IXTP06N120P

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Mfr.Part #
IXTP06N120P
Manufacturer
Littelfuse
Package / Case
TO-220-3
Datasheet
Download
Description
MOSFET N-CH 1200V 600MA TO220AB
Stock
45,499
In Stock :
45,499

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Minimum Operating Temperature :
- 55 C
Drain to Source Resistance :
30 Ω
Product Status :
Active
Package / Case :
TO-220-3
Length :
10.66 mm
Drive Voltage (Max Rds On,Min Rds On) :
10V
Input Capacitance :
270 pF
RoHS Status :
ROHS3 Compliant
Transistor Element Material :
SILICON
Avalanche Energy Rating (Eas) :
50 mJ
RoHS :
Details
Product Category :
MOSFET
Pbfree Code :
yes
Number of Terminals :
3
Vgs (Max) :
±20V
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Number of Elements :
1
Factory Lead Time :
17 Weeks
Min Operating Temperature :
-55 °C
Terminal Form :
THROUGH-HOLE
Width :
4.82 mm
JEDEC-95 Code :
TO-220AB
Input Capacitance (Ciss) (Max) @ Vds :
270pF @ 25V
Max Operating Temperature :
150 °C
Transistor Application :
SWITCHING
JESD-30 Code :
R-PSFM-T3
FET Feature :
--
Transistor Type :
1 N-Channel
Product Type :
MOSFET
Operating Temperature :
-55°C~150°C TJ
Pin Count :
3
Drain Current-Max (Abs) (ID) :
0.6A
Terminal Finish :
Matte Tin (Sn)
Element Configuration :
Single
Brand :
IXYS
Reach Compliance Code :
Compliant
Gate to Source Voltage (Vgs) :
20V
Rds On (Max) @ Id, Vgs :
32 Ω @ 500mA, 10V
Operating Mode :
ENHANCEMENT MODE
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Channel Mode :
Enhancement
Gate Charge (Qg) (Max) @ Vgs :
13.3nC @ 10V
Supplier Device Package :
TO-220AB
Drain to Source Breakdown Voltage :
1.2kV
Manufacturer :
IXYS
Mounting Style :
Through Hole
Continuous Drain Current (ID) :
600mA
Pulsed Drain Current-Max (IDM) :
1.2A
Polarity/Channel Type :
N-Channel
Number of Channels :
1 Channel
Packaging :
Tube
Base Product Number :
IXTP06
Lead Free :
Lead Free
Power Dissipation-Max (Abs) :
42 W
Fall Time (Typ) :
27 ns
ECCN Code :
EAR99
Number of Terminations :
3
Transistor Polarity :
N-Channel
Power Dissipation-Max :
42W Tc
DS Breakdown Voltage-Min :
1200 V
Mount :
Through Hole
Mounting Type :
Through Hole
Drain-source On Resistance-Max :
34 Ω
Surface Mount :
No
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Vgs(th) (Max) @ Id :
4.5V @ 50μA
Max Power Dissipation :
42 W
Number of Pins :
3
Drain to Source Voltage (Vdss) :
1200V
Series :
PolarVHV™
Rds On Max :
32 Ω
Published :
2007
Power Dissipation (Max) :
42W (Tc)
Current - Continuous Drain (Id) @ 25°C :
600mA Tc
Configuration :
Single
Additional Feature :
AVALANCHE RATED
JESD-609 Code :
e3
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Rise Time :
24ns
Maximum Operating Temperature :
+ 150 C
FET Type :
N-Channel
Case Connection :
DRAIN
Power Dissipation :
42W
Height :
9.15 mm
Turn-Off Delay Time :
50 ns
Terminal Position :
Single
Package Shape :
RECTANGULAR
Package :
Tube
Qualification Status :
Not Qualified
Datasheets
IXTP06N120P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTP06N120P from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-220-3, Operating Temperature:-55°C~150°C TJ, Number of Channels:1 Channel, Number of Terminations:3, Mounting Type:Through Hole, Number of Pins:3, IXTP06N120P pinout, IXTP06N120P datasheet PDF, IXTP06N120P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTP06N120P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTP06N120P


N-Channel Tube 32 Ω @ 500mA, 10V ±20V 270pF @ 25V 13.3nC @ 10V 1200V TO-220-3

IXTP06N120P Overview


The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 50 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 270pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 600mA continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 1.2kV, and this device has a drainage-to-source breakdown voltage of 1.2kVV.Drain current refers to the maximum continuous current a device can conduct, and it is 0.6A.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 50 ns.Peak drain current is 1.2A, which is the maximum pulsed drain current.This device has a drain-to-source resistance of 30 Ω when a gate-to-source voltage (VGS) is applied to bias it into the on state, and when this voltage is applied to bias it into the on state.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.Normal operation requires that the DS breakdown voltage remain above 1200 V.For this transistor to work, a voltage 1200V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.

IXTP06N120P Features


the avalanche energy rating (Eas) is 50 mJ
a continuous drain current (ID) of 600mA
a drain-to-source breakdown voltage of 1.2kV voltage
the turn-off delay time is 50 ns
based on its rated peak drain current 1.2A.
single MOSFETs transistor is 30 Ω
a 1200V drain to source voltage (Vdss)


IXTP06N120P Applications


There are a lot of IXYS
IXTP06N120P applications of single MOSFETs transistors.


  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
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