MPSW51A

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Mfr.Part #
MPSW51A
Manufacturer
onsemi
Package / Case
TO-226-3, TO-92-3 Long Body
Datasheet
Download
Description
TRANS PNP 40V 1A TO92
Stock
24,443
In Stock :
24,443

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
RoHS Status :
Non-RoHS Compliant
Element Configuration :
Single
Terminal Finish :
Tin/Lead (Sn/Pb)
Voltage - Rated DC :
-40V
Polarity/Channel Type :
PNP
Peak Reflow Temperature (Cel) :
240
ECCN Code :
EAR99
DC Current Gain (hFE) (Min) @ Ic, Vce :
60 @ 100mA 1V
Packaging :
Bulk
Transistor Type :
PNP
Max Power Dissipation :
1W
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Reach Compliance Code :
not_compliant
Collector Emitter Voltage (VCEO) :
700mV
Collector Base Voltage (VCBO) :
-50V
Current - Collector (Ic) (Max) :
1A
Collector Emitter Breakdown Voltage :
40V
JESD-30 Code :
O-PBCY-T3
Vce Saturation (Max) @ Ib, Ic :
700mV @ 100mA, 1A
Current - Collector Cutoff (Max) :
100nA ICBO
Package / Case :
TO-226-3, TO-92-3 Long Body
Max Collector Current :
1A
Mount :
Through Hole
Lead Free :
Contains Lead
Pin Count :
3
Transition Frequency :
50MHz
Current Rating :
-1A
JESD-609 Code :
e0
Terminal Position :
BOTTOM
Emitter Base Voltage (VEBO) :
5V
Published :
2009
Collector Emitter Saturation Voltage :
-700mV
hFE Min :
55
Power Dissipation :
1W
HTS Code :
8541.29.00.75
Number of Elements :
1
Base Part Number :
MPSW51A
Time@Peak Reflow Temperature-Max (s) :
30
Transistor Element Material :
SILICON
Operating Temperature :
-55°C~150°C TJ
Number of Terminations :
3
Gain Bandwidth Product :
50MHz
Mounting Type :
Through Hole
Qualification Status :
Not Qualified
Datasheets
MPSW51A
Introducing Transistors - Bipolar (BJT) - Single onsemi MPSW51A from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-226-3, TO-92-3 Long Body, Base Part Number:MPSW51A, Operating Temperature:-55°C~150°C TJ, Number of Terminations:3, Mounting Type:Through Hole, MPSW51A pinout, MPSW51A datasheet PDF, MPSW51A amp .Beyond Transistors - Bipolar (BJT) - Single onsemi MPSW51A ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi MPSW51A


PNP -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-226-3, TO-92-3 Long Body Bulk Through Hole

MPSW51A Overview


This device has a DC current gain of 60 @ 100mA 1V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of -700mV allows maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at 5V to achieve high efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is -1A.In this part, there is a transition frequency of 50MHz.The maximum collector current is 1A volts.

MPSW51A Features


the DC current gain for this device is 60 @ 100mA 1V
a collector emitter saturation voltage of -700mV
the vce saturation(Max) is 700mV @ 100mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is -1A
a transition frequency of 50MHz


MPSW51A Applications


There are a lot of ON Semiconductor
MPSW51A applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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