IXTP96P085T

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Mfr.Part #
IXTP96P085T
Manufacturer
Littelfuse
Package / Case
TO-220-3
Datasheet
Download
Description
MOSFET P-CH 85V 96A TO220AB
Stock
8
In Stock :
8

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Power Dissipation-Max :
298W Tc
Published :
2010
Product Status :
Active
Series :
TrenchP™
Channel Mode :
Enhancement
Number of Elements :
1
Qualification :
-
Base Product Number :
IXTP96
Power Dissipation-Max (Abs) :
298 W
Input Capacitance (Ciss) (Max) @ Vds :
13100pF @ 25V
Terminal Form :
THROUGH-HOLE
Transistor Element Material :
SILICON
Radiation Hardening :
No
Avalanche Energy Rating (Eas) :
1000 mJ
Terminal Position :
Single
Mount :
Through Hole
Pin Count :
3
Polarity/Channel Type :
P-Channel
Case Connection :
DRAIN
Continuous Drain Current Id :
96A
Additional Feature :
AVALANCHE RATED
Number of Terminals :
3
Maximum Operating Temperature :
+ 150 C
Configuration :
Single
Drain Current-Max (Abs) (ID) :
96 A
Pulsed Drain Current-Max (IDM) :
300 A
Reach Compliance Code :
Compliant
FET Feature :
--
Drive Voltage (Max Rds On,Min Rds On) :
10V
Rise Time :
34 ns
Packaging :
Tube
Package :
Tube
Number of Pins :
3
Package Shape :
RECTANGULAR
Number of Terminations :
3
Current - Continuous Drain (Id) @ 25°C :
96A Tc
Brand :
IXYS
Qualification Status :
Not Qualified
Minimum Operating Temperature :
- 55 C
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Package / Case :
TO-220-3
Factory Lead Time :
24 Weeks
Surface Mount :
No
Mounting Type :
Through Hole
Gate to Source Voltage (Vgs) :
15V
FET Type :
P-Channel
Drain-source On Resistance-Max :
0.013 Ω
Channel Type :
P Channel
JESD-609 Code :
e3
Element Configuration :
Single
Terminal Finish :
PURE TIN
Product Type :
MOSFET
Vgs (Max) :
±15V
Continuous Drain Current (ID) :
96A
JEDEC-95 Code :
TO-220AB
Operating Temperature :
-55°C~150°C TJ
Power Dissipation (Max) :
298W (Tc)
Transistor Type :
1 P-Channel
Drain to Source Voltage (Vdss) :
85V
Drain to Source Breakdown Voltage :
-85V
DS Breakdown Voltage-Min :
85 V
Power Dissipation :
298W
Rds On (Max) @ Id, Vgs :
13m Ω @ 48A, 10V
Operating Mode :
ENHANCEMENT MODE
Mounting Style :
Through Hole
Pbfree Code :
yes
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Manufacturer :
IXYS
Transistor Polarity :
P-Channel
JESD-30 Code :
R-PSFM-T3
RoHS :
Details
Product Category :
MOSFET
RoHS Status :
ROHS3 Compliant
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Number of Channels :
1 Channel
Lead Free :
Lead Free
Vgs(th) (Max) @ Id :
4V @ 250µA
Transistor Application :
SWITCHING
Gate Charge (Qg) (Max) @ Vgs :
180nC @ 10V
Supplier Device Package :
TO-220AB
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTP96P085T from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Number of Terminations:3, Package / Case:TO-220-3, Mounting Type:Through Hole, Operating Temperature:-55°C~150°C TJ, Number of Channels:1 Channel, IXTP96P085T pinout, IXTP96P085T datasheet PDF, IXTP96P085T amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTP96P085T ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTP96P085T


P-Channel Tube 13m Ω @ 48A, 10V ±15V 13100pF @ 25V 180nC @ 10V 85V TO-220-3

IXTP96P085T Overview


Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 1000 mJ.A device's maximal input capacitance is 13100pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 96A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is -85V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.In this device, the drain current is 96 A, which is the maximum continuous current the device can conduct.In terms of pulsed drain current, it has a maximum of 300 A, which is its maximum rated peak drain current.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 15V volts.To maintain normal operation, it is recommended that the DS breakdown voltage be above 85 V.This transistor requires a 85V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).

IXTP96P085T Features


the avalanche energy rating (Eas) is 1000 mJ
a continuous drain current (ID) of 96A
a drain-to-source breakdown voltage of -85V voltage
based on its rated peak drain current 300 A.
a 85V drain to source voltage (Vdss)


IXTP96P085T Applications


There are a lot of IXYS
IXTP96P085T applications of single MOSFETs transistors.


  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
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