IXTP08N120P

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Mfr.Part #
IXTP08N120P
Manufacturer
Littelfuse
Package / Case
TO-220-3
Datasheet
Download
Description
MOSFET N-CH 1200V 800MA TO220AB
Stock
47,056
In Stock :
47,056

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Terminal Position :
Single
Package / Case :
TO-220-3
RoHS :
Details
Gate Charge (Qg) (Max) @ Vgs :
14nC @ 10V
Drain Current-Max (Abs) (ID) :
0.8A
DS Breakdown Voltage-Min :
1200V
Minimum Operating Temperature :
- 55 C
Package Shape :
RECTANGULAR
Manufacturer :
IXYS
Mounting Style :
Through Hole
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
RoHS Status :
ROHS3 Compliant
Input Capacitance (Ciss) (Max) @ Vds :
333pF @ 25V
Pbfree Code :
yes
Pulsed Drain Current-Max (IDM) :
1.8A
Transistor Application :
SWITCHING
Continuous Drain Current (ID) :
800mA
Maximum Operating Temperature :
+ 150 C
Current - Continuous Drain (Id) @ 25°C :
800mA Tc
Reach Compliance Code :
Compliant
Pin Count :
3
Lead Free :
Lead Free
Surface Mount :
No
ECCN Code :
EAR99
Avalanche Energy Rating (Eas) :
80 mJ
FET Feature :
--
Height :
9.15 mm
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Rds On (Max) @ Id, Vgs :
25 Ω @ 500mA, 10V
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Transistor Element Material :
SILICON
Number of Terminals :
3
Configuration :
SINGLE WITH BUILT-IN DIODE
Additional Feature :
AVALANCHE RATED
Number of Elements :
1
Qualification Status :
Not Qualified
JESD-609 Code :
e1
Mount :
Through Hole
Terminal Form :
THROUGH-HOLE
Operating Temperature :
-55°C~150°C TJ
Case Connection :
DRAIN
Drain to Source Voltage (Vdss) :
1200V
Transistor Polarity :
N-Channel
Product Status :
Active
Polarity/Channel Type :
N-Channel
Product Type :
MOSFET
Base Product Number :
IXTP08
Width :
4.83 mm
Length :
10.66 mm
Product Category :
MOSFET
Series :
Polar™
Vgs(th) (Max) @ Id :
4.5V @ 50μA
Number of Pins :
3
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Packaging :
Tube
Drive Voltage (Max Rds On,Min Rds On) :
10V
Factory Lead Time :
24 Weeks
Drain-source On Resistance-Max :
25 Ω
Package :
Tube
Rise Time :
26 ns
Transistor Type :
1 N-Channel
Channel Mode :
Enhancement
Operating Mode :
ENHANCEMENT MODE
Published :
2008
JESD-30 Code :
R-PSFM-T3
Number of Channels :
1 Channel
JEDEC-95 Code :
TO-220AB
Number of Terminations :
3
Power Dissipation-Max :
50W Tc
Power Dissipation-Max (Abs) :
50 W
FET Type :
N-Channel
Brand :
IXYS
Power Dissipation (Max) :
50W (Tc)
Supplier Device Package :
TO-220AB
Vgs (Max) :
±20V
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Mounting Type :
Through Hole
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTP08N120P from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-220-3, Operating Temperature:-55°C~150°C TJ, Number of Pins:3, Number of Channels:1 Channel, Number of Terminations:3, Mounting Type:Through Hole, IXTP08N120P pinout, IXTP08N120P datasheet PDF, IXTP08N120P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTP08N120P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTP08N120P


N-Channel Tube 25 Ω @ 500mA, 10V ±20V 333pF @ 25V 14nC @ 10V 1200V TO-220-3

IXTP08N120P Overview


Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 80 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 333pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 800mA.0.8A is the drain current of this device, which is the maximum continuous current transistor can carry.Peak drain current for this device is 1.8A, which is its maximum pulsed drain current.To maintain normal operation, the DS breakdown voltage should be kept above 1200V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 1200V.Using drive voltage (10V) reduces this device's overall power consumption.

IXTP08N120P Features


the avalanche energy rating (Eas) is 80 mJ
a continuous drain current (ID) of 800mA
based on its rated peak drain current 1.8A.
a 1200V drain to source voltage (Vdss)


IXTP08N120P Applications


There are a lot of IXYS
IXTP08N120P applications of single MOSFETs transistors.


  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
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