IXTP100N04T2

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Mfr.Part #
IXTP100N04T2
Manufacturer
Littelfuse
Package / Case
TO-220-3
Datasheet
Download
Description
MOSFET N-CH 40V 100A TO220AB
Stock
8
In Stock :
8

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Pin Count :
3
Gate to Source Voltage (Vgs) :
20V
Operating Mode :
ENHANCEMENT MODE
Transistor Polarity :
N-Channel
Mounting Style :
Through Hole
Transistor Type :
1 N-Channel
Configuration :
Single
Polarity/Channel Type :
N-Channel
Number of Elements :
1
Continuous Drain Current (ID) :
100A
Drain to Source Voltage (Vdss) :
40V
Series :
TrenchT2™
FET Feature :
--
Length :
10.66 mm
Terminal Position :
Single
Base Product Number :
IXTP100
Supplier Device Package :
TO-220AB
Maximum Operating Temperature :
+ 175 C
DS Breakdown Voltage-Min :
40 V
Rds On (Max) @ Id, Vgs :
7m Ω @ 25A, 10V
Package / Case :
TO-220-3
Terminal Finish :
Matte Tin (Sn)
Height :
9.15 mm
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Drive Voltage (Max Rds On,Min Rds On) :
10V
Additional Feature :
AVALANCHE RATED
Rise Time :
5.2ns
Width :
4.83 mm
Vgs(th) (Max) @ Id :
4V @ 250µA
Product Category :
MOSFET
Power Dissipation-Max :
150W Tc
Power Dissipation (Max) :
150W (Tc)
Drain Current-Max (Abs) (ID) :
100 A
Mounting Type :
Through Hole
Product Status :
Active
Reach Compliance Code :
Compliant
Surface Mount :
No
Power Dissipation :
150W
Vgs (Max) :
±20V
Number of Channels :
1 Channel
Number of Terminals :
3
Element Configuration :
Single
Pulsed Drain Current-Max (IDM) :
300A
Package Shape :
RECTANGULAR
Qualification Status :
Not Qualified
Tradename :
HiPerFET
Fall Time (Typ) :
6.4 ns
Packaging :
Tube
FET Technology :
METAL-OXIDE SEMICONDUCTOR
JESD-609 Code :
e3
RoHS :
Details
Drain to Source Breakdown Voltage :
40V
Mount :
Through Hole
Power Dissipation-Max (Abs) :
150 W
Manufacturer :
IXYS
Minimum Operating Temperature :
- 55 C
JESD-30 Code :
R-PSFM-T3
Published :
2008
Product Type :
MOSFET
Number of Terminations :
3
Avalanche Energy Rating (Eas) :
300 mJ
Gate Charge (Qg) (Max) @ Vgs :
25.5nC @ 10V
Transistor Element Material :
SILICON
Current - Continuous Drain (Id) @ 25°C :
100A Tc
Case Connection :
DRAIN
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Pbfree Code :
yes
Operating Temperature :
-55°C~175°C TJ
FET Type :
N-Channel
Brand :
IXYS
Turn-Off Delay Time :
15.8 ns
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Input Capacitance (Ciss) (Max) @ Vds :
2690pF @ 25V
JEDEC-95 Code :
TO-220AB
ECCN Code :
EAR99
Channel Mode :
Enhancement
Drain-source On Resistance-Max :
0.007Ohm
RoHS Status :
ROHS3 Compliant
Terminal Form :
THROUGH-HOLE
Factory Lead Time :
24 Weeks
Transistor Application :
SWITCHING
Package :
Tube
Datasheets
IXTP100N04T2
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTP100N04T2 from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-220-3, Mounting Type:Through Hole, Number of Channels:1 Channel, Number of Terminations:3, Operating Temperature:-55°C~175°C TJ, IXTP100N04T2 pinout, IXTP100N04T2 datasheet PDF, IXTP100N04T2 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTP100N04T2 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTP100N04T2


N-Channel Tube 7m Ω @ 25A, 10V ±20V 2690pF @ 25V 25.5nC @ 10V 40V TO-220-3

IXTP100N04T2 Overview


There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 300 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 2690pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 100A amps.In this device, the drain-source breakdown voltage is 40V and VGS=40V, so the drain-source breakdown voltage is 40V in this case.A device can conduct a maximum continuous current of [100 A] according to its drain current.It is [15.8 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 300A.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.The DS breakdown voltage should be maintained above 40 V to maintain normal operation.To operate this transistor, you will need a 40V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).

IXTP100N04T2 Features


the avalanche energy rating (Eas) is 300 mJ
a continuous drain current (ID) of 100A
a drain-to-source breakdown voltage of 40V voltage
the turn-off delay time is 15.8 ns
based on its rated peak drain current 300A.
a 40V drain to source voltage (Vdss)


IXTP100N04T2 Applications


There are a lot of IXYS
IXTP100N04T2 applications of single MOSFETs transistors.


  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
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