MPSW42RLRAG
- Mfr.Part #
- MPSW42RLRAG
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 Long Body (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 300V 0.5A TO92
- Stock
- 17,149
- In Stock :
- 17,149
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Operating Temperature :
- -55°C~150°C TJ
- Radiation Hardening :
- No
- Frequency :
- 50MHz
- Width :
- 12.7mm
- Transition Frequency :
- 50MHz
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- JESD-609 Code :
- e1
- Number of Pins :
- 3
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 2mA, 20mA
- Max Collector Current :
- 500mA
- Collector Emitter Saturation Voltage :
- 500mV
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Package / Case :
- TO-226-3, TO-92-3 Long Body (Formed Leads)
- Polarity/Channel Type :
- NPN
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 1 day ago)
- Power Dissipation :
- 1W
- Surface Mount :
- No
- Collector Emitter Voltage (VCEO) :
- 300V
- Voltage - Rated DC :
- 300V
- Weight :
- 4.535924g
- Terminal Position :
- BOTTOM
- Number of Elements :
- 1
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 30mA 10V
- Max Breakdown Voltage :
- 300V
- RoHS Status :
- RoHS Compliant
- Emitter Base Voltage (VEBO) :
- 6V
- REACH SVHC :
- Unknown
- Packaging :
- Cut Tape (CT)
- Transistor Element Material :
- SILICON
- Height :
- 6.35mm
- Lead Free :
- Lead Free
- Number of Terminations :
- 3
- Peak Reflow Temperature (Cel) :
- 260
- Pin Count :
- 3
- Pbfree Code :
- yes
- Element Configuration :
- Single
- Base Part Number :
- MPSW42
- Collector Emitter Breakdown Voltage :
- 300V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- ECCN Code :
- EAR99
- Length :
- 6.35mm
- Published :
- 2006
- Current Rating :
- 500mA
- Gain Bandwidth Product :
- 50MHz
- Transistor Application :
- SWITCHING
- Collector Base Voltage (VCBO) :
- 300V
- hFE Min :
- 25
- Transistor Type :
- NPN
- Max Power Dissipation :
- 1W
- Mounting Type :
- Through Hole
- Datasheets
- MPSW42RLRAG
,TO-226_bentlead.jpg)
NPN -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 Long Body (Formed Leads) Cut Tape (CT) Through Hole
MPSW42RLRAG Overview
In this device, the DC current gain is 40 @ 30mA 10V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 500mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 2mA, 20mA.With the emitter base voltage set at 6V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 500mA for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 50MHz.Input voltage breakdown is available at 300V volts.Single BJT transistor is possible for the collector current to fall as low as 500mA volts at Single BJT transistors maximum.
MPSW42RLRAG Features
the DC current gain for this device is 40 @ 30mA 10V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 2mA, 20mA
the emitter base voltage is kept at 6V
the current rating of this device is 500mA
a transition frequency of 50MHz
MPSW42RLRAG Applications
There are a lot of ON Semiconductor
MPSW42RLRAG applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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