IXTP08N100P

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Mfr.Part #
IXTP08N100P
Manufacturer
Littelfuse
Package / Case
TO-220-3
Datasheet
Download
Description
MOSFET N-CH 1000V 800MA TO220AB
Stock
287
In Stock :
287

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Transistor Element Material :
SILICON
Number of Terminals :
3
Fall Time (Typ) :
34 ns
Configuration :
Single
Height :
9.15 mm
FET Type :
N-Channel
Base Product Number :
IXTP08
Case Connection :
DRAIN
JESD-609 Code :
e1
Terminal Form :
THROUGH-HOLE
Packaging :
Tube
Polarity/Channel Type :
N-Channel
FET Feature :
--
Drive Voltage (Max Rds On,Min Rds On) :
10V
Mounting Style :
Through Hole
Additional Feature :
AVALANCHE RATED
Terminal Position :
Single
Turn-Off Delay Time :
35 ns
Pulsed Drain Current-Max (IDM) :
1.8A
Operating Temperature :
-55°C~150°C TJ
RoHS :
Details
Gate to Source Voltage (Vgs) :
20V
Width :
4.83 mm
Manufacturer :
IXYS
Number of Elements :
1
Minimum Operating Temperature :
- 55 C
Power Dissipation-Max :
42W Tc
Product Category :
MOSFET
Number of Terminations :
3
Input Capacitance (Ciss) (Max) @ Vds :
240pF @ 25V
Element Configuration :
Single
Drain to Source Voltage (Vdss) :
1000V
Package / Case :
TO-220-3
Transistor Polarity :
N-Channel
Current - Continuous Drain (Id) @ 25°C :
800mA Tc
Power Dissipation (Max) :
42W (Tc)
Surface Mount :
No
Transistor Application :
SWITCHING
Length :
10.66 mm
Rise Time :
37ns
Pbfree Code :
yes
Maximum Operating Temperature :
+ 150 C
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Factory Lead Time :
24 Weeks
Gate Charge (Qg) (Max) @ Vgs :
11.3nC @ 10V
Reach Compliance Code :
Compliant
Drain to Source Breakdown Voltage :
1kV
Lead Free :
Lead Free
Product Type :
MOSFET
ECCN Code :
EAR99
JESD-30 Code :
R-PSFM-T3
Package Shape :
RECTANGULAR
Power Dissipation :
42W
Qualification Status :
Not Qualified
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Drain-source On Resistance-Max :
20 Ω
Published :
2009
Operating Mode :
ENHANCEMENT MODE
Package :
Tube
Rds On (Max) @ Id, Vgs :
20 Ω @ 500mA, 10V
Vgs(th) (Max) @ Id :
4V @ 50μA
Number of Channels :
1 Channel
Continuous Drain Current (ID) :
800mA
Mounting Type :
Through Hole
Power Dissipation-Max (Abs) :
42 W
Supplier Device Package :
TO-220AB
Brand :
IXYS
Pin Count :
3
Product Status :
Active
Avalanche Energy Rating (Eas) :
80 mJ
Mount :
Through Hole
Drain Current-Max (Abs) (ID) :
0.8A
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
DS Breakdown Voltage-Min :
1000 V
RoHS Status :
ROHS3 Compliant
Transistor Type :
1 N-Channel
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Channel Mode :
Enhancement
Vgs (Max) :
±20V
JEDEC-95 Code :
TO-220AB
Series :
Polar™
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTP08N100P from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Number of Terminations:3, Package / Case:TO-220-3, Number of Channels:1 Channel, Mounting Type:Through Hole, IXTP08N100P pinout, IXTP08N100P datasheet PDF, IXTP08N100P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTP08N100P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTP08N100P


N-Channel Tube 20 Ω @ 500mA, 10V ±20V 240pF @ 25V 11.3nC @ 10V 1000V TO-220-3

IXTP08N100P Overview


This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 80 mJ.The maximum input capacitance of this device is 240pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 800mA.When VGS=1kV, and ID flows to VDS at 1kVVDS, the drain-source breakdown voltage is 1kV in this device.As shown in the table below, the drain current of this device is 0.8A.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 35 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 1.8A.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 1000 V.The drain-to-source voltage (Vdss) of this transistor needs to be at 1000V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.

IXTP08N100P Features


the avalanche energy rating (Eas) is 80 mJ
a continuous drain current (ID) of 800mA
a drain-to-source breakdown voltage of 1kV voltage
the turn-off delay time is 35 ns
based on its rated peak drain current 1.8A.
a 1000V drain to source voltage (Vdss)


IXTP08N100P Applications


There are a lot of IXYS
IXTP08N100P applications of single MOSFETs transistors.


  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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