MPSW45G

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Mfr.Part #
MPSW45G
Manufacturer
onsemi
Package / Case
TO-226-3, TO-92-3 Long Body
Datasheet
Download
Description
TRANS NPN DARL 40V 1A TO92
Stock
46,147
In Stock :
46,147

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Collector Base Voltage (VCBO) :
50V
Element Configuration :
Single
Transistor Element Material :
SILICON
Package / Case :
TO-226-3, TO-92-3 Long Body
Time@Peak Reflow Temperature-Max (s) :
40
Vce Saturation (Max) @ Ib, Ic :
1.5V @ 2mA, 1A
Current Rating :
1A
Max Collector Current :
1A
Voltage - Rated DC :
40V
Power Dissipation :
1W
Emitter Base Voltage (VEBO) :
12V
Transition Frequency :
100MHz
Number of Pins :
3
Collector Emitter Saturation Voltage :
1.5V
Base Part Number :
MPSW45
Polarity :
NPN
JESD-609 Code :
e1
Peak Reflow Temperature (Cel) :
260
Continuous Collector Current :
1A
Published :
2010
Operating Temperature :
-55°C~150°C TJ
DC Current Gain (hFE) (Min) @ Ic, Vce :
25000 @ 200mA 5V
Transistor Type :
NPN - Darlington
Pin Count :
3
Number of Elements :
1
Collector Emitter Breakdown Voltage :
40V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Lifecycle Status :
LAST SHIPMENTS (Last Updated: 1 week ago)
Collector Emitter Voltage (VCEO) :
40V
Terminal Position :
BOTTOM
Surface Mount :
No
Pbfree Code :
yes
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Current - Collector Cutoff (Max) :
100nA ICBO
Max Power Dissipation :
1W
Lead Free :
Lead Free
Mounting Type :
Through Hole
Frequency - Transition :
100MHz
Packaging :
Bulk
Number of Terminations :
3
RoHS Status :
RoHS Compliant
Radiation Hardening :
No
Datasheets
MPSW45G
Introducing Transistors - Bipolar (BJT) - Single onsemi MPSW45G from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-226-3, TO-92-3 Long Body, Number of Pins:3, Base Part Number:MPSW45, Operating Temperature:-55°C~150°C TJ, Mounting Type:Through Hole, Number of Terminations:3, MPSW45G pinout, MPSW45G datasheet PDF, MPSW45G amp .Beyond Transistors - Bipolar (BJT) - Single onsemi MPSW45G ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi MPSW45G


NPN - Darlington -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON TO-226-3, TO-92-3 Long Body Bulk Through Hole

MPSW45G Overview


This device has a DC current gain of 25000 @ 200mA 5V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of 1.5V allows maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).A constant collector voltage of 1A is necessary for high efficiency.The base voltage of the emitter can be kept at 12V to achieve high efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is 1A.In this part, there is a transition frequency of 100MHz.The maximum collector current is 1A volts.

MPSW45G Features


the DC current gain for this device is 25000 @ 200mA 5V
a collector emitter saturation voltage of 1.5V
the vce saturation(Max) is 1.5V @ 2mA, 1A
the emitter base voltage is kept at 12V
the current rating of this device is 1A
a transition frequency of 100MHz


MPSW45G Applications


There are a lot of ON Semiconductor
MPSW45G applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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