IXTP08N120P

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Mfr.Part #
IXTP08N120P
Manufacturer
Littelfuse
Package / Case
TO-220-3
Datasheet
Download
Description
MOSFET N-CH 1200V 800MA TO220AB
Stock
47,056
In Stock :
47,056

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Height :
9.15 mm
Rise Time :
26 ns
Drive Voltage (Max Rds On,Min Rds On) :
10V
Product Category :
MOSFET
Gate Charge (Qg) (Max) @ Vgs :
14nC @ 10V
RoHS :
Details
Case Connection :
DRAIN
Terminal Position :
Single
Base Product Number :
IXTP08
Pulsed Drain Current-Max (IDM) :
1.8A
Configuration :
SINGLE WITH BUILT-IN DIODE
Manufacturer :
IXYS
Number of Terminations :
3
Transistor Type :
1 N-Channel
FET Feature :
--
Package / Case :
TO-220-3
Width :
4.83 mm
Packaging :
Tube
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Power Dissipation-Max (Abs) :
50 W
Qualification Status :
Not Qualified
DS Breakdown Voltage-Min :
1200V
Vgs (Max) :
±20V
Number of Pins :
3
Avalanche Energy Rating (Eas) :
80 mJ
Current - Continuous Drain (Id) @ 25°C :
800mA Tc
Minimum Operating Temperature :
- 55 C
Number of Elements :
1
Package Shape :
RECTANGULAR
Rds On (Max) @ Id, Vgs :
25 Ω @ 500mA, 10V
Number of Terminals :
3
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Terminal Form :
THROUGH-HOLE
Drain to Source Voltage (Vdss) :
1200V
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Number of Channels :
1 Channel
Lead Free :
Lead Free
Product Type :
MOSFET
Continuous Drain Current (ID) :
800mA
Product Status :
Active
Length :
10.66 mm
Operating Mode :
ENHANCEMENT MODE
Transistor Element Material :
SILICON
Transistor Polarity :
N-Channel
Published :
2008
Transistor Application :
SWITCHING
Mounting Type :
Through Hole
JESD-609 Code :
e1
Reach Compliance Code :
Compliant
Pbfree Code :
yes
Surface Mount :
No
Maximum Operating Temperature :
+ 150 C
ECCN Code :
EAR99
Mount :
Through Hole
Input Capacitance (Ciss) (Max) @ Vds :
333pF @ 25V
Series :
Polar™
Channel Mode :
Enhancement
Power Dissipation (Max) :
50W (Tc)
JESD-30 Code :
R-PSFM-T3
Factory Lead Time :
24 Weeks
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Operating Temperature :
-55°C~150°C TJ
Additional Feature :
AVALANCHE RATED
Pin Count :
3
Package :
Tube
Polarity/Channel Type :
N-Channel
Power Dissipation-Max :
50W Tc
JEDEC-95 Code :
TO-220AB
Drain-source On Resistance-Max :
25 Ω
FET Type :
N-Channel
Drain Current-Max (Abs) (ID) :
0.8A
Supplier Device Package :
TO-220AB
Mounting Style :
Through Hole
RoHS Status :
ROHS3 Compliant
Brand :
IXYS
Vgs(th) (Max) @ Id :
4.5V @ 50μA
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTP08N120P from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Package / Case:TO-220-3, Number of Pins:3, Number of Channels:1 Channel, Mounting Type:Through Hole, Operating Temperature:-55°C~150°C TJ, IXTP08N120P pinout, IXTP08N120P datasheet PDF, IXTP08N120P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTP08N120P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTP08N120P


N-Channel Tube 25 Ω @ 500mA, 10V ±20V 333pF @ 25V 14nC @ 10V 1200V TO-220-3

IXTP08N120P Overview


Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 80 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 333pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 800mA.0.8A is the drain current of this device, which is the maximum continuous current transistor can carry.Peak drain current for this device is 1.8A, which is its maximum pulsed drain current.To maintain normal operation, the DS breakdown voltage should be kept above 1200V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 1200V.Using drive voltage (10V) reduces this device's overall power consumption.

IXTP08N120P Features


the avalanche energy rating (Eas) is 80 mJ
a continuous drain current (ID) of 800mA
based on its rated peak drain current 1.8A.
a 1200V drain to source voltage (Vdss)


IXTP08N120P Applications


There are a lot of IXYS
IXTP08N120P applications of single MOSFETs transistors.


  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
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