IXTP05N100

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation :

40W

Number of Terminals :

3

Pbfree Code :

yes

JESD-609 Code :

e3

Polarity/Channel Type :

N-Channel

FET Type :

N-Channel

Pulsed Drain Current-Max (IDM) :

3A

Gate to Source Voltage (Vgs) :

30V

Product Category :

MOSFET

Transistor Polarity :

N-Channel

Width :

4.83 mm

Number of Terminations :

3

Qualification Status :

Not Qualified

Pin Count :

3

Terminal Position :

Single

Minimum Operating Temperature :

- 55 C

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Factory Lead Time :

24 Weeks

JEDEC-95 Code :

TO-220AB

Current - Continuous Drain (Id) @ 25°C :

750mA Tc

Terminal Form :

THROUGH-HOLE

Vgs(th) (Max) @ Id :

4.5V @ 250μA

Package / Case :

TO-220-3

Mounting Type :

Through Hole

Avalanche Energy Rating (Eas) :

100 mJ

Transistor Type :

1 N-Channel

Power Dissipation-Max :

40W Tc

Height :

16 mm

Mounting Style :

Through Hole

Brand :

IXYS

Drive Voltage (Max Rds On,Min Rds On) :

10V

Channel Mode :

Enhancement

Configuration :

Single

Continuous Drain Current (ID) :

750mA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Additional Feature :

AVALANCHE RATED

Power Dissipation (Max) :

40W (Tc)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

JESD-30 Code :

R-PSFM-T3

Rds On (Max) @ Id, Vgs :

17 Ω @ 375mA, 10V

Fall Time (Typ) :

28 ns

Manufacturer :

IXYS

Resistance :

17Ohm

Gate Charge (Qg) (Max) @ Vgs :

7.8nC @ 10V

Package Shape :

RECTANGULAR

Supplier Device Package :

TO-220AB

Terminal Finish :

Matte Tin (Sn)

Type :

High Voltage Power MOSFET

Number of Pins :

3

Package :

Tube

Packaging :

Tube

Published :

2005

Product Type :

MOSFET

Product Status :

Active

FET Feature :

--

Drain to Source Breakdown Voltage :

1kV

Rise Time :

19ns

ECCN Code :

EAR99

Input Capacitance (Ciss) (Max) @ Vds :

260pF @ 25V

Turn-Off Delay Time :

40 ns

Power Dissipation-Max (Abs) :

40 W

DS Breakdown Voltage-Min :

1000 V

Drain-source On Resistance-Max :

17 Ω

Drain to Source Voltage (Vdss) :

1000V

Operating Temperature :

-55°C~150°C TJ

Maximum Operating Temperature :

+ 150 C

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Element Configuration :

Single

Transistor Element Material :

SILICON

Surface Mount :

No

Number of Channels :

1 Channel

RoHS :

Details

Reach Compliance Code :

Compliant

RoHS Status :

ROHS3 Compliant

Operating Mode :

ENHANCEMENT MODE

Case Connection :

DRAIN

Transistor Application :

SWITCHING

Vgs (Max) :

±30V

Series :

--

Mount :

Through Hole

Lead Free :

Lead Free

Number of Elements :

1

Base Product Number :

IXTP05

Length :

10.41 mm

Drain Current-Max (Abs) (ID) :

0.75A