IXTP10N60PM

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Mfr.Part #
IXTP10N60PM
Manufacturer
Littelfuse
Package / Case
TO-220-3
Datasheet
Download
Description
MOSFET N-CH 600V 5A TO220AB
Stock
6,308
In Stock :
6,308

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Terminal Form :
THROUGH-HOLE
Mount :
Through Hole
Supplier Device Package :
TO-220AB
Current Rating :
10A
Drain to Source Breakdown Voltage :
600V
Pin Count :
3
Lead Free :
Lead Free
Package Shape :
RECTANGULAR
Polarity/Channel Type :
N-Channel
Case Connection :
Isolated
Configuration :
SINGLE WITH BUILT-IN DIODE
Input Capacitance (Ciss) (Max) @ Vds :
1610pF @ 25V
JEDEC-95 Code :
TO-220AB
Mounting Type :
Through Hole
Drain Current-Max (Abs) (ID) :
5A
JESD-30 Code :
R-PSFM-T3
Transistor Application :
SWITCHING
Series :
PolarHV™
Number of Elements :
1
Operating Mode :
ENHANCEMENT MODE
Gate to Source Voltage (Vgs) :
30V
JESD-609 Code :
e3
DS Breakdown Voltage-Min :
600 V
FET Feature :
--
Terminal Finish :
Matte Tin (Sn)
Qualification Status :
Not Qualified
Product Status :
Active
Turn-Off Delay Time :
55 ns
Pulsed Drain Current-Max (IDM) :
30 A
Avalanche Energy Rating (Eas) :
500 mJ
Terminal Position :
Single
Number of Terminals :
3
Power Dissipation (Max) :
50W (Tc)
Drive Voltage (Max Rds On,Min Rds On) :
10V
Continuous Drain Current (ID) :
5A
Package :
Tube
Transistor Element Material :
SILICON
Package / Case :
TO-220-3
Number of Terminations :
3
RoHS Status :
ROHS3 Compliant
Drain to Source Voltage (Vdss) :
600V
Vgs (Max) :
±30V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Rds On (Max) @ Id, Vgs :
740m Ω @ 5A, 10V
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Manufacturer :
IXYS Corporation
Power Dissipation-Max :
50W Tc
Gate Charge (Qg) (Max) @ Vgs :
32nC @ 10V
Base Product Number :
IXTP10
Voltage - Rated DC :
600V
Operating Temperature :
-55°C~150°C TJ
Fall Time (Typ) :
18 ns
Additional Feature :
AVALANCHE RATED
Published :
2006
Reach Compliance Code :
Compliant
Packaging :
Tube
Vgs(th) (Max) @ Id :
5V @ 100µA
Pbfree Code :
yes
Rise Time :
24ns
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Element Configuration :
Single
Current - Continuous Drain (Id) @ 25°C :
5A Tc
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
FET Type :
N-Channel
Surface Mount :
No
Drain-source On Resistance-Max :
0.74Ohm
Power Dissipation :
50W
Number of Pins :
3
Datasheets
IXTP10N60PM
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTP10N60PM from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Package / Case:TO-220-3, Number of Terminations:3, Operating Temperature:-55°C~150°C TJ, Number of Pins:3, IXTP10N60PM pinout, IXTP10N60PM datasheet PDF, IXTP10N60PM amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTP10N60PM ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTP10N60PM


N-Channel Tube 740m Ω @ 5A, 10V ±30V 1610pF @ 25V 32nC @ 10V 600V TO-220-3

IXTP10N60PM Overview


There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 500 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 1610pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 5A amps.In this device, the drain-source breakdown voltage is 600V and VGS=600V, so the drain-source breakdown voltage is 600V in this case.A device can conduct a maximum continuous current of [5A] according to its drain current.It is [55 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 30 A.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.The DS breakdown voltage should be maintained above 600 V to maintain normal operation.To operate this transistor, you will need a 600V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).

IXTP10N60PM Features


the avalanche energy rating (Eas) is 500 mJ
a continuous drain current (ID) of 5A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 55 ns
based on its rated peak drain current 30 A.
a 600V drain to source voltage (Vdss)


IXTP10N60PM Applications


There are a lot of IXYS
IXTP10N60PM applications of single MOSFETs transistors.


  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
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