IXTP08N100P

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Mfr.Part #
IXTP08N100P
Manufacturer
Littelfuse
Package / Case
TO-220-3
Datasheet
Download
Description
MOSFET N-CH 1000V 800MA TO220AB
Stock
287
In Stock :
287

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Mounting Type :
Through Hole
Transistor Application :
SWITCHING
Width :
4.83 mm
JEDEC-95 Code :
TO-220AB
Maximum Operating Temperature :
+ 150 C
Number of Elements :
1
Package Shape :
RECTANGULAR
Package / Case :
TO-220-3
Pulsed Drain Current-Max (IDM) :
1.8A
Power Dissipation-Max :
42W Tc
Qualification Status :
Not Qualified
RoHS :
Details
Lead Free :
Lead Free
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Power Dissipation-Max (Abs) :
42 W
Configuration :
Single
Number of Terminations :
3
Published :
2009
Avalanche Energy Rating (Eas) :
80 mJ
Product Status :
Active
Surface Mount :
No
Length :
10.66 mm
Power Dissipation :
42W
Mounting Style :
Through Hole
Manufacturer :
IXYS
Transistor Polarity :
N-Channel
Operating Mode :
ENHANCEMENT MODE
Gate to Source Voltage (Vgs) :
20V
Packaging :
Tube
Number of Channels :
1 Channel
Minimum Operating Temperature :
- 55 C
Pin Count :
3
Additional Feature :
AVALANCHE RATED
Product Category :
MOSFET
Transistor Type :
1 N-Channel
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Continuous Drain Current (ID) :
800mA
Current - Continuous Drain (Id) @ 25°C :
800mA Tc
Vgs (Max) :
±20V
Supplier Device Package :
TO-220AB
FET Type :
N-Channel
FET Feature :
--
DS Breakdown Voltage-Min :
1000 V
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Brand :
IXYS
Series :
Polar™
Element Configuration :
Single
Rds On (Max) @ Id, Vgs :
20 Ω @ 500mA, 10V
Number of Terminals :
3
Height :
9.15 mm
Turn-Off Delay Time :
35 ns
Drain Current-Max (Abs) (ID) :
0.8A
Mount :
Through Hole
Product Type :
MOSFET
Operating Temperature :
-55°C~150°C TJ
Case Connection :
DRAIN
Drain-source On Resistance-Max :
20 Ω
Rise Time :
37ns
Input Capacitance (Ciss) (Max) @ Vds :
240pF @ 25V
Reach Compliance Code :
Compliant
Fall Time (Typ) :
34 ns
Base Product Number :
IXTP08
Channel Mode :
Enhancement
Terminal Position :
Single
Drain to Source Voltage (Vdss) :
1000V
Transistor Element Material :
SILICON
Gate Charge (Qg) (Max) @ Vgs :
11.3nC @ 10V
Package :
Tube
Pbfree Code :
yes
Power Dissipation (Max) :
42W (Tc)
Drive Voltage (Max Rds On,Min Rds On) :
10V
ECCN Code :
EAR99
JESD-609 Code :
e1
JESD-30 Code :
R-PSFM-T3
Terminal Form :
THROUGH-HOLE
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Drain to Source Breakdown Voltage :
1kV
Vgs(th) (Max) @ Id :
4V @ 50μA
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Polarity/Channel Type :
N-Channel
RoHS Status :
ROHS3 Compliant
Factory Lead Time :
24 Weeks
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTP08N100P from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Package / Case:TO-220-3, Number of Terminations:3, Number of Channels:1 Channel, Operating Temperature:-55°C~150°C TJ, IXTP08N100P pinout, IXTP08N100P datasheet PDF, IXTP08N100P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTP08N100P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTP08N100P


N-Channel Tube 20 Ω @ 500mA, 10V ±20V 240pF @ 25V 11.3nC @ 10V 1000V TO-220-3

IXTP08N100P Overview


This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 80 mJ.The maximum input capacitance of this device is 240pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 800mA.When VGS=1kV, and ID flows to VDS at 1kVVDS, the drain-source breakdown voltage is 1kV in this device.As shown in the table below, the drain current of this device is 0.8A.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 35 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 1.8A.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 1000 V.The drain-to-source voltage (Vdss) of this transistor needs to be at 1000V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.

IXTP08N100P Features


the avalanche energy rating (Eas) is 80 mJ
a continuous drain current (ID) of 800mA
a drain-to-source breakdown voltage of 1kV voltage
the turn-off delay time is 35 ns
based on its rated peak drain current 1.8A.
a 1000V drain to source voltage (Vdss)


IXTP08N100P Applications


There are a lot of IXYS
IXTP08N100P applications of single MOSFETs transistors.


  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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