IXTP08N100P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation (Max) :

42W (Tc)

Transistor Polarity :

N-Channel

Pulsed Drain Current-Max (IDM) :

1.8A

Gate Charge (Qg) (Max) @ Vgs :

11.3nC @ 10V

Height :

9.15 mm

Maximum Operating Temperature :

+ 150 C

Qualification Status :

Not Qualified

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Channels :

1 Channel

Reach Compliance Code :

Compliant

Base Product Number :

IXTP08

Input Capacitance (Ciss) (Max) @ Vds :

240pF @ 25V

Terminal Position :

Single

Transistor Element Material :

SILICON

Polarity/Channel Type :

N-Channel

Power Dissipation :

42W

Current - Continuous Drain (Id) @ 25°C :

800mA Tc

Package Shape :

RECTANGULAR

Number of Terminations :

3

Product Category :

MOSFET

Avalanche Energy Rating (Eas) :

80 mJ

Packaging :

Tube

Number of Terminals :

3

Terminal Form :

THROUGH-HOLE

Surface Mount :

No

Series :

Polar™

Published :

2009

JESD-30 Code :

R-PSFM-T3

Rds On (Max) @ Id, Vgs :

20 Ω @ 500mA, 10V

Drain-source On Resistance-Max :

20 Ω

Mounting Type :

Through Hole

Element Configuration :

Single

Supplier Device Package :

TO-220AB

Manufacturer :

IXYS

ECCN Code :

EAR99

Turn-Off Delay Time :

35 ns

Gate to Source Voltage (Vgs) :

20V

Length :

10.66 mm

Package :

Tube

Rise Time :

37ns

Configuration :

Single

Vgs(th) (Max) @ Id :

4V @ 50μA

FET Type :

N-Channel

Width :

4.83 mm

Pin Count :

3

Drain to Source Voltage (Vdss) :

1000V

Product Type :

MOSFET

Package / Case :

TO-220-3

Transistor Application :

SWITCHING

Vgs (Max) :

±20V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Case Connection :

DRAIN

Mount :

Through Hole

Power Dissipation-Max (Abs) :

42 W

DS Breakdown Voltage-Min :

1000 V

Transistor Type :

1 N-Channel

Drain to Source Breakdown Voltage :

1kV

Factory Lead Time :

24 Weeks

Additional Feature :

AVALANCHE RATED

Number of Elements :

1

Minimum Operating Temperature :

- 55 C

RoHS Status :

ROHS3 Compliant

Channel Mode :

Enhancement

Lead Free :

Lead Free

FET Feature :

--

Operating Mode :

ENHANCEMENT MODE

Brand :

IXYS

Drain Current-Max (Abs) (ID) :

0.8A

Operating Temperature :

-55°C~150°C TJ

RoHS :

Details

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Mounting Style :

Through Hole

Continuous Drain Current (ID) :

800mA

Fall Time (Typ) :

34 ns

Pbfree Code :

yes

JEDEC-95 Code :

TO-220AB

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Power Dissipation-Max :

42W Tc

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Product Status :

Active

JESD-609 Code :

e1