IXTP100N04T2

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Package Shape :

RECTANGULAR

Continuous Drain Current (ID) :

100A

Product Type :

MOSFET

Pbfree Code :

yes

Pulsed Drain Current-Max (IDM) :

300A

Mounting Type :

Through Hole

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Width :

4.83 mm

Transistor Type :

1 N-Channel

Brand :

IXYS

Surface Mount :

No

Case Connection :

DRAIN

Tradename :

HiPerFET

Power Dissipation :

150W

Mount :

Through Hole

Transistor Application :

SWITCHING

Mounting Style :

Through Hole

JESD-30 Code :

R-PSFM-T3

Qualification Status :

Not Qualified

Length :

10.66 mm

Gate Charge (Qg) (Max) @ Vgs :

25.5nC @ 10V

Packaging :

Tube

Terminal Finish :

Matte Tin (Sn)

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Terminations :

3

Terminal Form :

THROUGH-HOLE

Manufacturer :

IXYS

Drain to Source Breakdown Voltage :

40V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Terminals :

3

Height :

9.15 mm

Factory Lead Time :

24 Weeks

Input Capacitance (Ciss) (Max) @ Vds :

2690pF @ 25V

Number of Channels :

1 Channel

JEDEC-95 Code :

TO-220AB

Operating Mode :

ENHANCEMENT MODE

Fall Time (Typ) :

6.4 ns

Maximum Operating Temperature :

+ 175 C

RoHS :

Details

Published :

2008

Product Status :

Active

Element Configuration :

Single

Minimum Operating Temperature :

- 55 C

ECCN Code :

EAR99

Current - Continuous Drain (Id) @ 25°C :

100A Tc

Additional Feature :

AVALANCHE RATED

Reach Compliance Code :

Compliant

Power Dissipation (Max) :

150W (Tc)

Vgs (Max) :

±20V

Transistor Polarity :

N-Channel

Drain to Source Voltage (Vdss) :

40V

Base Product Number :

IXTP100

Vgs(th) (Max) @ Id :

4V @ 250µA

FET Type :

N-Channel

Number of Elements :

1

RoHS Status :

ROHS3 Compliant

Package / Case :

TO-220-3

Rise Time :

5.2ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Product Category :

MOSFET

Polarity/Channel Type :

N-Channel

Power Dissipation-Max :

150W Tc

Pin Count :

3

FET Feature :

--

JESD-609 Code :

e3

Turn-Off Delay Time :

15.8 ns

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Package :

Tube

Operating Temperature :

-55°C~175°C TJ

Gate to Source Voltage (Vgs) :

20V

Transistor Element Material :

SILICON

Rds On (Max) @ Id, Vgs :

7m Ω @ 25A, 10V

DS Breakdown Voltage-Min :

40 V

Power Dissipation-Max (Abs) :

150 W

Drain-source On Resistance-Max :

0.007Ohm

Configuration :

Single

Drain Current-Max (Abs) (ID) :

100 A

Avalanche Energy Rating (Eas) :

300 mJ

Terminal Position :

Single

Supplier Device Package :

TO-220AB

Channel Mode :

Enhancement

Series :

TrenchT2™