IXTP08N50D2
- Mfr.Part #
- IXTP08N50D2
- Manufacturer
- Littelfuse
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 800MA TO220AB
- Stock
- 19,239
- In Stock :
- 19,239
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drain to Source Breakdown Voltage :
- 500V
- Rds On (Max) @ Id, Vgs :
- 4.6 Ω @ 400mA, 0V
- Transistor Type :
- 1 N-Channel
- Reach Compliance Code :
- Unknown
- Maximum Operating Temperature :
- + 150 C
- JEDEC-95 Code :
- TO-220AB
- Product Type :
- MOSFET
- Operating Temperature :
- -55°C~150°C TJ
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Pin Count :
- 3
- Supplier Device Package :
- TO-220AB
- Case Connection :
- DRAIN
- Published :
- 2009
- RoHS Status :
- ROHS3 Compliant
- Transistor Element Material :
- SILICON
- Number of Pins :
- 3
- Qualification Status :
- Not Qualified
- Minimum Operating Temperature :
- - 55 C
- Package / Case :
- TO-220-3
- Lead Free :
- Lead Free
- Mounting Style :
- Through Hole
- Number of Terminations :
- 3
- Factory Lead Time :
- 24 Weeks
- Base Product Number :
- IXTP08
- Channel Mode :
- Depletion
- Number of Elements :
- 1
- Drain to Source Voltage (Vdss) :
- 500V
- Packaging :
- Tube
- Power Dissipation-Max :
- 60W Tc
- Gate Charge (Qg) (Max) @ Vgs :
- 12.7nC @ 5V
- Power Dissipation (Max) :
- 60W (Tc)
- FET Feature :
- Depletion Mode
- Vgs(th) (Max) @ Id :
- --
- Continuous Drain Current (ID) :
- 800mA
- Gate to Source Voltage (Vgs) :
- 20V
- Configuration :
- Single
- Series :
- --
- Mount :
- Through Hole
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- FET Type :
- N-Channel
- Pbfree Code :
- yes
- Vgs (Max) :
- ±20V
- Rise Time :
- 54 ns
- Mounting Type :
- Through Hole
- Brand :
- IXYS
- Element Configuration :
- Single
- Product Category :
- MOSFET
- Current - Continuous Drain (Id) @ 25°C :
- 800mA Tc
- Package :
- Tube
- Transistor Polarity :
- N-Channel
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Drive Voltage (Max Rds On, Min Rds On) :
- --
- Number of Channels :
- 1 Channel
- Input Capacitance (Ciss) (Max) @ Vds :
- 312pF @ 25V
- Power Dissipation :
- 60W
- Transistor Application :
- AMPLIFIER
- Product Status :
- Active
- RoHS :
- Details
- Manufacturer :
- IXYS
- Datasheets
- IXTP08N50D2

N-Channel Tube 4.6 Ω @ 400mA, 0V ±20V 312pF @ 25V 12.7nC @ 5V 500V TO-220-3
IXTP08N50D2 Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 312pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 800mA continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 500V, and this device has a drainage-to-source breakdown voltage of 500VV.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.For this transistor to work, a voltage 500V is required between drain and source (Vdss).
IXTP08N50D2 Features
a continuous drain current (ID) of 800mA
a drain-to-source breakdown voltage of 500V voltage
a 500V drain to source voltage (Vdss)
IXTP08N50D2 Applications
There are a lot of IXYS
IXTP08N50D2 applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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