IXTP08N120P

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Mfr.Part #
IXTP08N120P
Manufacturer
Littelfuse
Package / Case
TO-220-3
Datasheet
Download
Description
MOSFET N-CH 1200V 800MA TO220AB
Stock
47,056
In Stock :
47,056

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Additional Feature :
AVALANCHE RATED
Series :
Polar™
Rds On (Max) @ Id, Vgs :
25 Ω @ 500mA, 10V
Drain-source On Resistance-Max :
25 Ω
Gate Charge (Qg) (Max) @ Vgs :
14nC @ 10V
Package / Case :
TO-220-3
JESD-30 Code :
R-PSFM-T3
Number of Terminals :
3
RoHS Status :
ROHS3 Compliant
Vgs(th) (Max) @ Id :
4.5V @ 50μA
JEDEC-95 Code :
TO-220AB
Configuration :
SINGLE WITH BUILT-IN DIODE
Avalanche Energy Rating (Eas) :
80 mJ
Package Shape :
RECTANGULAR
Polarity/Channel Type :
N-Channel
Pulsed Drain Current-Max (IDM) :
1.8A
Channel Mode :
Enhancement
Mount :
Through Hole
Continuous Drain Current (ID) :
800mA
Product Category :
MOSFET
Packaging :
Tube
JESD-609 Code :
e1
Minimum Operating Temperature :
- 55 C
Vgs (Max) :
±20V
ECCN Code :
EAR99
Pbfree Code :
yes
Transistor Type :
1 N-Channel
Power Dissipation (Max) :
50W (Tc)
Transistor Application :
SWITCHING
FET Feature :
--
Lead Free :
Lead Free
Number of Elements :
1
Product Type :
MOSFET
Height :
9.15 mm
Qualification Status :
Not Qualified
Operating Mode :
ENHANCEMENT MODE
Factory Lead Time :
24 Weeks
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Manufacturer :
IXYS
Rise Time :
26 ns
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Power Dissipation-Max :
50W Tc
Reach Compliance Code :
Compliant
Length :
10.66 mm
Transistor Element Material :
SILICON
Drive Voltage (Max Rds On,Min Rds On) :
10V
Width :
4.83 mm
Drain Current-Max (Abs) (ID) :
0.8A
Drain to Source Voltage (Vdss) :
1200V
Number of Pins :
3
Input Capacitance (Ciss) (Max) @ Vds :
333pF @ 25V
Maximum Operating Temperature :
+ 150 C
Brand :
IXYS
RoHS :
Details
Current - Continuous Drain (Id) @ 25°C :
800mA Tc
Base Product Number :
IXTP08
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Published :
2008
Package :
Tube
Number of Channels :
1 Channel
Surface Mount :
No
Terminal Form :
THROUGH-HOLE
Terminal Position :
Single
Pin Count :
3
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
FET Type :
N-Channel
Product Status :
Active
Transistor Polarity :
N-Channel
Mounting Style :
Through Hole
DS Breakdown Voltage-Min :
1200V
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Power Dissipation-Max (Abs) :
50 W
Supplier Device Package :
TO-220AB
Operating Temperature :
-55°C~150°C TJ
Number of Terminations :
3
Mounting Type :
Through Hole
Case Connection :
DRAIN
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTP08N120P from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-220-3, Number of Pins:3, Number of Channels:1 Channel, Operating Temperature:-55°C~150°C TJ, Number of Terminations:3, Mounting Type:Through Hole, IXTP08N120P pinout, IXTP08N120P datasheet PDF, IXTP08N120P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTP08N120P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTP08N120P


N-Channel Tube 25 Ω @ 500mA, 10V ±20V 333pF @ 25V 14nC @ 10V 1200V TO-220-3

IXTP08N120P Overview


Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 80 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 333pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 800mA.0.8A is the drain current of this device, which is the maximum continuous current transistor can carry.Peak drain current for this device is 1.8A, which is its maximum pulsed drain current.To maintain normal operation, the DS breakdown voltage should be kept above 1200V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 1200V.Using drive voltage (10V) reduces this device's overall power consumption.

IXTP08N120P Features


the avalanche energy rating (Eas) is 80 mJ
a continuous drain current (ID) of 800mA
based on its rated peak drain current 1.8A.
a 1200V drain to source voltage (Vdss)


IXTP08N120P Applications


There are a lot of IXYS
IXTP08N120P applications of single MOSFETs transistors.


  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
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