IXTP08N100P
- Mfr.Part #
- IXTP08N100P
- Manufacturer
- Littelfuse
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 1000V 800MA TO220AB
- Stock
- 287
- In Stock :
- 287
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- RoHS :
- Details
- Power Dissipation :
- 42W
- Number of Terminations :
- 3
- Product Type :
- MOSFET
- Package / Case :
- TO-220-3
- Pulsed Drain Current-Max (IDM) :
- 1.8A
- Mount :
- Through Hole
- Input Capacitance (Ciss) (Max) @ Vds :
- 240pF @ 25V
- Fall Time (Typ) :
- 34 ns
- Mounting Style :
- Through Hole
- Maximum Operating Temperature :
- + 150 C
- Number of Terminals :
- 3
- Operating Temperature :
- -55°C~150°C TJ
- Qualification Status :
- Not Qualified
- ECCN Code :
- EAR99
- Power Dissipation-Max (Abs) :
- 42 W
- Drain to Source Breakdown Voltage :
- 1kV
- Minimum Operating Temperature :
- - 55 C
- Gate Charge (Qg) (Max) @ Vgs :
- 11.3nC @ 10V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- RoHS Status :
- ROHS3 Compliant
- Width :
- 4.83 mm
- DS Breakdown Voltage-Min :
- 1000 V
- Drain Current-Max (Abs) (ID) :
- 0.8A
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Pbfree Code :
- yes
- Polarity/Channel Type :
- N-Channel
- Mounting Type :
- Through Hole
- Product Status :
- Active
- FET Feature :
- --
- Drain-source On Resistance-Max :
- 20 Ω
- Power Dissipation-Max :
- 42W Tc
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Surface Mount :
- No
- Continuous Drain Current (ID) :
- 800mA
- Packaging :
- Tube
- Vgs(th) (Max) @ Id :
- 4V @ 50μA
- Power Dissipation (Max) :
- 42W (Tc)
- Rise Time :
- 37ns
- Lead Free :
- Lead Free
- Vgs (Max) :
- ±20V
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- FET Type :
- N-Channel
- Current - Continuous Drain (Id) @ 25°C :
- 800mA Tc
- JESD-30 Code :
- R-PSFM-T3
- Turn-Off Delay Time :
- 35 ns
- Manufacturer :
- IXYS
- Additional Feature :
- AVALANCHE RATED
- JESD-609 Code :
- e1
- Length :
- 10.66 mm
- Pin Count :
- 3
- Gate to Source Voltage (Vgs) :
- 20V
- Package :
- Tube
- Channel Mode :
- Enhancement
- JEDEC-95 Code :
- TO-220AB
- Terminal Form :
- THROUGH-HOLE
- Brand :
- IXYS
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Transistor Element Material :
- SILICON
- Reach Compliance Code :
- Compliant
- Base Product Number :
- IXTP08
- Operating Mode :
- ENHANCEMENT MODE
- Transistor Application :
- SWITCHING
- Number of Elements :
- 1
- Supplier Device Package :
- TO-220AB
- Series :
- Polar™
- Factory Lead Time :
- 24 Weeks
- Transistor Type :
- 1 N-Channel
- Published :
- 2009
- Height :
- 9.15 mm
- Element Configuration :
- Single
- Configuration :
- Single
- Product Category :
- MOSFET
- Transistor Polarity :
- N-Channel
- Number of Channels :
- 1 Channel
- Package Shape :
- RECTANGULAR
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Case Connection :
- DRAIN
- Avalanche Energy Rating (Eas) :
- 80 mJ
- Drain to Source Voltage (Vdss) :
- 1000V
- Rds On (Max) @ Id, Vgs :
- 20 Ω @ 500mA, 10V
- Terminal Position :
- Single
- Datasheets
- IXTP08N100P
IXTP08N100P Documents

N-Channel Tube 20 Ω @ 500mA, 10V ±20V 240pF @ 25V 11.3nC @ 10V 1000V TO-220-3
IXTP08N100P Overview
This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 80 mJ.The maximum input capacitance of this device is 240pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 800mA.When VGS=1kV, and ID flows to VDS at 1kVVDS, the drain-source breakdown voltage is 1kV in this device.As shown in the table below, the drain current of this device is 0.8A.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 35 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 1.8A.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 1000 V.The drain-to-source voltage (Vdss) of this transistor needs to be at 1000V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.
IXTP08N100P Features
the avalanche energy rating (Eas) is 80 mJ
a continuous drain current (ID) of 800mA
a drain-to-source breakdown voltage of 1kV voltage
the turn-off delay time is 35 ns
based on its rated peak drain current 1.8A.
a 1000V drain to source voltage (Vdss)
IXTP08N100P Applications
There are a lot of IXYS
IXTP08N100P applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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