IXTP08N120P
- Mfr.Part #
- IXTP08N120P
- Manufacturer
- Littelfuse
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 1200V 800MA TO220AB
- Stock
- 47,056
- In Stock :
- 47,056
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Packaging :
- Tube
- Pbfree Code :
- yes
- Number of Pins :
- 3
- Reach Compliance Code :
- Compliant
- Package / Case :
- TO-220-3
- Supplier Device Package :
- TO-220AB
- JESD-30 Code :
- R-PSFM-T3
- Avalanche Energy Rating (Eas) :
- 80 mJ
- Pulsed Drain Current-Max (IDM) :
- 1.8A
- Transistor Element Material :
- SILICON
- Length :
- 10.66 mm
- Qualification Status :
- Not Qualified
- Brand :
- IXYS
- Package Shape :
- RECTANGULAR
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Minimum Operating Temperature :
- - 55 C
- Power Dissipation (Max) :
- 50W (Tc)
- JEDEC-95 Code :
- TO-220AB
- Surface Mount :
- No
- RoHS Status :
- ROHS3 Compliant
- Vgs (Max) :
- ±20V
- Width :
- 4.83 mm
- Continuous Drain Current (ID) :
- 800mA
- Pin Count :
- 3
- Case Connection :
- DRAIN
- Manufacturer :
- IXYS
- Power Dissipation-Max :
- 50W Tc
- Polarity/Channel Type :
- N-Channel
- JESD-609 Code :
- e1
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mounting Type :
- Through Hole
- Power Dissipation-Max (Abs) :
- 50 W
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Published :
- 2008
- FET Type :
- N-Channel
- Package :
- Tube
- Product Category :
- MOSFET
- Terminal Position :
- Single
- Current - Continuous Drain (Id) @ 25°C :
- 800mA Tc
- Drain Current-Max (Abs) (ID) :
- 0.8A
- Input Capacitance (Ciss) (Max) @ Vds :
- 333pF @ 25V
- Mount :
- Through Hole
- Number of Channels :
- 1 Channel
- Vgs(th) (Max) @ Id :
- 4.5V @ 50μA
- Additional Feature :
- AVALANCHE RATED
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Rds On (Max) @ Id, Vgs :
- 25 Ω @ 500mA, 10V
- Series :
- Polar™
- Height :
- 9.15 mm
- Transistor Type :
- 1 N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 14nC @ 10V
- RoHS :
- Details
- Base Product Number :
- IXTP08
- Drain-source On Resistance-Max :
- 25 Ω
- Drain to Source Voltage (Vdss) :
- 1200V
- Product Type :
- MOSFET
- FET Feature :
- --
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Operating Temperature :
- -55°C~150°C TJ
- Transistor Polarity :
- N-Channel
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- ECCN Code :
- EAR99
- Channel Mode :
- Enhancement
- Rise Time :
- 26 ns
- Number of Terminals :
- 3
- Operating Mode :
- ENHANCEMENT MODE
- Lead Free :
- Lead Free
- Transistor Application :
- SWITCHING
- Maximum Operating Temperature :
- + 150 C
- Number of Elements :
- 1
- Mounting Style :
- Through Hole
- DS Breakdown Voltage-Min :
- 1200V
- Product Status :
- Active
- Number of Terminations :
- 3
- Factory Lead Time :
- 24 Weeks
- Terminal Form :
- THROUGH-HOLE
- Datasheets
- IXTP08N120P
IXTP08N120P Documents

N-Channel Tube 25 Ω @ 500mA, 10V ±20V 333pF @ 25V 14nC @ 10V 1200V TO-220-3
IXTP08N120P Overview
Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 80 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 333pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 800mA.0.8A is the drain current of this device, which is the maximum continuous current transistor can carry.Peak drain current for this device is 1.8A, which is its maximum pulsed drain current.To maintain normal operation, the DS breakdown voltage should be kept above 1200V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 1200V.Using drive voltage (10V) reduces this device's overall power consumption.
IXTP08N120P Features
the avalanche energy rating (Eas) is 80 mJ
a continuous drain current (ID) of 800mA
based on its rated peak drain current 1.8A.
a 1200V drain to source voltage (Vdss)
IXTP08N120P Applications
There are a lot of IXYS
IXTP08N120P applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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