IXTP08N120P

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Mfr.Part #
IXTP08N120P
Manufacturer
Littelfuse
Package / Case
TO-220-3
Datasheet
Download
Description
MOSFET N-CH 1200V 800MA TO220AB
Stock
47,056
In Stock :
47,056

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Factory Lead Time :
24 Weeks
Pin Count :
3
Avalanche Energy Rating (Eas) :
80 mJ
RoHS Status :
ROHS3 Compliant
Number of Terminations :
3
Rise Time :
26 ns
ECCN Code :
EAR99
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Configuration :
SINGLE WITH BUILT-IN DIODE
Package Shape :
RECTANGULAR
Additional Feature :
AVALANCHE RATED
Pbfree Code :
yes
Channel Mode :
Enhancement
Surface Mount :
No
Package / Case :
TO-220-3
Drain Current-Max (Abs) (ID) :
0.8A
Vgs (Max) :
±20V
Power Dissipation-Max :
50W Tc
Drain to Source Voltage (Vdss) :
1200V
Lead Free :
Lead Free
Length :
10.66 mm
Transistor Application :
SWITCHING
Manufacturer :
IXYS
Gate Charge (Qg) (Max) @ Vgs :
14nC @ 10V
Mounting Type :
Through Hole
Width :
4.83 mm
Mount :
Through Hole
Height :
9.15 mm
Published :
2008
Supplier Device Package :
TO-220AB
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Terminal Form :
THROUGH-HOLE
Product Type :
MOSFET
Reach Compliance Code :
Compliant
Vgs(th) (Max) @ Id :
4.5V @ 50μA
JESD-609 Code :
e1
DS Breakdown Voltage-Min :
1200V
Series :
Polar™
Power Dissipation (Max) :
50W (Tc)
Product Category :
MOSFET
Operating Temperature :
-55°C~150°C TJ
Packaging :
Tube
Package :
Tube
Number of Pins :
3
Minimum Operating Temperature :
- 55 C
Drive Voltage (Max Rds On,Min Rds On) :
10V
Base Product Number :
IXTP08
Number of Elements :
1
Polarity/Channel Type :
N-Channel
Mounting Style :
Through Hole
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
JEDEC-95 Code :
TO-220AB
Transistor Element Material :
SILICON
Pulsed Drain Current-Max (IDM) :
1.8A
Number of Channels :
1 Channel
Transistor Type :
1 N-Channel
Brand :
IXYS
Product Status :
Active
Operating Mode :
ENHANCEMENT MODE
RoHS :
Details
FET Type :
N-Channel
Number of Terminals :
3
FET Technology :
METAL-OXIDE SEMICONDUCTOR
FET Feature :
--
Continuous Drain Current (ID) :
800mA
Maximum Operating Temperature :
+ 150 C
Qualification Status :
Not Qualified
Transistor Polarity :
N-Channel
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Current - Continuous Drain (Id) @ 25°C :
800mA Tc
JESD-30 Code :
R-PSFM-T3
Drain-source On Resistance-Max :
25 Ω
Case Connection :
DRAIN
Power Dissipation-Max (Abs) :
50 W
Rds On (Max) @ Id, Vgs :
25 Ω @ 500mA, 10V
Terminal Position :
Single
Input Capacitance (Ciss) (Max) @ Vds :
333pF @ 25V
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTP08N120P from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Package / Case:TO-220-3, Mounting Type:Through Hole, Operating Temperature:-55°C~150°C TJ, Number of Pins:3, Number of Channels:1 Channel, IXTP08N120P pinout, IXTP08N120P datasheet PDF, IXTP08N120P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTP08N120P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTP08N120P


N-Channel Tube 25 Ω @ 500mA, 10V ±20V 333pF @ 25V 14nC @ 10V 1200V TO-220-3

IXTP08N120P Overview


Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 80 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 333pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 800mA.0.8A is the drain current of this device, which is the maximum continuous current transistor can carry.Peak drain current for this device is 1.8A, which is its maximum pulsed drain current.To maintain normal operation, the DS breakdown voltage should be kept above 1200V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 1200V.Using drive voltage (10V) reduces this device's overall power consumption.

IXTP08N120P Features


the avalanche energy rating (Eas) is 80 mJ
a continuous drain current (ID) of 800mA
based on its rated peak drain current 1.8A.
a 1200V drain to source voltage (Vdss)


IXTP08N120P Applications


There are a lot of IXYS
IXTP08N120P applications of single MOSFETs transistors.


  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
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