IXTP08N120P
- Mfr.Part #
- IXTP08N120P
- Manufacturer
- Littelfuse
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 1200V 800MA TO220AB
- Stock
- 47,056
- In Stock :
- 47,056
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Height :
- 9.15 mm
- Rise Time :
- 26 ns
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Product Category :
- MOSFET
- Gate Charge (Qg) (Max) @ Vgs :
- 14nC @ 10V
- RoHS :
- Details
- Case Connection :
- DRAIN
- Terminal Position :
- Single
- Base Product Number :
- IXTP08
- Pulsed Drain Current-Max (IDM) :
- 1.8A
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Manufacturer :
- IXYS
- Number of Terminations :
- 3
- Transistor Type :
- 1 N-Channel
- FET Feature :
- --
- Package / Case :
- TO-220-3
- Width :
- 4.83 mm
- Packaging :
- Tube
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Power Dissipation-Max (Abs) :
- 50 W
- Qualification Status :
- Not Qualified
- DS Breakdown Voltage-Min :
- 1200V
- Vgs (Max) :
- ±20V
- Number of Pins :
- 3
- Avalanche Energy Rating (Eas) :
- 80 mJ
- Current - Continuous Drain (Id) @ 25°C :
- 800mA Tc
- Minimum Operating Temperature :
- - 55 C
- Number of Elements :
- 1
- Package Shape :
- RECTANGULAR
- Rds On (Max) @ Id, Vgs :
- 25 Ω @ 500mA, 10V
- Number of Terminals :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Terminal Form :
- THROUGH-HOLE
- Drain to Source Voltage (Vdss) :
- 1200V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Number of Channels :
- 1 Channel
- Lead Free :
- Lead Free
- Product Type :
- MOSFET
- Continuous Drain Current (ID) :
- 800mA
- Product Status :
- Active
- Length :
- 10.66 mm
- Operating Mode :
- ENHANCEMENT MODE
- Transistor Element Material :
- SILICON
- Transistor Polarity :
- N-Channel
- Published :
- 2008
- Transistor Application :
- SWITCHING
- Mounting Type :
- Through Hole
- JESD-609 Code :
- e1
- Reach Compliance Code :
- Compliant
- Pbfree Code :
- yes
- Surface Mount :
- No
- Maximum Operating Temperature :
- + 150 C
- ECCN Code :
- EAR99
- Mount :
- Through Hole
- Input Capacitance (Ciss) (Max) @ Vds :
- 333pF @ 25V
- Series :
- Polar™
- Channel Mode :
- Enhancement
- Power Dissipation (Max) :
- 50W (Tc)
- JESD-30 Code :
- R-PSFM-T3
- Factory Lead Time :
- 24 Weeks
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Operating Temperature :
- -55°C~150°C TJ
- Additional Feature :
- AVALANCHE RATED
- Pin Count :
- 3
- Package :
- Tube
- Polarity/Channel Type :
- N-Channel
- Power Dissipation-Max :
- 50W Tc
- JEDEC-95 Code :
- TO-220AB
- Drain-source On Resistance-Max :
- 25 Ω
- FET Type :
- N-Channel
- Drain Current-Max (Abs) (ID) :
- 0.8A
- Supplier Device Package :
- TO-220AB
- Mounting Style :
- Through Hole
- RoHS Status :
- ROHS3 Compliant
- Brand :
- IXYS
- Vgs(th) (Max) @ Id :
- 4.5V @ 50μA
- Datasheets
- IXTP08N120P
IXTP08N120P Documents

N-Channel Tube 25 Ω @ 500mA, 10V ±20V 333pF @ 25V 14nC @ 10V 1200V TO-220-3
IXTP08N120P Overview
Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 80 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 333pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 800mA.0.8A is the drain current of this device, which is the maximum continuous current transistor can carry.Peak drain current for this device is 1.8A, which is its maximum pulsed drain current.To maintain normal operation, the DS breakdown voltage should be kept above 1200V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 1200V.Using drive voltage (10V) reduces this device's overall power consumption.
IXTP08N120P Features
the avalanche energy rating (Eas) is 80 mJ
a continuous drain current (ID) of 800mA
based on its rated peak drain current 1.8A.
a 1200V drain to source voltage (Vdss)
IXTP08N120P Applications
There are a lot of IXYS
IXTP08N120P applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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