IXTP96P085T
- Mfr.Part #
- IXTP96P085T
- Manufacturer
- Littelfuse
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET P-CH 85V 96A TO220AB
- Stock
- 8
- In Stock :
- 8
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Mounting Style :
- Through Hole
- Additional Feature :
- AVALANCHE RATED
- Mounting Type :
- Through Hole
- RoHS :
- Details
- Transistor Type :
- 1 P-Channel
- Minimum Operating Temperature :
- - 55 C
- Base Product Number :
- IXTP96
- Factory Lead Time :
- 24 Weeks
- Drain to Source Voltage (Vdss) :
- 85V
- Manufacturer :
- IXYS
- Element Configuration :
- Single
- Power Dissipation (Max) :
- 298W (Tc)
- Number of Channels :
- 1 Channel
- Operating Mode :
- ENHANCEMENT MODE
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Transistor Application :
- SWITCHING
- Qualification :
- -
- Power Dissipation :
- 298W
- Pin Count :
- 3
- JEDEC-95 Code :
- TO-220AB
- Rise Time :
- 34 ns
- Number of Elements :
- 1
- Terminal Form :
- THROUGH-HOLE
- Pbfree Code :
- yes
- DS Breakdown Voltage-Min :
- 85 V
- Gate Charge (Qg) (Max) @ Vgs :
- 180nC @ 10V
- Terminal Position :
- Single
- Gate to Source Voltage (Vgs) :
- 15V
- Package / Case :
- TO-220-3
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Transistor Polarity :
- P-Channel
- Continuous Drain Current (ID) :
- 96A
- Published :
- 2010
- Transistor Element Material :
- SILICON
- Configuration :
- Single
- Number of Terminations :
- 3
- Lead Free :
- Lead Free
- Channel Type :
- P Channel
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Series :
- TrenchP™
- RoHS Status :
- ROHS3 Compliant
- Operating Temperature :
- -55°C~150°C TJ
- Drain-source On Resistance-Max :
- 0.013 Ω
- Mount :
- Through Hole
- Number of Terminals :
- 3
- JESD-609 Code :
- e3
- Supplier Device Package :
- TO-220AB
- Polarity/Channel Type :
- P-Channel
- Package :
- Tube
- Rds On (Max) @ Id, Vgs :
- 13m Ω @ 48A, 10V
- Power Dissipation-Max :
- 298W Tc
- Radiation Hardening :
- No
- Maximum Operating Temperature :
- + 150 C
- Reach Compliance Code :
- Compliant
- Packaging :
- Tube
- Drain Current-Max (Abs) (ID) :
- 96 A
- Continuous Drain Current Id :
- 96A
- FET Feature :
- --
- FET Type :
- P-Channel
- Pulsed Drain Current-Max (IDM) :
- 300 A
- Surface Mount :
- No
- Drain to Source Breakdown Voltage :
- -85V
- Vgs (Max) :
- ±15V
- Terminal Finish :
- PURE TIN
- Input Capacitance (Ciss) (Max) @ Vds :
- 13100pF @ 25V
- Avalanche Energy Rating (Eas) :
- 1000 mJ
- Case Connection :
- DRAIN
- Power Dissipation-Max (Abs) :
- 298 W
- Channel Mode :
- Enhancement
- Product Type :
- MOSFET
- Package Shape :
- RECTANGULAR
- JESD-30 Code :
- R-PSFM-T3
- Current - Continuous Drain (Id) @ 25°C :
- 96A Tc
- Product Category :
- MOSFET
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Qualification Status :
- Not Qualified
- Product Status :
- Active
- Brand :
- IXYS
- Number of Pins :
- 3
- Datasheets
- IXTP96P085T

P-Channel Tube 13m Ω @ 48A, 10V ±15V 13100pF @ 25V 180nC @ 10V 85V TO-220-3
IXTP96P085T Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 1000 mJ.A device's maximal input capacitance is 13100pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 96A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is -85V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.In this device, the drain current is 96 A, which is the maximum continuous current the device can conduct.In terms of pulsed drain current, it has a maximum of 300 A, which is its maximum rated peak drain current.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 15V volts.To maintain normal operation, it is recommended that the DS breakdown voltage be above 85 V.This transistor requires a 85V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).
IXTP96P085T Features
the avalanche energy rating (Eas) is 1000 mJ
a continuous drain current (ID) of 96A
a drain-to-source breakdown voltage of -85V voltage
based on its rated peak drain current 300 A.
a 85V drain to source voltage (Vdss)
IXTP96P085T Applications
There are a lot of IXYS
IXTP96P085T applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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