IXTP08N120P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Temperature :

-55°C~150°C TJ

DS Breakdown Voltage-Min :

1200V

Transistor Application :

SWITCHING

Current - Continuous Drain (Id) @ 25°C :

800mA Tc

Package / Case :

TO-220-3

Brand :

IXYS

RoHS :

Details

ECCN Code :

EAR99

Product Status :

Active

Transistor Polarity :

N-Channel

Drain to Source Voltage (Vdss) :

1200V

Power Dissipation-Max :

50W Tc

Vgs(th) (Max) @ Id :

4.5V @ 50μA

Product Type :

MOSFET

JESD-30 Code :

R-PSFM-T3

JEDEC-95 Code :

TO-220AB

Lead Free :

Lead Free

Pin Count :

3

Number of Channels :

1 Channel

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Minimum Operating Temperature :

- 55 C

Input Capacitance (Ciss) (Max) @ Vds :

333pF @ 25V

Package :

Tube

Number of Terminals :

3

Pbfree Code :

yes

Product Category :

MOSFET

FET Feature :

--

Terminal Position :

Single

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Vgs (Max) :

±20V

Terminal Form :

THROUGH-HOLE

Length :

10.66 mm

Channel Mode :

Enhancement

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Maximum Operating Temperature :

+ 150 C

Rise Time :

26 ns

FET Type :

N-Channel

Number of Elements :

1

Factory Lead Time :

24 Weeks

Operating Mode :

ENHANCEMENT MODE

Series :

Polar™

Drive Voltage (Max Rds On,Min Rds On) :

10V

Supplier Device Package :

TO-220AB

Continuous Drain Current (ID) :

800mA

Mount :

Through Hole

Width :

4.83 mm

Number of Pins :

3

Power Dissipation (Max) :

50W (Tc)

Drain-source On Resistance-Max :

25 Ω

Surface Mount :

No

Height :

9.15 mm

Number of Terminations :

3

Published :

2008

Reach Compliance Code :

Compliant

Manufacturer :

IXYS

Rds On (Max) @ Id, Vgs :

25 Ω @ 500mA, 10V

Pulsed Drain Current-Max (IDM) :

1.8A

Avalanche Energy Rating (Eas) :

80 mJ

Transistor Type :

1 N-Channel

Polarity/Channel Type :

N-Channel

JESD-609 Code :

e1

Case Connection :

DRAIN

Base Product Number :

IXTP08

Mounting Style :

Through Hole

Additional Feature :

AVALANCHE RATED

Qualification Status :

Not Qualified

Gate Charge (Qg) (Max) @ Vgs :

14nC @ 10V

Mounting Type :

Through Hole

Drain Current-Max (Abs) (ID) :

0.8A

Configuration :

SINGLE WITH BUILT-IN DIODE

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Packaging :

Tube

Package Shape :

RECTANGULAR

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation-Max (Abs) :

50 W

RoHS Status :

ROHS3 Compliant