IXTP08N120P

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Mfr.Part #
IXTP08N120P
Manufacturer
Littelfuse
Package / Case
TO-220-3
Datasheet
Download
Description
MOSFET N-CH 1200V 800MA TO220AB
Stock
47,056
In Stock :
47,056

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Package Shape :
RECTANGULAR
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Drive Voltage (Max Rds On,Min Rds On) :
10V
Drain to Source Voltage (Vdss) :
1200V
FET Feature :
--
Qualification Status :
Not Qualified
JESD-609 Code :
e1
Length :
10.66 mm
Configuration :
SINGLE WITH BUILT-IN DIODE
Factory Lead Time :
24 Weeks
Number of Elements :
1
Mount :
Through Hole
Transistor Type :
1 N-Channel
Pulsed Drain Current-Max (IDM) :
1.8A
FET Type :
N-Channel
Surface Mount :
No
Operating Mode :
ENHANCEMENT MODE
Avalanche Energy Rating (Eas) :
80 mJ
Product Type :
MOSFET
Operating Temperature :
-55°C~150°C TJ
Additional Feature :
AVALANCHE RATED
Power Dissipation-Max :
50W Tc
DS Breakdown Voltage-Min :
1200V
ECCN Code :
EAR99
Transistor Polarity :
N-Channel
Mounting Style :
Through Hole
Number of Terminals :
3
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Pbfree Code :
yes
Manufacturer :
IXYS
Height :
9.15 mm
Vgs(th) (Max) @ Id :
4.5V @ 50μA
Number of Channels :
1 Channel
Product Status :
Active
Vgs (Max) :
±20V
Drain Current-Max (Abs) (ID) :
0.8A
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Gate Charge (Qg) (Max) @ Vgs :
14nC @ 10V
Current - Continuous Drain (Id) @ 25°C :
800mA Tc
Transistor Application :
SWITCHING
Lead Free :
Lead Free
Minimum Operating Temperature :
- 55 C
Supplier Device Package :
TO-220AB
Packaging :
Tube
Maximum Operating Temperature :
+ 150 C
Case Connection :
DRAIN
Product Category :
MOSFET
JEDEC-95 Code :
TO-220AB
Base Product Number :
IXTP08
Continuous Drain Current (ID) :
800mA
Published :
2008
Input Capacitance (Ciss) (Max) @ Vds :
333pF @ 25V
Rds On (Max) @ Id, Vgs :
25 Ω @ 500mA, 10V
Series :
Polar™
Rise Time :
26 ns
Power Dissipation-Max (Abs) :
50 W
Transistor Element Material :
SILICON
Pin Count :
3
Number of Terminations :
3
Terminal Form :
THROUGH-HOLE
Reach Compliance Code :
Compliant
Package :
Tube
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Package / Case :
TO-220-3
Mounting Type :
Through Hole
JESD-30 Code :
R-PSFM-T3
Width :
4.83 mm
Polarity/Channel Type :
N-Channel
RoHS :
Details
Number of Pins :
3
Terminal Position :
Single
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Channel Mode :
Enhancement
Power Dissipation (Max) :
50W (Tc)
RoHS Status :
ROHS3 Compliant
Drain-source On Resistance-Max :
25 Ω
Brand :
IXYS
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTP08N120P from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Number of Channels:1 Channel, Number of Terminations:3, Package / Case:TO-220-3, Mounting Type:Through Hole, Number of Pins:3, IXTP08N120P pinout, IXTP08N120P datasheet PDF, IXTP08N120P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTP08N120P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTP08N120P


N-Channel Tube 25 Ω @ 500mA, 10V ±20V 333pF @ 25V 14nC @ 10V 1200V TO-220-3

IXTP08N120P Overview


Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 80 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 333pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 800mA.0.8A is the drain current of this device, which is the maximum continuous current transistor can carry.Peak drain current for this device is 1.8A, which is its maximum pulsed drain current.To maintain normal operation, the DS breakdown voltage should be kept above 1200V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 1200V.Using drive voltage (10V) reduces this device's overall power consumption.

IXTP08N120P Features


the avalanche energy rating (Eas) is 80 mJ
a continuous drain current (ID) of 800mA
based on its rated peak drain current 1.8A.
a 1200V drain to source voltage (Vdss)


IXTP08N120P Applications


There are a lot of IXYS
IXTP08N120P applications of single MOSFETs transistors.


  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
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