MPSW42RLRAG

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Mfr.Part #
MPSW42RLRAG
Manufacturer
onsemi
Package / Case
TO-226-3, TO-92-3 Long Body (Formed Leads)
Datasheet
Download
Description
TRANS NPN 300V 0.5A TO92
Stock
17,149
In Stock :
17,149

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Operating Temperature :
-55°C~150°C TJ
Radiation Hardening :
No
Frequency :
50MHz
Width :
12.7mm
Transition Frequency :
50MHz
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
JESD-609 Code :
e1
Number of Pins :
3
Vce Saturation (Max) @ Ib, Ic :
500mV @ 2mA, 20mA
Max Collector Current :
500mA
Collector Emitter Saturation Voltage :
500mV
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Current - Collector Cutoff (Max) :
100nA ICBO
Package / Case :
TO-226-3, TO-92-3 Long Body (Formed Leads)
Polarity/Channel Type :
NPN
Lifecycle Status :
LAST SHIPMENTS (Last Updated: 1 day ago)
Power Dissipation :
1W
Surface Mount :
No
Collector Emitter Voltage (VCEO) :
300V
Voltage - Rated DC :
300V
Weight :
4.535924g
Terminal Position :
BOTTOM
Number of Elements :
1
DC Current Gain (hFE) (Min) @ Ic, Vce :
40 @ 30mA 10V
Max Breakdown Voltage :
300V
RoHS Status :
RoHS Compliant
Emitter Base Voltage (VEBO) :
6V
REACH SVHC :
Unknown
Packaging :
Cut Tape (CT)
Transistor Element Material :
SILICON
Height :
6.35mm
Lead Free :
Lead Free
Number of Terminations :
3
Peak Reflow Temperature (Cel) :
260
Pin Count :
3
Pbfree Code :
yes
Element Configuration :
Single
Base Part Number :
MPSW42
Collector Emitter Breakdown Voltage :
300V
Time@Peak Reflow Temperature-Max (s) :
40
ECCN Code :
EAR99
Length :
6.35mm
Published :
2006
Current Rating :
500mA
Gain Bandwidth Product :
50MHz
Transistor Application :
SWITCHING
Collector Base Voltage (VCBO) :
300V
hFE Min :
25
Transistor Type :
NPN
Max Power Dissipation :
1W
Mounting Type :
Through Hole
Datasheets
MPSW42RLRAG
Introducing Transistors - Bipolar (BJT) - Single onsemi MPSW42RLRAG from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Number of Pins:3, Package / Case:TO-226-3, TO-92-3 Long Body (Formed Leads), Number of Terminations:3, Base Part Number:MPSW42, Mounting Type:Through Hole, MPSW42RLRAG pinout, MPSW42RLRAG datasheet PDF, MPSW42RLRAG amp .Beyond Transistors - Bipolar (BJT) - Single onsemi MPSW42RLRAG ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi MPSW42RLRAG


NPN -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 Long Body (Formed Leads) Cut Tape (CT) Through Hole

MPSW42RLRAG Overview


In this device, the DC current gain is 40 @ 30mA 10V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 500mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 2mA, 20mA.With the emitter base voltage set at 6V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 500mA for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 50MHz.Input voltage breakdown is available at 300V volts.Single BJT transistor is possible for the collector current to fall as low as 500mA volts at Single BJT transistors maximum.

MPSW42RLRAG Features


the DC current gain for this device is 40 @ 30mA 10V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 2mA, 20mA
the emitter base voltage is kept at 6V
the current rating of this device is 500mA
a transition frequency of 50MHz


MPSW42RLRAG Applications


There are a lot of ON Semiconductor
MPSW42RLRAG applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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