IXTP10N60P
- Mfr.Part #
- IXTP10N60P
- Manufacturer
- Littelfuse
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 10A TO220AB
- Stock
- 17,273
- In Stock :
- 17,273
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Base Product Number :
- IXTP10
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Tradename :
- PolarHV
- Width :
- 4.83 mm
- Mounting Type :
- Through Hole
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Rds On (Max) @ Id, Vgs :
- 740m Ω @ 5A, 10V
- JESD-30 Code :
- R-PSFM-T3
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Height :
- 16 mm
- Current Rating :
- 10A
- Number of Terminations :
- 3
- Package / Case :
- TO-220-3
- Power Dissipation-Max :
- 200W Tc
- RoHS Status :
- ROHS3 Compliant
- Lead Free :
- Lead Free
- Product Category :
- MOSFET
- JEDEC-95 Code :
- TO-220AB
- Mount :
- Through Hole
- Continuous Drain Current (ID) :
- 10A
- Drain-source On Resistance-Max :
- 0.74Ohm
- Transistor Application :
- SWITCHING
- Terminal Form :
- THROUGH-HOLE
- Polarity/Channel Type :
- N-Channel
- Factory Lead Time :
- 24 Weeks
- Product Type :
- MOSFET
- Package :
- Tube
- DS Breakdown Voltage-Min :
- 600 V
- Fall Time (Typ) :
- 21 ns
- Channel Mode :
- Enhancement
- Pulsed Drain Current-Max (IDM) :
- 30A
- Drain to Source Voltage (Vdss) :
- 600V
- Vgs(th) (Max) @ Id :
- 5.5V @ 250µA
- Transistor Type :
- 1 N-Channel
- Turn-Off Delay Time :
- 65 ns
- Power Dissipation :
- 200W
- FET Type :
- N-Channel
- Minimum Operating Temperature :
- - 55 C
- Supplier Device Package :
- TO-220AB
- Voltage - Rated DC :
- 600V
- Type :
- PolarHV Power MOSFET
- Rise Time :
- 27ns
- Power Dissipation-Max (Abs) :
- 200 W
- Series :
- Polar™
- Transistor Polarity :
- N-Channel
- Gate to Source Voltage (Vgs) :
- 30V
- Power Dissipation (Max) :
- 200W (Tc)
- Transistor Element Material :
- SILICON
- Number of Elements :
- 1
- Additional Feature :
- AVALANCHE RATED
- Terminal Position :
- Single
- Drain to Source Breakdown Voltage :
- 600V
- Pbfree Code :
- yes
- Number of Channels :
- 1 Channel
- RoHS :
- Details
- Current - Continuous Drain (Id) @ 25°C :
- 10A Tc
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Qualification Status :
- Not Qualified
- Case Connection :
- DRAIN
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Maximum Operating Temperature :
- + 150 C
- Element Configuration :
- Single
- Brand :
- IXYS
- Gate Charge (Qg) (Max) @ Vgs :
- 32nC @ 10V
- Number of Terminals :
- 3
- Manufacturer :
- IXYS
- Surface Mount :
- No
- Avalanche Energy Rating (Eas) :
- 500 mJ
- FET Feature :
- --
- Mounting Style :
- Through Hole
- Packaging :
- Tube
- Vgs (Max) :
- ±30V
- Pin Count :
- 3
- Length :
- 10.41 mm
- Input Capacitance (Ciss) (Max) @ Vds :
- 1610pF @ 25V
- Published :
- 2006
- Product Status :
- Active
- Configuration :
- Single
- Terminal Finish :
- Pure Tin (Sn)
- Package Shape :
- RECTANGULAR
- Drain Current-Max (Abs) (ID) :
- 10 A
- Operating Temperature :
- -55°C~150°C TJ
- Operating Mode :
- ENHANCEMENT MODE
- Reach Compliance Code :
- Compliant
- Datasheets
- IXTP10N60P

N-Channel Tube 740m Ω @ 5A, 10V ±30V 1610pF @ 25V 32nC @ 10V 600V TO-220-3
IXTP10N60P Overview
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 500 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 1610pF @ 25V.This device conducts a continuous drain current (ID) of 10A, which is the maximum continuous current transistor can conduct.Using VGS=600V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 600V (that is, no charge flow from drain to source).The drain current is the maximum continuous current this device can conduct, which is 10 A.When the device is turned off, a turn-off delay time of 65 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 30A.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 30V.A normal operation of the DS requires keeping the breakdown voltage above 600 V.This transistor requires a drain-source voltage (Vdss) of 600V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
IXTP10N60P Features
the avalanche energy rating (Eas) is 500 mJ
a continuous drain current (ID) of 10A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 65 ns
based on its rated peak drain current 30A.
a 600V drain to source voltage (Vdss)
IXTP10N60P Applications
There are a lot of IXYS
IXTP10N60P applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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