IXTP96P085T

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Mfr.Part #
IXTP96P085T
Manufacturer
Littelfuse
Package / Case
TO-220-3
Datasheet
Download
Description
MOSFET P-CH 85V 96A TO220AB
Stock
8
In Stock :
8

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Mounting Style :
Through Hole
Additional Feature :
AVALANCHE RATED
Mounting Type :
Through Hole
RoHS :
Details
Transistor Type :
1 P-Channel
Minimum Operating Temperature :
- 55 C
Base Product Number :
IXTP96
Factory Lead Time :
24 Weeks
Drain to Source Voltage (Vdss) :
85V
Manufacturer :
IXYS
Element Configuration :
Single
Power Dissipation (Max) :
298W (Tc)
Number of Channels :
1 Channel
Operating Mode :
ENHANCEMENT MODE
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Transistor Application :
SWITCHING
Qualification :
-
Power Dissipation :
298W
Pin Count :
3
JEDEC-95 Code :
TO-220AB
Rise Time :
34 ns
Number of Elements :
1
Terminal Form :
THROUGH-HOLE
Pbfree Code :
yes
DS Breakdown Voltage-Min :
85 V
Gate Charge (Qg) (Max) @ Vgs :
180nC @ 10V
Terminal Position :
Single
Gate to Source Voltage (Vgs) :
15V
Package / Case :
TO-220-3
Vgs(th) (Max) @ Id :
4V @ 250µA
Drive Voltage (Max Rds On,Min Rds On) :
10V
Transistor Polarity :
P-Channel
Continuous Drain Current (ID) :
96A
Published :
2010
Transistor Element Material :
SILICON
Configuration :
Single
Number of Terminations :
3
Lead Free :
Lead Free
Channel Type :
P Channel
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Series :
TrenchP™
RoHS Status :
ROHS3 Compliant
Operating Temperature :
-55°C~150°C TJ
Drain-source On Resistance-Max :
0.013 Ω
Mount :
Through Hole
Number of Terminals :
3
JESD-609 Code :
e3
Supplier Device Package :
TO-220AB
Polarity/Channel Type :
P-Channel
Package :
Tube
Rds On (Max) @ Id, Vgs :
13m Ω @ 48A, 10V
Power Dissipation-Max :
298W Tc
Radiation Hardening :
No
Maximum Operating Temperature :
+ 150 C
Reach Compliance Code :
Compliant
Packaging :
Tube
Drain Current-Max (Abs) (ID) :
96 A
Continuous Drain Current Id :
96A
FET Feature :
--
FET Type :
P-Channel
Pulsed Drain Current-Max (IDM) :
300 A
Surface Mount :
No
Drain to Source Breakdown Voltage :
-85V
Vgs (Max) :
±15V
Terminal Finish :
PURE TIN
Input Capacitance (Ciss) (Max) @ Vds :
13100pF @ 25V
Avalanche Energy Rating (Eas) :
1000 mJ
Case Connection :
DRAIN
Power Dissipation-Max (Abs) :
298 W
Channel Mode :
Enhancement
Product Type :
MOSFET
Package Shape :
RECTANGULAR
JESD-30 Code :
R-PSFM-T3
Current - Continuous Drain (Id) @ 25°C :
96A Tc
Product Category :
MOSFET
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Qualification Status :
Not Qualified
Product Status :
Active
Brand :
IXYS
Number of Pins :
3
Datasheets
IXTP96P085T
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTP96P085T from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Number of Channels:1 Channel, Package / Case:TO-220-3, Number of Terminations:3, Operating Temperature:-55°C~150°C TJ, Number of Pins:3, IXTP96P085T pinout, IXTP96P085T datasheet PDF, IXTP96P085T amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTP96P085T ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTP96P085T


P-Channel Tube 13m Ω @ 48A, 10V ±15V 13100pF @ 25V 180nC @ 10V 85V TO-220-3

IXTP96P085T Overview


Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 1000 mJ.A device's maximal input capacitance is 13100pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 96A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is -85V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.In this device, the drain current is 96 A, which is the maximum continuous current the device can conduct.In terms of pulsed drain current, it has a maximum of 300 A, which is its maximum rated peak drain current.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 15V volts.To maintain normal operation, it is recommended that the DS breakdown voltage be above 85 V.This transistor requires a 85V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).

IXTP96P085T Features


the avalanche energy rating (Eas) is 1000 mJ
a continuous drain current (ID) of 96A
a drain-to-source breakdown voltage of -85V voltage
based on its rated peak drain current 300 A.
a 85V drain to source voltage (Vdss)


IXTP96P085T Applications


There are a lot of IXYS
IXTP96P085T applications of single MOSFETs transistors.


  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
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