MPSW13RLRA
- Mfr.Part #
- MPSW13RLRA
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 Long Body (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN DARL 30V 1A TO92
- Stock
- 2,124
- In Stock :
- 2,124
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Lead Free :
- Contains Lead
- Transistor Element Material :
- SILICON
- Current Rating :
- 1A
- Packaging :
- Tape and Reel (TR)
- Qualification Status :
- Not Qualified
- Number of Terminations :
- 3
- Number of Elements :
- 1
- HTS Code :
- 8541.29.00.75
- Collector Base Voltage (VCBO) :
- 30V
- Mount :
- Through Hole
- Package / Case :
- TO-226-3, TO-92-3 Long Body (Formed Leads)
- Reach Compliance Code :
- not_compliant
- Element Configuration :
- Single
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Mounting Type :
- Through Hole
- Collector Emitter Breakdown Voltage :
- 30V
- Voltage - Rated DC :
- 30V
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Transition Frequency :
- 125MHz
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 10000 @ 100mA 5V
- Frequency - Transition :
- 125MHz
- Operating Temperature :
- -55°C~150°C TJ
- RoHS Status :
- Non-RoHS Compliant
- Continuous Collector Current :
- 1A
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 100µA, 100mA
- Max Collector Current :
- 1A
- Polarity :
- NPN
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Published :
- 2006
- Peak Reflow Temperature (Cel) :
- 240
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Emitter Base Voltage (VEBO) :
- 10V
- Collector Emitter Voltage (VCEO) :
- 1.5V
- Terminal Position :
- BOTTOM
- Power Dissipation :
- 1W
- Max Power Dissipation :
- 1W
- Pin Count :
- 3
- Number of Pins :
- 3
- JESD-609 Code :
- e0
- Transistor Type :
- NPN - Darlington
- Datasheets
- MPSW13RLRA
,TO-226_bentlead.jpg)
NPN - Darlington -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON TO-226-3, TO-92-3 Long Body (Formed Leads) Tape & Reel (TR) Through Hole
MPSW13RLRA Overview
In this device, the DC current gain is 10000 @ 100mA 5V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1.5V @ 100μA, 100mA.A 1A continuous collector voltage is necessary to achieve high efficiency.With the emitter base voltage set at 10V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 1A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 125MHz.Single BJT transistor is possible for the collector current to fall as low as 1A volts at Single BJT transistors maximum.
MPSW13RLRA Features
the DC current gain for this device is 10000 @ 100mA 5V
the vce saturation(Max) is 1.5V @ 100μA, 100mA
the emitter base voltage is kept at 10V
the current rating of this device is 1A
a transition frequency of 125MHz
MPSW13RLRA Applications
There are a lot of ON Semiconductor
MPSW13RLRA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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