IXTP05N100M

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Series :

--

Terminal Form :

THROUGH-HOLE

Terminal Position :

Single

JEDEC-95 Code :

TO-220AB

Packaging :

Tube

Type :

High Voltage MOSFET

Mounting Type :

Through Hole

Drain to Source Voltage (Vdss) :

1000V

Qualification Status :

Not Qualified

Continuous Drain Current (ID) :

700mA

Number of Terminals :

3

Transistor Element Material :

SILICON

Configuration :

SINGLE WITH BUILT-IN DIODE

Drain Current-Max (Abs) (ID) :

0.7A

Product Category :

MOSFET

Operating Temperature :

-55°C~150°C TJ

Package / Case :

TO-220-3

DS Breakdown Voltage-Min :

1000V

ECCN Code :

EAR99

Width :

4.9 mm

Factory Lead Time :

24 Weeks

FET Type :

N-Channel

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Vgs (Max) :

±30V

Height :

16.07 mm

Length :

10.36 mm

Number of Elements :

1

Surface Mount :

No

Manufacturer :

IXYS

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

FET Feature :

--

Product Type :

MOSFET

Vgs(th) (Max) @ Id :

4.5V @ 25μA

Maximum Operating Temperature :

+ 150 C

Minimum Operating Temperature :

- 55 C

Transistor Polarity :

N-Channel

Base Product Number :

IXTP05

Pin Count :

3

Rise Time :

19 ns

Power Dissipation-Max (Abs) :

25 W

Supplier Device Package :

TO-220AB

JESD-30 Code :

R-PSFM-T3

Package Shape :

RECTANGULAR

Current - Continuous Drain (Id) @ 25°C :

700mA Tc

Published :

2008

Input Capacitance (Ciss) (Max) @ Vds :

260pF @ 25V

JESD-609 Code :

e1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Finish :

TIN SILVER COPPER

Transistor Type :

1 N-Channel

Rds On (Max) @ Id, Vgs :

17 Ω @ 375mA, 10V

Reach Compliance Code :

Unknown

Additional Feature :

AVALANCHE RATED

Avalanche Energy Rating (Eas) :

100 mJ

Power Dissipation (Max) :

25W (Tc)

Drive Voltage (Max Rds On,Min Rds On) :

10V

Brand :

IXYS

RoHS Status :

ROHS3 Compliant

Case Connection :

Isolated

Pulsed Drain Current-Max (IDM) :

3A

RoHS :

Details

Pbfree Code :

yes

Drain-source On Resistance-Max :

17 Ω

Mount :

Through Hole

Power Dissipation-Max :

25W Tc

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Number of Channels :

1 Channel

Mounting Style :

Through Hole

Gate Charge (Qg) (Max) @ Vgs :

7.8nC @ 10V

Operating Mode :

ENHANCEMENT MODE

Polarity/Channel Type :

N-Channel

Channel Mode :

Enhancement

Package :

Tube

Number of Terminations :

3

Product Status :

Active