MPSW13RLRA

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Collector Emitter Voltage (VCEO) :

1.5V

Number of Elements :

1

Current - Collector Cutoff (Max) :

100nA ICBO

Max Collector Current :

1A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Type :

NPN - Darlington

Time@Peak Reflow Temperature-Max (s) :

30

Terminal Finish :

Tin/Lead (Sn/Pb)

Transition Frequency :

125MHz

Element Configuration :

Single

DC Current Gain (hFE) (Min) @ Ic, Vce :

10000 @ 100mA 5V

Frequency - Transition :

125MHz

Voltage - Rated DC :

30V

Polarity :

NPN

Collector Emitter Breakdown Voltage :

30V

Packaging :

Tape and Reel (TR)

Current Rating :

1A

Mount :

Through Hole

Pin Count :

3

RoHS Status :

Non-RoHS Compliant

Mounting Type :

Through Hole

Power Dissipation :

1W

HTS Code :

8541.29.00.75

Published :

2006

Vce Saturation (Max) @ Ib, Ic :

1.5V @ 100µA, 100mA

JESD-609 Code :

e0

Qualification Status :

Not Qualified

Peak Reflow Temperature (Cel) :

240

Number of Terminations :

3

Emitter Base Voltage (VEBO) :

10V

Max Power Dissipation :

1W

Continuous Collector Current :

1A

Reach Compliance Code :

not_compliant

Operating Temperature :

-55°C~150°C TJ

Collector Base Voltage (VCBO) :

30V

Number of Pins :

3

Transistor Element Material :

SILICON

Lead Free :

Contains Lead

Package / Case :

TO-226-3, TO-92-3 Long Body (Formed Leads)

Terminal Position :

BOTTOM