasheet
- Download
- Description
- TRANS PNP 40V 1A TO92
- Stock
- 21,829
- In Stock ：
- 21,829
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transition Frequency :
- 50MHz
- Collector Emitter Breakdown Voltage :
- 40V
- JESD-609 Code :
- e1
- RoHS Status :
- RoHS Compliant
- Power Dissipation :
- 1W
- Emitter Base Voltage (VEBO) :
- 5V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Position :
- BOTTOM
- Pbfree Code :
- yes
- Max Power Dissipation :
- 1W
- Gain Bandwidth Product :
- 50MHz
- Packaging :
- Bulk
- Frequency :
- 50MHz
- Transistor Element Material :
- SILICON
- REACH SVHC :
- Unknown
- Surface Mount :
- No
- hFE Min :
- 55
- Number of Pins :
- 3
- Published :
- 2006
- Base Part Number :
- MPSW51A
- Element Configuration :
- Single
- Transistor Type :
- PNP
- Peak Reflow Temperature (Cel) :
- 260
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 60 @ 100mA 1V
- Pin Count :
- 3
- ECCN Code :
- EAR99
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Operating Temperature :
- -55°C~150°C TJ
- Voltage - Rated DC :
- -40V
- Package / Case :
- TO-226-3, TO-92-3 Long Body
- Polarity/Channel Type :
- PNP
- Lead Free :
- Lead Free
- Current Rating :
- -1A
- Width :
- 4.191mm
- Max Collector Current :
- 1A
- Weight :
- 4.535924g
- Radiation Hardening :
- No
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 1 week ago)
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Collector Emitter Saturation Voltage :
- -700mV
- Collector Base Voltage (VCBO) :
- 50V
- Number of Terminations :
- 3
- Vce Saturation (Max) @ Ib, Ic :
- 700mV @ 100mA, 1A
- Length :
- 5.207mm
- Collector Emitter Voltage (VCEO) :
- 40V
- Height :
- 7.874mm
- Mounting Type :
- Through Hole
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Number of Elements :
- 1
- Datasheets
- MPSW51AG
,TO-226_bentlead.jpg)
PNP -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-226-3, TO-92-3 Long Body Bulk Through Hole
MPSW51AG Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 60 @ 100mA 1V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of -700mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 700mV @ 100mA, 1A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Its current rating is -1A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 50MHz.During maximum operation, collector current can be as low as 1A volts.
MPSW51AG Features
the DC current gain for this device is 60 @ 100mA 1V
a collector emitter saturation voltage of -700mV
the vce saturation(Max) is 700mV @ 100mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is -1A
a transition frequency of 50MHz
MPSW51AG Applications
There are a lot of ON Semiconductor
MPSW51AG applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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