IXTP08N120P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Mounting Style :

Through Hole

DS Breakdown Voltage-Min :

1200V

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Factory Lead Time :

24 Weeks

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Product Category :

MOSFET

Vgs (Max) :

±20V

JESD-609 Code :

e1

Pin Count :

3

Width :

4.83 mm

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Length :

10.66 mm

JESD-30 Code :

R-PSFM-T3

Operating Mode :

ENHANCEMENT MODE

Drain-source On Resistance-Max :

25 Ω

FET Type :

N-Channel

Terminal Form :

THROUGH-HOLE

Transistor Application :

SWITCHING

Gate Charge (Qg) (Max) @ Vgs :

14nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

333pF @ 25V

Package :

Tube

Product Status :

Active

Number of Terminations :

3

Additional Feature :

AVALANCHE RATED

Minimum Operating Temperature :

- 55 C

Case Connection :

DRAIN

Operating Temperature :

-55°C~150°C TJ

Power Dissipation-Max :

50W Tc

Rise Time :

26 ns

Current - Continuous Drain (Id) @ 25°C :

800mA Tc

Number of Terminals :

3

Terminal Position :

Single

Lead Free :

Lead Free

Vgs(th) (Max) @ Id :

4.5V @ 50μA

JEDEC-95 Code :

TO-220AB

Transistor Element Material :

SILICON

Pulsed Drain Current-Max (IDM) :

1.8A

Brand :

IXYS

Transistor Type :

1 N-Channel

Reach Compliance Code :

Compliant

Qualification Status :

Not Qualified

Package Shape :

RECTANGULAR

Power Dissipation-Max (Abs) :

50 W

Rds On (Max) @ Id, Vgs :

25 Ω @ 500mA, 10V

Drive Voltage (Max Rds On,Min Rds On) :

10V

RoHS :

Details

Configuration :

SINGLE WITH BUILT-IN DIODE

Published :

2008

RoHS Status :

ROHS3 Compliant

FET Feature :

--

Maximum Operating Temperature :

+ 150 C

Mounting Type :

Through Hole

ECCN Code :

EAR99

Product Type :

MOSFET

Series :

Polar™

Pbfree Code :

yes

Surface Mount :

No

Continuous Drain Current (ID) :

800mA

Drain to Source Voltage (Vdss) :

1200V

Drain Current-Max (Abs) (ID) :

0.8A

Mount :

Through Hole

Height :

9.15 mm

Supplier Device Package :

TO-220AB

Number of Elements :

1

Polarity/Channel Type :

N-Channel

Number of Channels :

1 Channel

Number of Pins :

3

Channel Mode :

Enhancement

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Avalanche Energy Rating (Eas) :

80 mJ

Packaging :

Tube

Power Dissipation (Max) :

50W (Tc)

Manufacturer :

IXYS

Transistor Polarity :

N-Channel

Base Product Number :

IXTP08

Package / Case :

TO-220-3