IXTP08N100P

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Mfr.Part #
IXTP08N100P
Manufacturer
Littelfuse
Package / Case
TO-220-3
Datasheet
Download
Description
MOSFET N-CH 1000V 800MA TO220AB
Stock
287
In Stock :
287

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Qualification Status :
Not Qualified
Brand :
IXYS
Element Configuration :
Single
Continuous Drain Current (ID) :
800mA
Number of Terminals :
3
Drain Current-Max (Abs) (ID) :
0.8A
Product Category :
MOSFET
Drive Voltage (Max Rds On,Min Rds On) :
10V
Height :
9.15 mm
Base Product Number :
IXTP08
JESD-30 Code :
R-PSFM-T3
Product Status :
Active
Number of Channels :
1 Channel
Maximum Operating Temperature :
+ 150 C
Reach Compliance Code :
Compliant
RoHS :
Details
FET Type :
N-Channel
Terminal Form :
THROUGH-HOLE
Rds On (Max) @ Id, Vgs :
20 Ω @ 500mA, 10V
Pbfree Code :
yes
Package / Case :
TO-220-3
DS Breakdown Voltage-Min :
1000 V
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Length :
10.66 mm
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Surface Mount :
No
Package :
Tube
Power Dissipation :
42W
Series :
Polar™
Polarity/Channel Type :
N-Channel
FET Feature :
--
Package Shape :
RECTANGULAR
JEDEC-95 Code :
TO-220AB
Pin Count :
3
Vgs(th) (Max) @ Id :
4V @ 50μA
Drain to Source Voltage (Vdss) :
1000V
Packaging :
Tube
Minimum Operating Temperature :
- 55 C
Input Capacitance (Ciss) (Max) @ Vds :
240pF @ 25V
Rise Time :
37ns
Drain to Source Breakdown Voltage :
1kV
Fall Time (Typ) :
34 ns
Power Dissipation (Max) :
42W (Tc)
Additional Feature :
AVALANCHE RATED
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Pulsed Drain Current-Max (IDM) :
1.8A
JESD-609 Code :
e1
Product Type :
MOSFET
Avalanche Energy Rating (Eas) :
80 mJ
Mounting Type :
Through Hole
Transistor Polarity :
N-Channel
Turn-Off Delay Time :
35 ns
Drain-source On Resistance-Max :
20 Ω
Operating Mode :
ENHANCEMENT MODE
Configuration :
Single
Power Dissipation-Max (Abs) :
42 W
Published :
2009
Vgs (Max) :
±20V
Terminal Position :
Single
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Gate to Source Voltage (Vgs) :
20V
Number of Elements :
1
Gate Charge (Qg) (Max) @ Vgs :
11.3nC @ 10V
Manufacturer :
IXYS
Case Connection :
DRAIN
RoHS Status :
ROHS3 Compliant
Transistor Type :
1 N-Channel
Power Dissipation-Max :
42W Tc
Operating Temperature :
-55°C~150°C TJ
ECCN Code :
EAR99
Current - Continuous Drain (Id) @ 25°C :
800mA Tc
Factory Lead Time :
24 Weeks
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Mount :
Through Hole
Lead Free :
Lead Free
Width :
4.83 mm
Mounting Style :
Through Hole
Supplier Device Package :
TO-220AB
Channel Mode :
Enhancement
Transistor Application :
SWITCHING
Number of Terminations :
3
Transistor Element Material :
SILICON
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTP08N100P from Chip IC,where excellence meets affordability. This product stands out with its Number of Channels:1 Channel, Package / Case:TO-220-3, Mounting Type:Through Hole, Operating Temperature:-55°C~150°C TJ, Number of Terminations:3, IXTP08N100P pinout, IXTP08N100P datasheet PDF, IXTP08N100P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTP08N100P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTP08N100P


N-Channel Tube 20 Ω @ 500mA, 10V ±20V 240pF @ 25V 11.3nC @ 10V 1000V TO-220-3

IXTP08N100P Overview


This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 80 mJ.The maximum input capacitance of this device is 240pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 800mA.When VGS=1kV, and ID flows to VDS at 1kVVDS, the drain-source breakdown voltage is 1kV in this device.As shown in the table below, the drain current of this device is 0.8A.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 35 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 1.8A.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 1000 V.The drain-to-source voltage (Vdss) of this transistor needs to be at 1000V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.

IXTP08N100P Features


the avalanche energy rating (Eas) is 80 mJ
a continuous drain current (ID) of 800mA
a drain-to-source breakdown voltage of 1kV voltage
the turn-off delay time is 35 ns
based on its rated peak drain current 1.8A.
a 1000V drain to source voltage (Vdss)


IXTP08N100P Applications


There are a lot of IXYS
IXTP08N100P applications of single MOSFETs transistors.


  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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