IXTP08N120P

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Mfr.Part #
IXTP08N120P
Manufacturer
Littelfuse
Package / Case
TO-220-3
Datasheet
Download
Description
MOSFET N-CH 1200V 800MA TO220AB
Stock
47,056
In Stock :
47,056

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Width :
4.83 mm
Manufacturer :
IXYS
JESD-30 Code :
R-PSFM-T3
Rds On (Max) @ Id, Vgs :
25 Ω @ 500mA, 10V
Power Dissipation (Max) :
50W (Tc)
Surface Mount :
No
DS Breakdown Voltage-Min :
1200V
Drain to Source Voltage (Vdss) :
1200V
Package Shape :
RECTANGULAR
Drain Current-Max (Abs) (ID) :
0.8A
Number of Elements :
1
Power Dissipation-Max :
50W Tc
Qualification Status :
Not Qualified
JEDEC-95 Code :
TO-220AB
Pin Count :
3
Drive Voltage (Max Rds On,Min Rds On) :
10V
Pbfree Code :
yes
Case Connection :
DRAIN
Transistor Element Material :
SILICON
FET Feature :
--
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Operating Temperature :
-55°C~150°C TJ
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
FET Type :
N-Channel
Series :
Polar™
Number of Channels :
1 Channel
Product Category :
MOSFET
Package :
Tube
Reach Compliance Code :
Compliant
Current - Continuous Drain (Id) @ 25°C :
800mA Tc
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Drain-source On Resistance-Max :
25 Ω
Gate Charge (Qg) (Max) @ Vgs :
14nC @ 10V
Transistor Type :
1 N-Channel
Mounting Style :
Through Hole
Published :
2008
Factory Lead Time :
24 Weeks
Transistor Polarity :
N-Channel
Additional Feature :
AVALANCHE RATED
Lead Free :
Lead Free
ECCN Code :
EAR99
Terminal Form :
THROUGH-HOLE
Brand :
IXYS
Number of Terminals :
3
Configuration :
SINGLE WITH BUILT-IN DIODE
Channel Mode :
Enhancement
Vgs (Max) :
±20V
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Supplier Device Package :
TO-220AB
Continuous Drain Current (ID) :
800mA
Length :
10.66 mm
Pulsed Drain Current-Max (IDM) :
1.8A
Vgs(th) (Max) @ Id :
4.5V @ 50μA
RoHS :
Details
Product Type :
MOSFET
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Base Product Number :
IXTP08
Minimum Operating Temperature :
- 55 C
Mount :
Through Hole
Height :
9.15 mm
Package / Case :
TO-220-3
RoHS Status :
ROHS3 Compliant
Maximum Operating Temperature :
+ 150 C
Mounting Type :
Through Hole
Input Capacitance (Ciss) (Max) @ Vds :
333pF @ 25V
Rise Time :
26 ns
Avalanche Energy Rating (Eas) :
80 mJ
Product Status :
Active
Packaging :
Tube
JESD-609 Code :
e1
Operating Mode :
ENHANCEMENT MODE
Number of Pins :
3
Number of Terminations :
3
Transistor Application :
SWITCHING
Terminal Position :
Single
Polarity/Channel Type :
N-Channel
Power Dissipation-Max (Abs) :
50 W
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTP08N120P from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Number of Channels:1 Channel, Package / Case:TO-220-3, Mounting Type:Through Hole, Number of Pins:3, Number of Terminations:3, IXTP08N120P pinout, IXTP08N120P datasheet PDF, IXTP08N120P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTP08N120P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTP08N120P


N-Channel Tube 25 Ω @ 500mA, 10V ±20V 333pF @ 25V 14nC @ 10V 1200V TO-220-3

IXTP08N120P Overview


Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 80 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 333pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 800mA.0.8A is the drain current of this device, which is the maximum continuous current transistor can carry.Peak drain current for this device is 1.8A, which is its maximum pulsed drain current.To maintain normal operation, the DS breakdown voltage should be kept above 1200V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 1200V.Using drive voltage (10V) reduces this device's overall power consumption.

IXTP08N120P Features


the avalanche energy rating (Eas) is 80 mJ
a continuous drain current (ID) of 800mA
based on its rated peak drain current 1.8A.
a 1200V drain to source voltage (Vdss)


IXTP08N120P Applications


There are a lot of IXYS
IXTP08N120P applications of single MOSFETs transistors.


  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
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