MPSW45A
- Mfr.Part #
- MPSW45A
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 Long Body
- Datasheet
- Download
- Description
- TRANS NPN DARL 50V 1A TO92
- Stock
- 48,061
- In Stock :
- 48,061
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Type :
- NPN - Darlington
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Pins :
- 3
- ECCN Code :
- EAR99
- Qualification Status :
- Not Qualified
- Current Rating :
- 1A
- Peak Reflow Temperature (Cel) :
- 240
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 1 week ago)
- Operating Temperature :
- -55°C~150°C TJ
- Transistor Element Material :
- SILICON
- Package / Case :
- TO-226-3, TO-92-3 Long Body
- Voltage - Rated DC :
- 50V
- Lead Free :
- Contains Lead
- Pbfree Code :
- No
- Polarity :
- NPN
- Base Part Number :
- MPSW45A
- Surface Mount :
- No
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 2mA, 1A
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Max Collector Current :
- 1A
- Mounting Type :
- Through Hole
- Collector Emitter Breakdown Voltage :
- 50V
- Packaging :
- Bulk
- Pin Count :
- 3
- Published :
- 2009
- Power Dissipation :
- 1W
- JESD-609 Code :
- e0
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 25000 @ 200mA 5V
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Transistor Application :
- AMPLIFIER
- Transition Frequency :
- 100MHz
- Collector Base Voltage (VCBO) :
- 60V
- Element Configuration :
- Single
- Number of Elements :
- 1
- Frequency - Transition :
- 100MHz
- Emitter Base Voltage (VEBO) :
- 12V
- Number of Terminations :
- 3
- RoHS Status :
- Non-RoHS Compliant
- Terminal Position :
- BOTTOM
- Continuous Collector Current :
- 1A
- Reach Compliance Code :
- not_compliant
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Collector Emitter Voltage (VCEO) :
- 1.5V
- HTS Code :
- 8541.29.00.75
- Max Power Dissipation :
- 1W
- Datasheets
- MPSW45A
MPSW45A Documents
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NPN - Darlington -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON TO-226-3, TO-92-3 Long Body Bulk Through Hole
MPSW45A Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 25000 @ 200mA 5V DC current gain.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.For high efficiency, the continuous collector voltage must be kept at 1A.Keeping the emitter base voltage at 12V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.There is a transition frequency of 100MHz in the part.When collector current reaches its maximum, it can reach 1A volts.
MPSW45A Features
the DC current gain for this device is 25000 @ 200mA 5V
the vce saturation(Max) is 1.5V @ 2mA, 1A
the emitter base voltage is kept at 12V
the current rating of this device is 1A
a transition frequency of 100MHz
MPSW45A Applications
There are a lot of ON Semiconductor
MPSW45A applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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