IXTP100N04T2

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Mfr.Part #
IXTP100N04T2
Manufacturer
Littelfuse
Package / Case
TO-220-3
Datasheet
Download
Description
MOSFET N-CH 40V 100A TO220AB
Stock
8
In Stock :
8

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Drain Current-Max (Abs) (ID) :
100 A
FET Type :
N-Channel
Reach Compliance Code :
Compliant
Drain-source On Resistance-Max :
0.007Ohm
Factory Lead Time :
24 Weeks
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Package :
Tube
JEDEC-95 Code :
TO-220AB
Number of Terminations :
3
Series :
TrenchT2™
Configuration :
Single
Pulsed Drain Current-Max (IDM) :
300A
Surface Mount :
No
Power Dissipation (Max) :
150W (Tc)
Supplier Device Package :
TO-220AB
Qualification Status :
Not Qualified
Number of Channels :
1 Channel
Published :
2008
Terminal Position :
Single
Mount :
Through Hole
Input Capacitance (Ciss) (Max) @ Vds :
2690pF @ 25V
Polarity/Channel Type :
N-Channel
RoHS :
Details
Manufacturer :
IXYS
Tradename :
HiPerFET
Vgs(th) (Max) @ Id :
4V @ 250µA
DS Breakdown Voltage-Min :
40 V
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Transistor Type :
1 N-Channel
Power Dissipation-Max :
150W Tc
Vgs (Max) :
±20V
Base Product Number :
IXTP100
Terminal Finish :
Matte Tin (Sn)
Number of Terminals :
3
Packaging :
Tube
Gate to Source Voltage (Vgs) :
20V
Current - Continuous Drain (Id) @ 25°C :
100A Tc
Transistor Polarity :
N-Channel
Drive Voltage (Max Rds On,Min Rds On) :
10V
Turn-Off Delay Time :
15.8 ns
Transistor Application :
SWITCHING
Width :
4.83 mm
Pin Count :
3
JESD-609 Code :
e3
Rds On (Max) @ Id, Vgs :
7m Ω @ 25A, 10V
Minimum Operating Temperature :
- 55 C
Power Dissipation :
150W
Power Dissipation-Max (Abs) :
150 W
Drain to Source Voltage (Vdss) :
40V
RoHS Status :
ROHS3 Compliant
Case Connection :
DRAIN
Terminal Form :
THROUGH-HOLE
Continuous Drain Current (ID) :
100A
Length :
10.66 mm
Element Configuration :
Single
Mounting Style :
Through Hole
Operating Temperature :
-55°C~175°C TJ
Maximum Operating Temperature :
+ 175 C
Package Shape :
RECTANGULAR
Operating Mode :
ENHANCEMENT MODE
JESD-30 Code :
R-PSFM-T3
Brand :
IXYS
Drain to Source Breakdown Voltage :
40V
Product Type :
MOSFET
Height :
9.15 mm
Rise Time :
5.2ns
FET Feature :
--
Pbfree Code :
yes
Channel Mode :
Enhancement
Fall Time (Typ) :
6.4 ns
Product Status :
Active
ECCN Code :
EAR99
Additional Feature :
AVALANCHE RATED
Avalanche Energy Rating (Eas) :
300 mJ
Transistor Element Material :
SILICON
Product Category :
MOSFET
Mounting Type :
Through Hole
Gate Charge (Qg) (Max) @ Vgs :
25.5nC @ 10V
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Number of Elements :
1
Package / Case :
TO-220-3
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTP100N04T2 from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Number of Channels:1 Channel, Operating Temperature:-55°C~175°C TJ, Mounting Type:Through Hole, Package / Case:TO-220-3, IXTP100N04T2 pinout, IXTP100N04T2 datasheet PDF, IXTP100N04T2 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTP100N04T2 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTP100N04T2


N-Channel Tube 7m Ω @ 25A, 10V ±20V 2690pF @ 25V 25.5nC @ 10V 40V TO-220-3

IXTP100N04T2 Overview


There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 300 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 2690pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 100A amps.In this device, the drain-source breakdown voltage is 40V and VGS=40V, so the drain-source breakdown voltage is 40V in this case.A device can conduct a maximum continuous current of [100 A] according to its drain current.It is [15.8 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 300A.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.The DS breakdown voltage should be maintained above 40 V to maintain normal operation.To operate this transistor, you will need a 40V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).

IXTP100N04T2 Features


the avalanche energy rating (Eas) is 300 mJ
a continuous drain current (ID) of 100A
a drain-to-source breakdown voltage of 40V voltage
the turn-off delay time is 15.8 ns
based on its rated peak drain current 300A.
a 40V drain to source voltage (Vdss)


IXTP100N04T2 Applications


There are a lot of IXYS
IXTP100N04T2 applications of single MOSFETs transistors.


  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
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