IXTP100N04T2
- Mfr.Part #
- IXTP100N04T2
- Manufacturer
- Littelfuse
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 40V 100A TO220AB
- Stock
- 8
- In Stock :
- 8
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Element Configuration :
- Single
- Minimum Operating Temperature :
- - 55 C
- Number of Terminals :
- 3
- Number of Channels :
- 1 Channel
- Drain to Source Breakdown Voltage :
- 40V
- Current - Continuous Drain (Id) @ 25°C :
- 100A Tc
- Number of Elements :
- 1
- Input Capacitance (Ciss) (Max) @ Vds :
- 2690pF @ 25V
- Number of Terminations :
- 3
- Manufacturer :
- IXYS
- FET Feature :
- --
- Channel Mode :
- Enhancement
- Power Dissipation-Max :
- 150W Tc
- JESD-30 Code :
- R-PSFM-T3
- Package / Case :
- TO-220-3
- Additional Feature :
- AVALANCHE RATED
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Operating Mode :
- ENHANCEMENT MODE
- Continuous Drain Current (ID) :
- 100A
- Case Connection :
- DRAIN
- Avalanche Energy Rating (Eas) :
- 300 mJ
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Transistor Polarity :
- N-Channel
- JEDEC-95 Code :
- TO-220AB
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- JESD-609 Code :
- e3
- Drain Current-Max (Abs) (ID) :
- 100 A
- Published :
- 2008
- Transistor Type :
- 1 N-Channel
- RoHS Status :
- ROHS3 Compliant
- Power Dissipation (Max) :
- 150W (Tc)
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Power Dissipation :
- 150W
- Drain-source On Resistance-Max :
- 0.007Ohm
- Package :
- Tube
- Surface Mount :
- No
- RoHS :
- Details
- ECCN Code :
- EAR99
- Product Type :
- MOSFET
- Vgs (Max) :
- ±20V
- Configuration :
- Single
- Gate Charge (Qg) (Max) @ Vgs :
- 25.5nC @ 10V
- Polarity/Channel Type :
- N-Channel
- Packaging :
- Tube
- Mount :
- Through Hole
- Height :
- 9.15 mm
- Reach Compliance Code :
- Compliant
- Pin Count :
- 3
- DS Breakdown Voltage-Min :
- 40 V
- Pulsed Drain Current-Max (IDM) :
- 300A
- Supplier Device Package :
- TO-220AB
- Tradename :
- HiPerFET
- Transistor Element Material :
- SILICON
- Terminal Finish :
- Matte Tin (Sn)
- Base Product Number :
- IXTP100
- Drain to Source Voltage (Vdss) :
- 40V
- Product Status :
- Active
- Qualification Status :
- Not Qualified
- Pbfree Code :
- yes
- Operating Temperature :
- -55°C~175°C TJ
- Power Dissipation-Max (Abs) :
- 150 W
- Mounting Style :
- Through Hole
- Terminal Position :
- Single
- Transistor Application :
- SWITCHING
- Package Shape :
- RECTANGULAR
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Length :
- 10.66 mm
- FET Type :
- N-Channel
- Factory Lead Time :
- 24 Weeks
- Turn-Off Delay Time :
- 15.8 ns
- Width :
- 4.83 mm
- Maximum Operating Temperature :
- + 175 C
- Product Category :
- MOSFET
- Terminal Form :
- THROUGH-HOLE
- Brand :
- IXYS
- Series :
- TrenchT2™
- Fall Time (Typ) :
- 6.4 ns
- Rise Time :
- 5.2ns
- Mounting Type :
- Through Hole
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Gate to Source Voltage (Vgs) :
- 20V
- Rds On (Max) @ Id, Vgs :
- 7m Ω @ 25A, 10V
- Datasheets
- IXTP100N04T2
IXTP100N04T2 Documents

N-Channel Tube 7m Ω @ 25A, 10V ±20V 2690pF @ 25V 25.5nC @ 10V 40V TO-220-3
IXTP100N04T2 Overview
There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 300 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 2690pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 100A amps.In this device, the drain-source breakdown voltage is 40V and VGS=40V, so the drain-source breakdown voltage is 40V in this case.A device can conduct a maximum continuous current of [100 A] according to its drain current.It is [15.8 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 300A.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.The DS breakdown voltage should be maintained above 40 V to maintain normal operation.To operate this transistor, you will need a 40V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).
IXTP100N04T2 Features
the avalanche energy rating (Eas) is 300 mJ
a continuous drain current (ID) of 100A
a drain-to-source breakdown voltage of 40V voltage
the turn-off delay time is 15.8 ns
based on its rated peak drain current 300A.
a 40V drain to source voltage (Vdss)
IXTP100N04T2 Applications
There are a lot of IXYS
IXTP100N04T2 applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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