IXTP06N120P
- Mfr.Part #
- IXTP06N120P
- Manufacturer
- Littelfuse
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 1200V 600MA TO220AB
- Stock
- 45,499
- In Stock :
- 45,499
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Minimum Operating Temperature :
- - 55 C
- Drain to Source Resistance :
- 30 Ω
- Product Status :
- Active
- Package / Case :
- TO-220-3
- Length :
- 10.66 mm
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Input Capacitance :
- 270 pF
- RoHS Status :
- ROHS3 Compliant
- Transistor Element Material :
- SILICON
- Avalanche Energy Rating (Eas) :
- 50 mJ
- RoHS :
- Details
- Product Category :
- MOSFET
- Pbfree Code :
- yes
- Number of Terminals :
- 3
- Vgs (Max) :
- ±20V
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Number of Elements :
- 1
- Factory Lead Time :
- 17 Weeks
- Min Operating Temperature :
- -55 °C
- Terminal Form :
- THROUGH-HOLE
- Width :
- 4.82 mm
- JEDEC-95 Code :
- TO-220AB
- Input Capacitance (Ciss) (Max) @ Vds :
- 270pF @ 25V
- Max Operating Temperature :
- 150 °C
- Transistor Application :
- SWITCHING
- JESD-30 Code :
- R-PSFM-T3
- FET Feature :
- --
- Transistor Type :
- 1 N-Channel
- Product Type :
- MOSFET
- Operating Temperature :
- -55°C~150°C TJ
- Pin Count :
- 3
- Drain Current-Max (Abs) (ID) :
- 0.6A
- Terminal Finish :
- Matte Tin (Sn)
- Element Configuration :
- Single
- Brand :
- IXYS
- Reach Compliance Code :
- Compliant
- Gate to Source Voltage (Vgs) :
- 20V
- Rds On (Max) @ Id, Vgs :
- 32 Ω @ 500mA, 10V
- Operating Mode :
- ENHANCEMENT MODE
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Channel Mode :
- Enhancement
- Gate Charge (Qg) (Max) @ Vgs :
- 13.3nC @ 10V
- Supplier Device Package :
- TO-220AB
- Drain to Source Breakdown Voltage :
- 1.2kV
- Manufacturer :
- IXYS
- Mounting Style :
- Through Hole
- Continuous Drain Current (ID) :
- 600mA
- Pulsed Drain Current-Max (IDM) :
- 1.2A
- Polarity/Channel Type :
- N-Channel
- Number of Channels :
- 1 Channel
- Packaging :
- Tube
- Base Product Number :
- IXTP06
- Lead Free :
- Lead Free
- Power Dissipation-Max (Abs) :
- 42 W
- Fall Time (Typ) :
- 27 ns
- ECCN Code :
- EAR99
- Number of Terminations :
- 3
- Transistor Polarity :
- N-Channel
- Power Dissipation-Max :
- 42W Tc
- DS Breakdown Voltage-Min :
- 1200 V
- Mount :
- Through Hole
- Mounting Type :
- Through Hole
- Drain-source On Resistance-Max :
- 34 Ω
- Surface Mount :
- No
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Vgs(th) (Max) @ Id :
- 4.5V @ 50μA
- Max Power Dissipation :
- 42 W
- Number of Pins :
- 3
- Drain to Source Voltage (Vdss) :
- 1200V
- Series :
- PolarVHV™
- Rds On Max :
- 32 Ω
- Published :
- 2007
- Power Dissipation (Max) :
- 42W (Tc)
- Current - Continuous Drain (Id) @ 25°C :
- 600mA Tc
- Configuration :
- Single
- Additional Feature :
- AVALANCHE RATED
- JESD-609 Code :
- e3
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Rise Time :
- 24ns
- Maximum Operating Temperature :
- + 150 C
- FET Type :
- N-Channel
- Case Connection :
- DRAIN
- Power Dissipation :
- 42W
- Height :
- 9.15 mm
- Turn-Off Delay Time :
- 50 ns
- Terminal Position :
- Single
- Package Shape :
- RECTANGULAR
- Package :
- Tube
- Qualification Status :
- Not Qualified
- Datasheets
- IXTP06N120P

N-Channel Tube 32 Ω @ 500mA, 10V ±20V 270pF @ 25V 13.3nC @ 10V 1200V TO-220-3
IXTP06N120P Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 50 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 270pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 600mA continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 1.2kV, and this device has a drainage-to-source breakdown voltage of 1.2kVV.Drain current refers to the maximum continuous current a device can conduct, and it is 0.6A.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 50 ns.Peak drain current is 1.2A, which is the maximum pulsed drain current.This device has a drain-to-source resistance of 30 Ω when a gate-to-source voltage (VGS) is applied to bias it into the on state, and when this voltage is applied to bias it into the on state.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.Normal operation requires that the DS breakdown voltage remain above 1200 V.For this transistor to work, a voltage 1200V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
IXTP06N120P Features
the avalanche energy rating (Eas) is 50 mJ
a continuous drain current (ID) of 600mA
a drain-to-source breakdown voltage of 1.2kV voltage
the turn-off delay time is 50 ns
based on its rated peak drain current 1.2A.
single MOSFETs transistor is 30 Ω
a 1200V drain to source voltage (Vdss)
IXTP06N120P Applications
There are a lot of IXYS
IXTP06N120P applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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