IXTP10N60PM
- Mfr.Part #
- IXTP10N60PM
- Manufacturer
- Littelfuse
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 5A TO220AB
- Stock
- 6,308
- In Stock :
- 6,308
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Terminal Form :
- THROUGH-HOLE
- Mount :
- Through Hole
- Supplier Device Package :
- TO-220AB
- Current Rating :
- 10A
- Drain to Source Breakdown Voltage :
- 600V
- Pin Count :
- 3
- Lead Free :
- Lead Free
- Package Shape :
- RECTANGULAR
- Polarity/Channel Type :
- N-Channel
- Case Connection :
- Isolated
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Input Capacitance (Ciss) (Max) @ Vds :
- 1610pF @ 25V
- JEDEC-95 Code :
- TO-220AB
- Mounting Type :
- Through Hole
- Drain Current-Max (Abs) (ID) :
- 5A
- JESD-30 Code :
- R-PSFM-T3
- Transistor Application :
- SWITCHING
- Series :
- PolarHV™
- Number of Elements :
- 1
- Operating Mode :
- ENHANCEMENT MODE
- Gate to Source Voltage (Vgs) :
- 30V
- JESD-609 Code :
- e3
- DS Breakdown Voltage-Min :
- 600 V
- FET Feature :
- --
- Terminal Finish :
- Matte Tin (Sn)
- Qualification Status :
- Not Qualified
- Product Status :
- Active
- Turn-Off Delay Time :
- 55 ns
- Pulsed Drain Current-Max (IDM) :
- 30 A
- Avalanche Energy Rating (Eas) :
- 500 mJ
- Terminal Position :
- Single
- Number of Terminals :
- 3
- Power Dissipation (Max) :
- 50W (Tc)
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Continuous Drain Current (ID) :
- 5A
- Package :
- Tube
- Transistor Element Material :
- SILICON
- Package / Case :
- TO-220-3
- Number of Terminations :
- 3
- RoHS Status :
- ROHS3 Compliant
- Drain to Source Voltage (Vdss) :
- 600V
- Vgs (Max) :
- ±30V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Rds On (Max) @ Id, Vgs :
- 740m Ω @ 5A, 10V
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Manufacturer :
- IXYS Corporation
- Power Dissipation-Max :
- 50W Tc
- Gate Charge (Qg) (Max) @ Vgs :
- 32nC @ 10V
- Base Product Number :
- IXTP10
- Voltage - Rated DC :
- 600V
- Operating Temperature :
- -55°C~150°C TJ
- Fall Time (Typ) :
- 18 ns
- Additional Feature :
- AVALANCHE RATED
- Published :
- 2006
- Reach Compliance Code :
- Compliant
- Packaging :
- Tube
- Vgs(th) (Max) @ Id :
- 5V @ 100µA
- Pbfree Code :
- yes
- Rise Time :
- 24ns
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Element Configuration :
- Single
- Current - Continuous Drain (Id) @ 25°C :
- 5A Tc
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- FET Type :
- N-Channel
- Surface Mount :
- No
- Drain-source On Resistance-Max :
- 0.74Ohm
- Power Dissipation :
- 50W
- Number of Pins :
- 3
- Datasheets
- IXTP10N60PM

N-Channel Tube 740m Ω @ 5A, 10V ±30V 1610pF @ 25V 32nC @ 10V 600V TO-220-3
IXTP10N60PM Overview
There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 500 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 1610pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 5A amps.In this device, the drain-source breakdown voltage is 600V and VGS=600V, so the drain-source breakdown voltage is 600V in this case.A device can conduct a maximum continuous current of [5A] according to its drain current.It is [55 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 30 A.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.The DS breakdown voltage should be maintained above 600 V to maintain normal operation.To operate this transistor, you will need a 600V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).
IXTP10N60PM Features
the avalanche energy rating (Eas) is 500 mJ
a continuous drain current (ID) of 5A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 55 ns
based on its rated peak drain current 30 A.
a 600V drain to source voltage (Vdss)
IXTP10N60PM Applications
There are a lot of IXYS
IXTP10N60PM applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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