IXTP01N100D

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Mfr.Part #
IXTP01N100D
Manufacturer
Littelfuse
Package / Case
TO-220-3
Datasheet
Download
Description
MOSFET N-CH 1000V 400MA TO220AB
Stock
37,070
In Stock :
37,070

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Polarity/Channel Type :
N-Channel
Supplier Device Package :
TO-220AB
Power Dissipation :
1.1W
Maximum Operating Temperature :
+ 150 C
Vgs(th) (Max) @ Id :
--
Terminal Position :
Single
Gate Charge (Qg) (Max) @ Vgs :
5.8 nC @ 5 V
Drive Voltage (Max Rds On, Min Rds On) :
--
Drain to Source Breakdown Voltage :
1kV
Terminal Finish :
PURE TIN
Pin Count :
3
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Packaging :
Tube
Reach Compliance Code :
Compliant
Number of Channels :
1 Channel
ECCN Code :
EAR99
Product Type :
MOSFET
RoHS :
Details
Package :
Tube
Operating Mode :
Depletion Mode
Moisture Sensitivity Level (MSL) :
Not Applicable
Lead Free :
Lead Free
Factory Lead Time :
8 Weeks
Radiation Hardening :
No
Current Rating :
4A
Transistor Polarity :
N-Channel
DS Breakdown Voltage-Min :
1000 V
Input Capacitance (Ciss) (Max) @ Vds :
120pF @ 25V
Surface Mount :
No
Voltage - Rated DC :
1kV
Transistor Element Material :
SILICON
Drain-source On Resistance-Max :
110 Ω
Transistor Type :
1 N-Channel
Channel Mode :
Depletion
Number of Terminations :
3
Number of Pins :
3
Length :
10.66 mm
Height :
9.15 mm
Qualification Status :
Not Qualified
Gate to Source Voltage (Vgs) :
20V
Package / Case :
TO-220-3
Base Product Number :
IXTP01
Package Shape :
RECTANGULAR
Published :
2001
Rise Time :
6ns
JESD-30 Code :
R-PSFM-T3
Pulsed Drain Current-Max (IDM) :
0.4 A
FET Type :
N-Channel
Power Dissipation (Max) :
1.1W (Ta), 25W (Tc)
Mounting Type :
Through Hole
Power Dissipation-Max (Abs) :
25 W
Number of Terminals :
3
Current - Continuous Drain (Id) @ 25°C :
100mA Tc
Series :
--
Power Dissipation-Max :
1.1W Ta 25W Tc
Product Status :
Active
JESD-609 Code :
e3
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Case Connection :
DRAIN
Terminal Form :
THROUGH-HOLE
Minimum Operating Temperature :
- 55 C
Rds On (Max) @ Id, Vgs :
110 Ω @ 50mA, 0V
Operating Temperature :
-55°C~150°C TJ
Element Configuration :
Single
HTS Code :
8541.29.00.95
Continuous Drain Current (ID) :
100mA
Vgs (Max) :
±20V
FET Feature :
Depletion Mode
Transistor Application :
SWITCHING
Product Category :
MOSFET
RoHS Status :
ROHS3 Compliant
Mounting Style :
Through Hole
Number of Elements :
1
Turn-Off Delay Time :
30 ns
JEDEC-95 Code :
TO-220AD
Drain to Source Voltage (Vdss) :
1000V
Mount :
Through Hole
Width :
4.83 mm
Configuration :
Single
Manufacturer :
IXYS
Pbfree Code :
yes
Brand :
IXYS
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTP01N100D from Chip IC,where excellence meets affordability. This product stands out with its Number of Channels:1 Channel, Number of Terminations:3, Number of Pins:3, Package / Case:TO-220-3, Mounting Type:Through Hole, Operating Temperature:-55°C~150°C TJ, IXTP01N100D pinout, IXTP01N100D datasheet PDF, IXTP01N100D amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTP01N100D ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTP01N100D


N-Channel Tube 110 Ω @ 50mA, 0V ±20V 120pF @ 25V 5.8 nC @ 5 V 1000V TO-220-3

IXTP01N100D Overview


With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 120pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 100mA.With a drain-source breakdown voltage of 1kV and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 1kV.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 30 ns.Peak drain current for this device is 0.4 A, which is its maximum pulsed drain current.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.To maintain normal operation, the DS breakdown voltage should be kept above 1000 V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 1000V.

IXTP01N100D Features


a continuous drain current (ID) of 100mA
a drain-to-source breakdown voltage of 1kV voltage
the turn-off delay time is 30 ns
based on its rated peak drain current 0.4 A.
a 1000V drain to source voltage (Vdss)


IXTP01N100D Applications


There are a lot of IXYS
IXTP01N100D applications of single MOSFETs transistors.


  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
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