MPSW45RLREG
- Mfr.Part #
- MPSW45RLREG
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 Long Body (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN DARL 40V 1A TO92
- Stock
- 4,122
- In Stock :
- 4,122
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Frequency - Transition :
- 100MHz
- Continuous Collector Current :
- 1A
- Element Configuration :
- Single
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Transistor Type :
- NPN - Darlington
- Current Rating :
- 1A
- Collector Base Voltage (VCBO) :
- 50V
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 2mA, 1A
- HTS Code :
- 8541.29.00.75
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 25000 @ 200mA 5V
- Max Collector Current :
- 1A
- Mounting Type :
- Through Hole
- Base Part Number :
- MPSW45
- JESD-609 Code :
- e1
- Collector Emitter Voltage (VCEO) :
- 1.5V
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 4 days ago)
- Transistor Element Material :
- SILICON
- RoHS Status :
- RoHS Compliant
- Polarity :
- NPN
- Pbfree Code :
- yes
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Position :
- BOTTOM
- Qualification Status :
- Not Qualified
- Peak Reflow Temperature (Cel) :
- 260
- Surface Mount :
- No
- Operating Temperature :
- -55°C~150°C TJ
- hFE Min :
- 25000
- Emitter Base Voltage (VEBO) :
- 12V
- Number of Pins :
- 3
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Package / Case :
- TO-226-3, TO-92-3 Long Body (Formed Leads)
- Power Dissipation :
- 1W
- Transition Frequency :
- 100MHz
- Pin Count :
- 3
- Packaging :
- Tape and Reel (TR)
- Number of Elements :
- 1
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Lead Free :
- Lead Free
- Max Power Dissipation :
- 1W
- Collector Emitter Breakdown Voltage :
- 40V
- Voltage - Rated DC :
- 40V
- Number of Terminations :
- 3
- Published :
- 2010
- Datasheets
- MPSW45RLREG
,TO-226_bentlead.jpg)
NPN - Darlington -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON TO-226-3, TO-92-3 Long Body (Formed Leads) Tape & Reel (TR) Through Hole
MPSW45RLREG Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 25000 @ 200mA 5V.When VCE saturation is 1.5V @ 2mA, 1A, transistor means Ic has reached transistors maximum value (saturated).Continuous collector voltage should be kept at 1A for high efficiency.Emitter base voltages of 12V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 1A.In the part, the transition frequency is 100MHz.A maximum collector current of 1A volts can be achieved.
MPSW45RLREG Features
the DC current gain for this device is 25000 @ 200mA 5V
the vce saturation(Max) is 1.5V @ 2mA, 1A
the emitter base voltage is kept at 12V
the current rating of this device is 1A
a transition frequency of 100MHz
MPSW45RLREG Applications
There are a lot of ON Semiconductor
MPSW45RLREG applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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