IXTP08N120P
- Mfr.Part #
- IXTP08N120P
- Manufacturer
- Littelfuse
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 1200V 800MA TO220AB
- Stock
- 47,056
- In Stock :
- 47,056
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Additional Feature :
- AVALANCHE RATED
- Series :
- Polar™
- Rds On (Max) @ Id, Vgs :
- 25 Ω @ 500mA, 10V
- Drain-source On Resistance-Max :
- 25 Ω
- Gate Charge (Qg) (Max) @ Vgs :
- 14nC @ 10V
- Package / Case :
- TO-220-3
- JESD-30 Code :
- R-PSFM-T3
- Number of Terminals :
- 3
- RoHS Status :
- ROHS3 Compliant
- Vgs(th) (Max) @ Id :
- 4.5V @ 50μA
- JEDEC-95 Code :
- TO-220AB
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Avalanche Energy Rating (Eas) :
- 80 mJ
- Package Shape :
- RECTANGULAR
- Polarity/Channel Type :
- N-Channel
- Pulsed Drain Current-Max (IDM) :
- 1.8A
- Channel Mode :
- Enhancement
- Mount :
- Through Hole
- Continuous Drain Current (ID) :
- 800mA
- Product Category :
- MOSFET
- Packaging :
- Tube
- JESD-609 Code :
- e1
- Minimum Operating Temperature :
- - 55 C
- Vgs (Max) :
- ±20V
- ECCN Code :
- EAR99
- Pbfree Code :
- yes
- Transistor Type :
- 1 N-Channel
- Power Dissipation (Max) :
- 50W (Tc)
- Transistor Application :
- SWITCHING
- FET Feature :
- --
- Lead Free :
- Lead Free
- Number of Elements :
- 1
- Product Type :
- MOSFET
- Height :
- 9.15 mm
- Qualification Status :
- Not Qualified
- Operating Mode :
- ENHANCEMENT MODE
- Factory Lead Time :
- 24 Weeks
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Manufacturer :
- IXYS
- Rise Time :
- 26 ns
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Power Dissipation-Max :
- 50W Tc
- Reach Compliance Code :
- Compliant
- Length :
- 10.66 mm
- Transistor Element Material :
- SILICON
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Width :
- 4.83 mm
- Drain Current-Max (Abs) (ID) :
- 0.8A
- Drain to Source Voltage (Vdss) :
- 1200V
- Number of Pins :
- 3
- Input Capacitance (Ciss) (Max) @ Vds :
- 333pF @ 25V
- Maximum Operating Temperature :
- + 150 C
- Brand :
- IXYS
- RoHS :
- Details
- Current - Continuous Drain (Id) @ 25°C :
- 800mA Tc
- Base Product Number :
- IXTP08
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Published :
- 2008
- Package :
- Tube
- Number of Channels :
- 1 Channel
- Surface Mount :
- No
- Terminal Form :
- THROUGH-HOLE
- Terminal Position :
- Single
- Pin Count :
- 3
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- FET Type :
- N-Channel
- Product Status :
- Active
- Transistor Polarity :
- N-Channel
- Mounting Style :
- Through Hole
- DS Breakdown Voltage-Min :
- 1200V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Power Dissipation-Max (Abs) :
- 50 W
- Supplier Device Package :
- TO-220AB
- Operating Temperature :
- -55°C~150°C TJ
- Number of Terminations :
- 3
- Mounting Type :
- Through Hole
- Case Connection :
- DRAIN
- Datasheets
- IXTP08N120P
IXTP08N120P Documents

N-Channel Tube 25 Ω @ 500mA, 10V ±20V 333pF @ 25V 14nC @ 10V 1200V TO-220-3
IXTP08N120P Overview
Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 80 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 333pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 800mA.0.8A is the drain current of this device, which is the maximum continuous current transistor can carry.Peak drain current for this device is 1.8A, which is its maximum pulsed drain current.To maintain normal operation, the DS breakdown voltage should be kept above 1200V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 1200V.Using drive voltage (10V) reduces this device's overall power consumption.
IXTP08N120P Features
the avalanche energy rating (Eas) is 80 mJ
a continuous drain current (ID) of 800mA
based on its rated peak drain current 1.8A.
a 1200V drain to source voltage (Vdss)
IXTP08N120P Applications
There are a lot of IXYS
IXTP08N120P applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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