IXTP08N120P
- Mfr.Part #
- IXTP08N120P
- Manufacturer
- Littelfuse
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 1200V 800MA TO220AB
- Stock
- 47,056
- In Stock :
- 47,056
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Package Shape :
- RECTANGULAR
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Drain to Source Voltage (Vdss) :
- 1200V
- FET Feature :
- --
- Qualification Status :
- Not Qualified
- JESD-609 Code :
- e1
- Length :
- 10.66 mm
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Factory Lead Time :
- 24 Weeks
- Number of Elements :
- 1
- Mount :
- Through Hole
- Transistor Type :
- 1 N-Channel
- Pulsed Drain Current-Max (IDM) :
- 1.8A
- FET Type :
- N-Channel
- Surface Mount :
- No
- Operating Mode :
- ENHANCEMENT MODE
- Avalanche Energy Rating (Eas) :
- 80 mJ
- Product Type :
- MOSFET
- Operating Temperature :
- -55°C~150°C TJ
- Additional Feature :
- AVALANCHE RATED
- Power Dissipation-Max :
- 50W Tc
- DS Breakdown Voltage-Min :
- 1200V
- ECCN Code :
- EAR99
- Transistor Polarity :
- N-Channel
- Mounting Style :
- Through Hole
- Number of Terminals :
- 3
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Pbfree Code :
- yes
- Manufacturer :
- IXYS
- Height :
- 9.15 mm
- Vgs(th) (Max) @ Id :
- 4.5V @ 50μA
- Number of Channels :
- 1 Channel
- Product Status :
- Active
- Vgs (Max) :
- ±20V
- Drain Current-Max (Abs) (ID) :
- 0.8A
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Gate Charge (Qg) (Max) @ Vgs :
- 14nC @ 10V
- Current - Continuous Drain (Id) @ 25°C :
- 800mA Tc
- Transistor Application :
- SWITCHING
- Lead Free :
- Lead Free
- Minimum Operating Temperature :
- - 55 C
- Supplier Device Package :
- TO-220AB
- Packaging :
- Tube
- Maximum Operating Temperature :
- + 150 C
- Case Connection :
- DRAIN
- Product Category :
- MOSFET
- JEDEC-95 Code :
- TO-220AB
- Base Product Number :
- IXTP08
- Continuous Drain Current (ID) :
- 800mA
- Published :
- 2008
- Input Capacitance (Ciss) (Max) @ Vds :
- 333pF @ 25V
- Rds On (Max) @ Id, Vgs :
- 25 Ω @ 500mA, 10V
- Series :
- Polar™
- Rise Time :
- 26 ns
- Power Dissipation-Max (Abs) :
- 50 W
- Transistor Element Material :
- SILICON
- Pin Count :
- 3
- Number of Terminations :
- 3
- Terminal Form :
- THROUGH-HOLE
- Reach Compliance Code :
- Compliant
- Package :
- Tube
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Package / Case :
- TO-220-3
- Mounting Type :
- Through Hole
- JESD-30 Code :
- R-PSFM-T3
- Width :
- 4.83 mm
- Polarity/Channel Type :
- N-Channel
- RoHS :
- Details
- Number of Pins :
- 3
- Terminal Position :
- Single
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Channel Mode :
- Enhancement
- Power Dissipation (Max) :
- 50W (Tc)
- RoHS Status :
- ROHS3 Compliant
- Drain-source On Resistance-Max :
- 25 Ω
- Brand :
- IXYS
- Datasheets
- IXTP08N120P
IXTP08N120P Documents

N-Channel Tube 25 Ω @ 500mA, 10V ±20V 333pF @ 25V 14nC @ 10V 1200V TO-220-3
IXTP08N120P Overview
Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 80 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 333pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 800mA.0.8A is the drain current of this device, which is the maximum continuous current transistor can carry.Peak drain current for this device is 1.8A, which is its maximum pulsed drain current.To maintain normal operation, the DS breakdown voltage should be kept above 1200V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 1200V.Using drive voltage (10V) reduces this device's overall power consumption.
IXTP08N120P Features
the avalanche energy rating (Eas) is 80 mJ
a continuous drain current (ID) of 800mA
based on its rated peak drain current 1.8A.
a 1200V drain to source voltage (Vdss)
IXTP08N120P Applications
There are a lot of IXYS
IXTP08N120P applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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