MPSW45RLREG
- Mfr.Part #
- MPSW45RLREG
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 Long Body (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN DARL 40V 1A TO92
- Stock
- 4,122
- In Stock :
- 4,122
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Type :
- NPN - Darlington
- Base Part Number :
- MPSW45
- Collector Emitter Voltage (VCEO) :
- 1.5V
- Packaging :
- Tape and Reel (TR)
- Published :
- 2010
- Pin Count :
- 3
- Mounting Type :
- Through Hole
- Polarity :
- NPN
- RoHS Status :
- RoHS Compliant
- Number of Pins :
- 3
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- JESD-609 Code :
- e1
- Max Power Dissipation :
- 1W
- Package / Case :
- TO-226-3, TO-92-3 Long Body (Formed Leads)
- Emitter Base Voltage (VEBO) :
- 12V
- Pbfree Code :
- yes
- Collector Emitter Breakdown Voltage :
- 40V
- Peak Reflow Temperature (Cel) :
- 260
- Operating Temperature :
- -55°C~150°C TJ
- Qualification Status :
- Not Qualified
- Frequency - Transition :
- 100MHz
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 2mA, 1A
- Power Dissipation :
- 1W
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Lead Free :
- Lead Free
- Surface Mount :
- No
- Collector Base Voltage (VCBO) :
- 50V
- Voltage - Rated DC :
- 40V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 25000 @ 200mA 5V
- Number of Terminations :
- 3
- Number of Elements :
- 1
- Current Rating :
- 1A
- Element Configuration :
- Single
- HTS Code :
- 8541.29.00.75
- hFE Min :
- 25000
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Transistor Element Material :
- SILICON
- Transition Frequency :
- 100MHz
- Max Collector Current :
- 1A
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 4 days ago)
- Continuous Collector Current :
- 1A
- Terminal Position :
- BOTTOM
- Datasheets
- MPSW45RLREG
MPSW45RLREG Documents
,TO-226_bentlead.jpg)
NPN - Darlington -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON TO-226-3, TO-92-3 Long Body (Formed Leads) Tape & Reel (TR) Through Hole
MPSW45RLREG Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 25000 @ 200mA 5V.When VCE saturation is 1.5V @ 2mA, 1A, transistor means Ic has reached transistors maximum value (saturated).Continuous collector voltage should be kept at 1A for high efficiency.Emitter base voltages of 12V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 1A.In the part, the transition frequency is 100MHz.A maximum collector current of 1A volts can be achieved.
MPSW45RLREG Features
the DC current gain for this device is 25000 @ 200mA 5V
the vce saturation(Max) is 1.5V @ 2mA, 1A
the emitter base voltage is kept at 12V
the current rating of this device is 1A
a transition frequency of 100MHz
MPSW45RLREG Applications
There are a lot of ON Semiconductor
MPSW45RLREG applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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