IXTP08N100P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max (Abs) :

42 W

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Rise Time :

37ns

Pin Count :

3

Operating Temperature :

-55°C~150°C TJ

Series :

Polar™

RoHS :

Details

FET Type :

N-Channel

Product Status :

Active

Number of Terminals :

3

Qualification Status :

Not Qualified

ECCN Code :

EAR99

Width :

4.83 mm

Number of Elements :

1

Drain Current-Max (Abs) (ID) :

0.8A

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Drain to Source Breakdown Voltage :

1kV

Additional Feature :

AVALANCHE RATED

Transistor Element Material :

SILICON

Configuration :

Single

Drain-source On Resistance-Max :

20 Ω

Vgs(th) (Max) @ Id :

4V @ 50μA

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Base Product Number :

IXTP08

Supplier Device Package :

TO-220AB

Pulsed Drain Current-Max (IDM) :

1.8A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

ROHS3 Compliant

Product Category :

MOSFET

Published :

2009

Number of Terminations :

3

Number of Channels :

1 Channel

Operating Mode :

ENHANCEMENT MODE

Height :

9.15 mm

Length :

10.66 mm

Lead Free :

Lead Free

Drain to Source Voltage (Vdss) :

1000V

Packaging :

Tube

Reach Compliance Code :

Compliant

Minimum Operating Temperature :

- 55 C

Terminal Form :

THROUGH-HOLE

Brand :

IXYS

Power Dissipation (Max) :

42W (Tc)

Polarity/Channel Type :

N-Channel

Mount :

Through Hole

JEDEC-95 Code :

TO-220AB

Transistor Application :

SWITCHING

DS Breakdown Voltage-Min :

1000 V

Power Dissipation :

42W

Fall Time (Typ) :

34 ns

Element Configuration :

Single

Gate to Source Voltage (Vgs) :

20V

Vgs (Max) :

±20V

Transistor Polarity :

N-Channel

Drive Voltage (Max Rds On,Min Rds On) :

10V

Mounting Type :

Through Hole

Power Dissipation-Max :

42W Tc

Product Type :

MOSFET

JESD-30 Code :

R-PSFM-T3

JESD-609 Code :

e1

Pbfree Code :

yes

Current - Continuous Drain (Id) @ 25°C :

800mA Tc

Channel Mode :

Enhancement

Surface Mount :

No

Input Capacitance (Ciss) (Max) @ Vds :

240pF @ 25V

Rds On (Max) @ Id, Vgs :

20 Ω @ 500mA, 10V

Package :

Tube

Maximum Operating Temperature :

+ 150 C

Terminal Position :

Single

Case Connection :

DRAIN

Package Shape :

RECTANGULAR

FET Feature :

--

Gate Charge (Qg) (Max) @ Vgs :

11.3nC @ 10V

Turn-Off Delay Time :

35 ns

Manufacturer :

IXYS

Mounting Style :

Through Hole

Continuous Drain Current (ID) :

800mA

Package / Case :

TO-220-3

Transistor Type :

1 N-Channel

Avalanche Energy Rating (Eas) :

80 mJ

Factory Lead Time :

24 Weeks