IXTP100N04T2
- Mfr.Part #
- IXTP100N04T2
- Manufacturer
- Littelfuse
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 40V 100A TO220AB
- Stock
- 8
- In Stock :
- 8
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Number of Terminations :
- 3
- FET Feature :
- --
- Brand :
- IXYS
- Transistor Type :
- 1 N-Channel
- Manufacturer :
- IXYS
- JESD-30 Code :
- R-PSFM-T3
- Series :
- TrenchT2™
- Height :
- 9.15 mm
- JEDEC-95 Code :
- TO-220AB
- Polarity/Channel Type :
- N-Channel
- Channel Mode :
- Enhancement
- Product Category :
- MOSFET
- Number of Channels :
- 1 Channel
- Additional Feature :
- AVALANCHE RATED
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Pbfree Code :
- yes
- Qualification Status :
- Not Qualified
- RoHS Status :
- ROHS3 Compliant
- Package Shape :
- RECTANGULAR
- Package :
- Tube
- Drain Current-Max (Abs) (ID) :
- 100 A
- Product Status :
- Active
- Pin Count :
- 3
- Length :
- 10.66 mm
- Mounting Type :
- Through Hole
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Product Type :
- MOSFET
- Operating Temperature :
- -55°C~175°C TJ
- Surface Mount :
- No
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Pulsed Drain Current-Max (IDM) :
- 300A
- Element Configuration :
- Single
- Operating Mode :
- ENHANCEMENT MODE
- Drain to Source Breakdown Voltage :
- 40V
- Rise Time :
- 5.2ns
- Configuration :
- Single
- Factory Lead Time :
- 24 Weeks
- Rds On (Max) @ Id, Vgs :
- 7m Ω @ 25A, 10V
- ECCN Code :
- EAR99
- Minimum Operating Temperature :
- - 55 C
- Case Connection :
- DRAIN
- Terminal Position :
- Single
- Transistor Polarity :
- N-Channel
- Number of Elements :
- 1
- Width :
- 4.83 mm
- Transistor Element Material :
- SILICON
- Terminal Form :
- THROUGH-HOLE
- JESD-609 Code :
- e3
- Published :
- 2008
- Power Dissipation (Max) :
- 150W (Tc)
- Avalanche Energy Rating (Eas) :
- 300 mJ
- Packaging :
- Tube
- Terminal Finish :
- Matte Tin (Sn)
- Mounting Style :
- Through Hole
- Number of Terminals :
- 3
- Transistor Application :
- SWITCHING
- Tradename :
- HiPerFET
- Gate Charge (Qg) (Max) @ Vgs :
- 25.5nC @ 10V
- Reach Compliance Code :
- Compliant
- FET Type :
- N-Channel
- Power Dissipation-Max :
- 150W Tc
- Gate to Source Voltage (Vgs) :
- 20V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Input Capacitance (Ciss) (Max) @ Vds :
- 2690pF @ 25V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Vgs (Max) :
- ±20V
- Power Dissipation :
- 150W
- Turn-Off Delay Time :
- 15.8 ns
- Mount :
- Through Hole
- Supplier Device Package :
- TO-220AB
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Fall Time (Typ) :
- 6.4 ns
- Power Dissipation-Max (Abs) :
- 150 W
- Drain-source On Resistance-Max :
- 0.007Ohm
- Drain to Source Voltage (Vdss) :
- 40V
- Current - Continuous Drain (Id) @ 25°C :
- 100A Tc
- DS Breakdown Voltage-Min :
- 40 V
- RoHS :
- Details
- Package / Case :
- TO-220-3
- Continuous Drain Current (ID) :
- 100A
- Base Product Number :
- IXTP100
- Maximum Operating Temperature :
- + 175 C
- Datasheets
- IXTP100N04T2
IXTP100N04T2 Documents

N-Channel Tube 7m Ω @ 25A, 10V ±20V 2690pF @ 25V 25.5nC @ 10V 40V TO-220-3
IXTP100N04T2 Overview
There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 300 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 2690pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 100A amps.In this device, the drain-source breakdown voltage is 40V and VGS=40V, so the drain-source breakdown voltage is 40V in this case.A device can conduct a maximum continuous current of [100 A] according to its drain current.It is [15.8 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 300A.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.The DS breakdown voltage should be maintained above 40 V to maintain normal operation.To operate this transistor, you will need a 40V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).
IXTP100N04T2 Features
the avalanche energy rating (Eas) is 300 mJ
a continuous drain current (ID) of 100A
a drain-to-source breakdown voltage of 40V voltage
the turn-off delay time is 15.8 ns
based on its rated peak drain current 300A.
a 40V drain to source voltage (Vdss)
IXTP100N04T2 Applications
There are a lot of IXYS
IXTP100N04T2 applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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