IXTP08N100P

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Mfr.Part #
IXTP08N100P
Manufacturer
Littelfuse
Package / Case
TO-220-3
Datasheet
Download
Description
MOSFET N-CH 1000V 800MA TO220AB
Stock
287
In Stock :
287

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Transistor Application :
SWITCHING
Number of Terminals :
3
Element Configuration :
Single
Transistor Type :
1 N-Channel
Brand :
IXYS
Avalanche Energy Rating (Eas) :
80 mJ
Mounting Type :
Through Hole
Drain to Source Breakdown Voltage :
1kV
Terminal Position :
Single
FET Type :
N-Channel
Packaging :
Tube
Terminal Form :
THROUGH-HOLE
Reach Compliance Code :
Compliant
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Factory Lead Time :
24 Weeks
Number of Channels :
1 Channel
Additional Feature :
AVALANCHE RATED
Power Dissipation-Max (Abs) :
42 W
Minimum Operating Temperature :
- 55 C
Drain to Source Voltage (Vdss) :
1000V
Manufacturer :
IXYS
Configuration :
Single
Qualification Status :
Not Qualified
Power Dissipation :
42W
FET Feature :
--
Rise Time :
37ns
Pin Count :
3
ECCN Code :
EAR99
Number of Terminations :
3
Power Dissipation-Max :
42W Tc
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Product Type :
MOSFET
Gate Charge (Qg) (Max) @ Vgs :
11.3nC @ 10V
Product Status :
Active
Height :
9.15 mm
Vgs(th) (Max) @ Id :
4V @ 50μA
Drain-source On Resistance-Max :
20 Ω
Drain Current-Max (Abs) (ID) :
0.8A
Pbfree Code :
yes
JESD-30 Code :
R-PSFM-T3
Published :
2009
Length :
10.66 mm
Current - Continuous Drain (Id) @ 25°C :
800mA Tc
RoHS :
Details
Mounting Style :
Through Hole
Continuous Drain Current (ID) :
800mA
Power Dissipation (Max) :
42W (Tc)
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Channel Mode :
Enhancement
Package Shape :
RECTANGULAR
RoHS Status :
ROHS3 Compliant
Transistor Polarity :
N-Channel
JEDEC-95 Code :
TO-220AB
Turn-Off Delay Time :
35 ns
Rds On (Max) @ Id, Vgs :
20 Ω @ 500mA, 10V
DS Breakdown Voltage-Min :
1000 V
Number of Elements :
1
Surface Mount :
No
Gate to Source Voltage (Vgs) :
20V
Pulsed Drain Current-Max (IDM) :
1.8A
Input Capacitance (Ciss) (Max) @ Vds :
240pF @ 25V
Fall Time (Typ) :
34 ns
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Package :
Tube
Maximum Operating Temperature :
+ 150 C
Transistor Element Material :
SILICON
Product Category :
MOSFET
Package / Case :
TO-220-3
Operating Temperature :
-55°C~150°C TJ
JESD-609 Code :
e1
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Supplier Device Package :
TO-220AB
Width :
4.83 mm
Vgs (Max) :
±20V
Operating Mode :
ENHANCEMENT MODE
Lead Free :
Lead Free
Case Connection :
DRAIN
Drive Voltage (Max Rds On,Min Rds On) :
10V
Polarity/Channel Type :
N-Channel
Base Product Number :
IXTP08
Mount :
Through Hole
Series :
Polar™
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTP08N100P from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Number of Channels:1 Channel, Number of Terminations:3, Package / Case:TO-220-3, Operating Temperature:-55°C~150°C TJ, IXTP08N100P pinout, IXTP08N100P datasheet PDF, IXTP08N100P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTP08N100P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTP08N100P


N-Channel Tube 20 Ω @ 500mA, 10V ±20V 240pF @ 25V 11.3nC @ 10V 1000V TO-220-3

IXTP08N100P Overview


This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 80 mJ.The maximum input capacitance of this device is 240pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 800mA.When VGS=1kV, and ID flows to VDS at 1kVVDS, the drain-source breakdown voltage is 1kV in this device.As shown in the table below, the drain current of this device is 0.8A.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 35 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 1.8A.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 1000 V.The drain-to-source voltage (Vdss) of this transistor needs to be at 1000V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.

IXTP08N100P Features


the avalanche energy rating (Eas) is 80 mJ
a continuous drain current (ID) of 800mA
a drain-to-source breakdown voltage of 1kV voltage
the turn-off delay time is 35 ns
based on its rated peak drain current 1.8A.
a 1000V drain to source voltage (Vdss)


IXTP08N100P Applications


There are a lot of IXYS
IXTP08N100P applications of single MOSFETs transistors.


  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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