IXTP08N100P
- Mfr.Part #
- IXTP08N100P
- Manufacturer
- Littelfuse
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 1000V 800MA TO220AB
- Stock
- 287
- In Stock :
- 287
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Input Capacitance (Ciss) (Max) @ Vds :
- 240pF @ 25V
- FET Feature :
- --
- JEDEC-95 Code :
- TO-220AB
- Turn-Off Delay Time :
- 35 ns
- Minimum Operating Temperature :
- - 55 C
- Supplier Device Package :
- TO-220AB
- Product Category :
- MOSFET
- Factory Lead Time :
- 24 Weeks
- Package / Case :
- TO-220-3
- Vgs(th) (Max) @ Id :
- 4V @ 50μA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Manufacturer :
- IXYS
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Product Type :
- MOSFET
- Current - Continuous Drain (Id) @ 25°C :
- 800mA Tc
- Element Configuration :
- Single
- Polarity/Channel Type :
- N-Channel
- Series :
- Polar™
- Operating Temperature :
- -55°C~150°C TJ
- ECCN Code :
- EAR99
- Rise Time :
- 37ns
- Number of Channels :
- 1 Channel
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Length :
- 10.66 mm
- Mounting Style :
- Through Hole
- Brand :
- IXYS
- Rds On (Max) @ Id, Vgs :
- 20 Ω @ 500mA, 10V
- Pbfree Code :
- yes
- Transistor Polarity :
- N-Channel
- Channel Mode :
- Enhancement
- Fall Time (Typ) :
- 34 ns
- Qualification Status :
- Not Qualified
- Width :
- 4.83 mm
- Number of Terminations :
- 3
- Lead Free :
- Lead Free
- Drain to Source Breakdown Voltage :
- 1kV
- Pulsed Drain Current-Max (IDM) :
- 1.8A
- Published :
- 2009
- Configuration :
- Single
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Power Dissipation (Max) :
- 42W (Tc)
- Number of Terminals :
- 3
- Pin Count :
- 3
- JESD-30 Code :
- R-PSFM-T3
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Terminal Form :
- THROUGH-HOLE
- FET Type :
- N-Channel
- Transistor Application :
- SWITCHING
- Power Dissipation-Max (Abs) :
- 42 W
- Power Dissipation :
- 42W
- Drain to Source Voltage (Vdss) :
- 1000V
- Number of Elements :
- 1
- Transistor Element Material :
- SILICON
- Gate Charge (Qg) (Max) @ Vgs :
- 11.3nC @ 10V
- Additional Feature :
- AVALANCHE RATED
- Mount :
- Through Hole
- Gate to Source Voltage (Vgs) :
- 20V
- Maximum Operating Temperature :
- + 150 C
- Package Shape :
- RECTANGULAR
- Height :
- 9.15 mm
- Power Dissipation-Max :
- 42W Tc
- Product Status :
- Active
- JESD-609 Code :
- e1
- Reach Compliance Code :
- Compliant
- Operating Mode :
- ENHANCEMENT MODE
- Surface Mount :
- No
- Drain Current-Max (Abs) (ID) :
- 0.8A
- Case Connection :
- DRAIN
- Continuous Drain Current (ID) :
- 800mA
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Packaging :
- Tube
- RoHS :
- Details
- Mounting Type :
- Through Hole
- Terminal Position :
- Single
- Vgs (Max) :
- ±20V
- DS Breakdown Voltage-Min :
- 1000 V
- Package :
- Tube
- Drain-source On Resistance-Max :
- 20 Ω
- Base Product Number :
- IXTP08
- Transistor Type :
- 1 N-Channel
- Avalanche Energy Rating (Eas) :
- 80 mJ
- RoHS Status :
- ROHS3 Compliant
- Datasheets
- IXTP08N100P
IXTP08N100P Documents

N-Channel Tube 20 Ω @ 500mA, 10V ±20V 240pF @ 25V 11.3nC @ 10V 1000V TO-220-3
IXTP08N100P Overview
This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 80 mJ.The maximum input capacitance of this device is 240pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 800mA.When VGS=1kV, and ID flows to VDS at 1kVVDS, the drain-source breakdown voltage is 1kV in this device.As shown in the table below, the drain current of this device is 0.8A.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 35 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 1.8A.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 1000 V.The drain-to-source voltage (Vdss) of this transistor needs to be at 1000V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.
IXTP08N100P Features
the avalanche energy rating (Eas) is 80 mJ
a continuous drain current (ID) of 800mA
a drain-to-source breakdown voltage of 1kV voltage
the turn-off delay time is 35 ns
based on its rated peak drain current 1.8A.
a 1000V drain to source voltage (Vdss)
IXTP08N100P Applications
There are a lot of IXYS
IXTP08N100P applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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