IXTP100N04T2

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Mfr.Part #
IXTP100N04T2
Manufacturer
Littelfuse
Package / Case
TO-220-3
Datasheet
Download
Description
MOSFET N-CH 40V 100A TO220AB
Stock
8
In Stock :
8

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Continuous Drain Current (ID) :
100A
Transistor Polarity :
N-Channel
RoHS Status :
ROHS3 Compliant
Terminal Position :
Single
Gate Charge (Qg) (Max) @ Vgs :
25.5nC @ 10V
Channel Mode :
Enhancement
Qualification Status :
Not Qualified
Brand :
IXYS
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Supplier Device Package :
TO-220AB
Avalanche Energy Rating (Eas) :
300 mJ
Power Dissipation-Max (Abs) :
150 W
Number of Elements :
1
Mount :
Through Hole
Turn-Off Delay Time :
15.8 ns
Current - Continuous Drain (Id) @ 25°C :
100A Tc
Terminal Form :
THROUGH-HOLE
Element Configuration :
Single
Published :
2008
Polarity/Channel Type :
N-Channel
DS Breakdown Voltage-Min :
40 V
Power Dissipation (Max) :
150W (Tc)
Base Product Number :
IXTP100
Rds On (Max) @ Id, Vgs :
7m Ω @ 25A, 10V
Manufacturer :
IXYS
Packaging :
Tube
JESD-609 Code :
e3
Package / Case :
TO-220-3
FET Type :
N-Channel
Package Shape :
RECTANGULAR
Gate to Source Voltage (Vgs) :
20V
Number of Channels :
1 Channel
RoHS :
Details
Maximum Operating Temperature :
+ 175 C
Mounting Style :
Through Hole
Factory Lead Time :
24 Weeks
ECCN Code :
EAR99
Operating Mode :
ENHANCEMENT MODE
Case Connection :
DRAIN
Operating Temperature :
-55°C~175°C TJ
Number of Terminations :
3
Drive Voltage (Max Rds On,Min Rds On) :
10V
Pin Count :
3
Fall Time (Typ) :
6.4 ns
Power Dissipation :
150W
Product Category :
MOSFET
Pulsed Drain Current-Max (IDM) :
300A
Rise Time :
5.2ns
Drain Current-Max (Abs) (ID) :
100 A
Configuration :
Single
Transistor Element Material :
SILICON
Drain to Source Breakdown Voltage :
40V
Additional Feature :
AVALANCHE RATED
Pbfree Code :
yes
JEDEC-95 Code :
TO-220AB
Surface Mount :
No
Series :
TrenchT2™
Height :
9.15 mm
Tradename :
HiPerFET
Drain to Source Voltage (Vdss) :
40V
Package :
Tube
Transistor Type :
1 N-Channel
Mounting Type :
Through Hole
JESD-30 Code :
R-PSFM-T3
Minimum Operating Temperature :
- 55 C
Product Status :
Active
Input Capacitance (Ciss) (Max) @ Vds :
2690pF @ 25V
Vgs (Max) :
±20V
Transistor Application :
SWITCHING
Product Type :
MOSFET
Power Dissipation-Max :
150W Tc
Number of Terminals :
3
Drain-source On Resistance-Max :
0.007Ohm
FET Feature :
--
Vgs(th) (Max) @ Id :
4V @ 250µA
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Reach Compliance Code :
Compliant
Length :
10.66 mm
Terminal Finish :
Matte Tin (Sn)
Width :
4.83 mm
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTP100N04T2 from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-220-3, Number of Channels:1 Channel, Operating Temperature:-55°C~175°C TJ, Number of Terminations:3, Mounting Type:Through Hole, IXTP100N04T2 pinout, IXTP100N04T2 datasheet PDF, IXTP100N04T2 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTP100N04T2 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTP100N04T2


N-Channel Tube 7m Ω @ 25A, 10V ±20V 2690pF @ 25V 25.5nC @ 10V 40V TO-220-3

IXTP100N04T2 Overview


There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 300 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 2690pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 100A amps.In this device, the drain-source breakdown voltage is 40V and VGS=40V, so the drain-source breakdown voltage is 40V in this case.A device can conduct a maximum continuous current of [100 A] according to its drain current.It is [15.8 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 300A.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.The DS breakdown voltage should be maintained above 40 V to maintain normal operation.To operate this transistor, you will need a 40V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).

IXTP100N04T2 Features


the avalanche energy rating (Eas) is 300 mJ
a continuous drain current (ID) of 100A
a drain-to-source breakdown voltage of 40V voltage
the turn-off delay time is 15.8 ns
based on its rated peak drain current 300A.
a 40V drain to source voltage (Vdss)


IXTP100N04T2 Applications


There are a lot of IXYS
IXTP100N04T2 applications of single MOSFETs transistors.


  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
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