IXTP100N04T2
- Mfr.Part #
- IXTP100N04T2
- Manufacturer
- Littelfuse
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 40V 100A TO220AB
- Stock
- 8
- In Stock :
- 8
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Pin Count :
- 3
- Gate to Source Voltage (Vgs) :
- 20V
- Operating Mode :
- ENHANCEMENT MODE
- Transistor Polarity :
- N-Channel
- Mounting Style :
- Through Hole
- Transistor Type :
- 1 N-Channel
- Configuration :
- Single
- Polarity/Channel Type :
- N-Channel
- Number of Elements :
- 1
- Continuous Drain Current (ID) :
- 100A
- Drain to Source Voltage (Vdss) :
- 40V
- Series :
- TrenchT2™
- FET Feature :
- --
- Length :
- 10.66 mm
- Terminal Position :
- Single
- Base Product Number :
- IXTP100
- Supplier Device Package :
- TO-220AB
- Maximum Operating Temperature :
- + 175 C
- DS Breakdown Voltage-Min :
- 40 V
- Rds On (Max) @ Id, Vgs :
- 7m Ω @ 25A, 10V
- Package / Case :
- TO-220-3
- Terminal Finish :
- Matte Tin (Sn)
- Height :
- 9.15 mm
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Additional Feature :
- AVALANCHE RATED
- Rise Time :
- 5.2ns
- Width :
- 4.83 mm
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Product Category :
- MOSFET
- Power Dissipation-Max :
- 150W Tc
- Power Dissipation (Max) :
- 150W (Tc)
- Drain Current-Max (Abs) (ID) :
- 100 A
- Mounting Type :
- Through Hole
- Product Status :
- Active
- Reach Compliance Code :
- Compliant
- Surface Mount :
- No
- Power Dissipation :
- 150W
- Vgs (Max) :
- ±20V
- Number of Channels :
- 1 Channel
- Number of Terminals :
- 3
- Element Configuration :
- Single
- Pulsed Drain Current-Max (IDM) :
- 300A
- Package Shape :
- RECTANGULAR
- Qualification Status :
- Not Qualified
- Tradename :
- HiPerFET
- Fall Time (Typ) :
- 6.4 ns
- Packaging :
- Tube
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- JESD-609 Code :
- e3
- RoHS :
- Details
- Drain to Source Breakdown Voltage :
- 40V
- Mount :
- Through Hole
- Power Dissipation-Max (Abs) :
- 150 W
- Manufacturer :
- IXYS
- Minimum Operating Temperature :
- - 55 C
- JESD-30 Code :
- R-PSFM-T3
- Published :
- 2008
- Product Type :
- MOSFET
- Number of Terminations :
- 3
- Avalanche Energy Rating (Eas) :
- 300 mJ
- Gate Charge (Qg) (Max) @ Vgs :
- 25.5nC @ 10V
- Transistor Element Material :
- SILICON
- Current - Continuous Drain (Id) @ 25°C :
- 100A Tc
- Case Connection :
- DRAIN
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pbfree Code :
- yes
- Operating Temperature :
- -55°C~175°C TJ
- FET Type :
- N-Channel
- Brand :
- IXYS
- Turn-Off Delay Time :
- 15.8 ns
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Input Capacitance (Ciss) (Max) @ Vds :
- 2690pF @ 25V
- JEDEC-95 Code :
- TO-220AB
- ECCN Code :
- EAR99
- Channel Mode :
- Enhancement
- Drain-source On Resistance-Max :
- 0.007Ohm
- RoHS Status :
- ROHS3 Compliant
- Terminal Form :
- THROUGH-HOLE
- Factory Lead Time :
- 24 Weeks
- Transistor Application :
- SWITCHING
- Package :
- Tube
- Datasheets
- IXTP100N04T2

N-Channel Tube 7m Ω @ 25A, 10V ±20V 2690pF @ 25V 25.5nC @ 10V 40V TO-220-3
IXTP100N04T2 Overview
There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 300 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 2690pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 100A amps.In this device, the drain-source breakdown voltage is 40V and VGS=40V, so the drain-source breakdown voltage is 40V in this case.A device can conduct a maximum continuous current of [100 A] according to its drain current.It is [15.8 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 300A.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.The DS breakdown voltage should be maintained above 40 V to maintain normal operation.To operate this transistor, you will need a 40V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).
IXTP100N04T2 Features
the avalanche energy rating (Eas) is 300 mJ
a continuous drain current (ID) of 100A
a drain-to-source breakdown voltage of 40V voltage
the turn-off delay time is 15.8 ns
based on its rated peak drain current 300A.
a 40V drain to source voltage (Vdss)
IXTP100N04T2 Applications
There are a lot of IXYS
IXTP100N04T2 applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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