IXTP08N120P

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Mfr.Part #
IXTP08N120P
Manufacturer
Littelfuse
Package / Case
TO-220-3
Datasheet
Download
Description
MOSFET N-CH 1200V 800MA TO220AB
Stock
47,056
In Stock :
47,056

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Packaging :
Tube
Pbfree Code :
yes
Number of Pins :
3
Reach Compliance Code :
Compliant
Package / Case :
TO-220-3
Supplier Device Package :
TO-220AB
JESD-30 Code :
R-PSFM-T3
Avalanche Energy Rating (Eas) :
80 mJ
Pulsed Drain Current-Max (IDM) :
1.8A
Transistor Element Material :
SILICON
Length :
10.66 mm
Qualification Status :
Not Qualified
Brand :
IXYS
Package Shape :
RECTANGULAR
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Minimum Operating Temperature :
- 55 C
Power Dissipation (Max) :
50W (Tc)
JEDEC-95 Code :
TO-220AB
Surface Mount :
No
RoHS Status :
ROHS3 Compliant
Vgs (Max) :
±20V
Width :
4.83 mm
Continuous Drain Current (ID) :
800mA
Pin Count :
3
Case Connection :
DRAIN
Manufacturer :
IXYS
Power Dissipation-Max :
50W Tc
Polarity/Channel Type :
N-Channel
JESD-609 Code :
e1
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Mounting Type :
Through Hole
Power Dissipation-Max (Abs) :
50 W
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Published :
2008
FET Type :
N-Channel
Package :
Tube
Product Category :
MOSFET
Terminal Position :
Single
Current - Continuous Drain (Id) @ 25°C :
800mA Tc
Drain Current-Max (Abs) (ID) :
0.8A
Input Capacitance (Ciss) (Max) @ Vds :
333pF @ 25V
Mount :
Through Hole
Number of Channels :
1 Channel
Vgs(th) (Max) @ Id :
4.5V @ 50μA
Additional Feature :
AVALANCHE RATED
Drive Voltage (Max Rds On,Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
25 Ω @ 500mA, 10V
Series :
Polar™
Height :
9.15 mm
Transistor Type :
1 N-Channel
Gate Charge (Qg) (Max) @ Vgs :
14nC @ 10V
RoHS :
Details
Base Product Number :
IXTP08
Drain-source On Resistance-Max :
25 Ω
Drain to Source Voltage (Vdss) :
1200V
Product Type :
MOSFET
FET Feature :
--
Configuration :
SINGLE WITH BUILT-IN DIODE
Operating Temperature :
-55°C~150°C TJ
Transistor Polarity :
N-Channel
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
ECCN Code :
EAR99
Channel Mode :
Enhancement
Rise Time :
26 ns
Number of Terminals :
3
Operating Mode :
ENHANCEMENT MODE
Lead Free :
Lead Free
Transistor Application :
SWITCHING
Maximum Operating Temperature :
+ 150 C
Number of Elements :
1
Mounting Style :
Through Hole
DS Breakdown Voltage-Min :
1200V
Product Status :
Active
Number of Terminations :
3
Factory Lead Time :
24 Weeks
Terminal Form :
THROUGH-HOLE
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTP08N120P from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Package / Case:TO-220-3, Mounting Type:Through Hole, Number of Channels:1 Channel, Operating Temperature:-55°C~150°C TJ, Number of Terminations:3, IXTP08N120P pinout, IXTP08N120P datasheet PDF, IXTP08N120P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTP08N120P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTP08N120P


N-Channel Tube 25 Ω @ 500mA, 10V ±20V 333pF @ 25V 14nC @ 10V 1200V TO-220-3

IXTP08N120P Overview


Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 80 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 333pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 800mA.0.8A is the drain current of this device, which is the maximum continuous current transistor can carry.Peak drain current for this device is 1.8A, which is its maximum pulsed drain current.To maintain normal operation, the DS breakdown voltage should be kept above 1200V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 1200V.Using drive voltage (10V) reduces this device's overall power consumption.

IXTP08N120P Features


the avalanche energy rating (Eas) is 80 mJ
a continuous drain current (ID) of 800mA
based on its rated peak drain current 1.8A.
a 1200V drain to source voltage (Vdss)


IXTP08N120P Applications


There are a lot of IXYS
IXTP08N120P applications of single MOSFETs transistors.


  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
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