IXTP08N120P

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Mfr.Part #
IXTP08N120P
Manufacturer
Littelfuse
Package / Case
TO-220-3
Datasheet
Download
Description
MOSFET N-CH 1200V 800MA TO220AB
Stock
47,056
In Stock :
47,056

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Height :
9.15 mm
Pin Count :
3
Number of Elements :
1
Operating Mode :
ENHANCEMENT MODE
Length :
10.66 mm
Gate Charge (Qg) (Max) @ Vgs :
14nC @ 10V
Channel Mode :
Enhancement
Pulsed Drain Current-Max (IDM) :
1.8A
Continuous Drain Current (ID) :
800mA
Mounting Style :
Through Hole
Rise Time :
26 ns
Package / Case :
TO-220-3
Drain Current-Max (Abs) (ID) :
0.8A
RoHS :
Details
ECCN Code :
EAR99
JESD-609 Code :
e1
Rds On (Max) @ Id, Vgs :
25 Ω @ 500mA, 10V
JEDEC-95 Code :
TO-220AB
DS Breakdown Voltage-Min :
1200V
Brand :
IXYS
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Base Product Number :
IXTP08
Manufacturer :
IXYS
Number of Pins :
3
Power Dissipation-Max :
50W Tc
Width :
4.83 mm
Terminal Position :
Single
Transistor Type :
1 N-Channel
Operating Temperature :
-55°C~150°C TJ
Package Shape :
RECTANGULAR
Reach Compliance Code :
Compliant
Supplier Device Package :
TO-220AB
Number of Terminals :
3
Transistor Element Material :
SILICON
Additional Feature :
AVALANCHE RATED
Transistor Polarity :
N-Channel
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Drain-source On Resistance-Max :
25 Ω
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
FET Type :
N-Channel
Maximum Operating Temperature :
+ 150 C
Number of Channels :
1 Channel
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Factory Lead Time :
24 Weeks
Qualification Status :
Not Qualified
Mounting Type :
Through Hole
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Vgs (Max) :
±20V
RoHS Status :
ROHS3 Compliant
Mount :
Through Hole
Surface Mount :
No
Product Type :
MOSFET
Packaging :
Tube
FET Feature :
--
Avalanche Energy Rating (Eas) :
80 mJ
Transistor Application :
SWITCHING
Product Category :
MOSFET
Minimum Operating Temperature :
- 55 C
Current - Continuous Drain (Id) @ 25°C :
800mA Tc
Power Dissipation-Max (Abs) :
50 W
Drain to Source Voltage (Vdss) :
1200V
Input Capacitance (Ciss) (Max) @ Vds :
333pF @ 25V
Configuration :
SINGLE WITH BUILT-IN DIODE
Series :
Polar™
Published :
2008
Polarity/Channel Type :
N-Channel
Number of Terminations :
3
Lead Free :
Lead Free
Package :
Tube
Terminal Form :
THROUGH-HOLE
Case Connection :
DRAIN
Vgs(th) (Max) @ Id :
4.5V @ 50μA
Drive Voltage (Max Rds On,Min Rds On) :
10V
Power Dissipation (Max) :
50W (Tc)
Product Status :
Active
JESD-30 Code :
R-PSFM-T3
Pbfree Code :
yes
Datasheets
IXTP08N120P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTP08N120P from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-220-3, Number of Pins:3, Operating Temperature:-55°C~150°C TJ, Number of Channels:1 Channel, Mounting Type:Through Hole, Number of Terminations:3, IXTP08N120P pinout, IXTP08N120P datasheet PDF, IXTP08N120P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTP08N120P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTP08N120P


N-Channel Tube 25 Ω @ 500mA, 10V ±20V 333pF @ 25V 14nC @ 10V 1200V TO-220-3

IXTP08N120P Overview


Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 80 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 333pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 800mA.0.8A is the drain current of this device, which is the maximum continuous current transistor can carry.Peak drain current for this device is 1.8A, which is its maximum pulsed drain current.To maintain normal operation, the DS breakdown voltage should be kept above 1200V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 1200V.Using drive voltage (10V) reduces this device's overall power consumption.

IXTP08N120P Features


the avalanche energy rating (Eas) is 80 mJ
a continuous drain current (ID) of 800mA
based on its rated peak drain current 1.8A.
a 1200V drain to source voltage (Vdss)


IXTP08N120P Applications


There are a lot of IXYS
IXTP08N120P applications of single MOSFETs transistors.


  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
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