MPSW13RLRA

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Mfr.Part #
MPSW13RLRA
Manufacturer
onsemi
Package / Case
TO-226-3, TO-92-3 Long Body (Formed Leads)
Datasheet
Download
Description
TRANS NPN DARL 30V 1A TO92
Stock
2,124
In Stock :
2,124

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Lead Free :
Contains Lead
Transistor Element Material :
SILICON
Current Rating :
1A
Packaging :
Tape and Reel (TR)
Qualification Status :
Not Qualified
Number of Terminations :
3
Number of Elements :
1
HTS Code :
8541.29.00.75
Collector Base Voltage (VCBO) :
30V
Mount :
Through Hole
Package / Case :
TO-226-3, TO-92-3 Long Body (Formed Leads)
Reach Compliance Code :
not_compliant
Element Configuration :
Single
Current - Collector Cutoff (Max) :
100nA ICBO
Mounting Type :
Through Hole
Collector Emitter Breakdown Voltage :
30V
Voltage - Rated DC :
30V
Time@Peak Reflow Temperature-Max (s) :
30
Transition Frequency :
125MHz
DC Current Gain (hFE) (Min) @ Ic, Vce :
10000 @ 100mA 5V
Frequency - Transition :
125MHz
Operating Temperature :
-55°C~150°C TJ
RoHS Status :
Non-RoHS Compliant
Continuous Collector Current :
1A
Vce Saturation (Max) @ Ib, Ic :
1.5V @ 100µA, 100mA
Max Collector Current :
1A
Polarity :
NPN
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Published :
2006
Peak Reflow Temperature (Cel) :
240
Terminal Finish :
Tin/Lead (Sn/Pb)
Emitter Base Voltage (VEBO) :
10V
Collector Emitter Voltage (VCEO) :
1.5V
Terminal Position :
BOTTOM
Power Dissipation :
1W
Max Power Dissipation :
1W
Pin Count :
3
Number of Pins :
3
JESD-609 Code :
e0
Transistor Type :
NPN - Darlington
Datasheets
MPSW13RLRA
Introducing Transistors - Bipolar (BJT) - Single onsemi MPSW13RLRA from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Package / Case:TO-226-3, TO-92-3 Long Body (Formed Leads), Mounting Type:Through Hole, Operating Temperature:-55°C~150°C TJ, Number of Pins:3, MPSW13RLRA pinout, MPSW13RLRA datasheet PDF, MPSW13RLRA amp .Beyond Transistors - Bipolar (BJT) - Single onsemi MPSW13RLRA ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi MPSW13RLRA


NPN - Darlington -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON TO-226-3, TO-92-3 Long Body (Formed Leads) Tape & Reel (TR) Through Hole

MPSW13RLRA Overview


In this device, the DC current gain is 10000 @ 100mA 5V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1.5V @ 100μA, 100mA.A 1A continuous collector voltage is necessary to achieve high efficiency.With the emitter base voltage set at 10V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 1A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 125MHz.Single BJT transistor is possible for the collector current to fall as low as 1A volts at Single BJT transistors maximum.

MPSW13RLRA Features


the DC current gain for this device is 10000 @ 100mA 5V
the vce saturation(Max) is 1.5V @ 100μA, 100mA
the emitter base voltage is kept at 10V
the current rating of this device is 1A
a transition frequency of 125MHz


MPSW13RLRA Applications


There are a lot of ON Semiconductor
MPSW13RLRA applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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