IXTP01N100D

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Mfr.Part #
IXTP01N100D
Manufacturer
Littelfuse
Package / Case
TO-220-3
Datasheet
Download
Description
MOSFET N-CH 1000V 400MA TO220AB
Stock
37,070
In Stock :
37,070

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Voltage - Rated DC :
1kV
Surface Mount :
No
Mount :
Through Hole
Input Capacitance (Ciss) (Max) @ Vds :
120pF @ 25V
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Pin Count :
3
Current Rating :
4A
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Case Connection :
DRAIN
Continuous Drain Current (ID) :
100mA
Power Dissipation (Max) :
1.1W (Ta), 25W (Tc)
Drain to Source Breakdown Voltage :
1kV
Operating Mode :
Depletion Mode
Vgs(th) (Max) @ Id :
--
Packaging :
Tube
Polarity/Channel Type :
N-Channel
Width :
4.83 mm
Mounting Type :
Through Hole
Transistor Element Material :
SILICON
Power Dissipation-Max (Abs) :
25 W
Operating Temperature :
-55°C~150°C TJ
Gate Charge (Qg) (Max) @ Vgs :
5.8 nC @ 5 V
Series :
--
Mounting Style :
Through Hole
Number of Terminals :
3
Terminal Position :
Single
ECCN Code :
EAR99
Radiation Hardening :
No
Package / Case :
TO-220-3
Number of Channels :
1 Channel
Turn-Off Delay Time :
30 ns
JESD-30 Code :
R-PSFM-T3
FET Feature :
Depletion Mode
Power Dissipation-Max :
1.1W Ta 25W Tc
Drive Voltage (Max Rds On, Min Rds On) :
--
Current - Continuous Drain (Id) @ 25°C :
100mA Tc
RoHS Status :
ROHS3 Compliant
Transistor Type :
1 N-Channel
Lead Free :
Lead Free
Package :
Tube
Factory Lead Time :
8 Weeks
Pbfree Code :
yes
Rds On (Max) @ Id, Vgs :
110 Ω @ 50mA, 0V
HTS Code :
8541.29.00.95
Moisture Sensitivity Level (MSL) :
Not Applicable
Minimum Operating Temperature :
- 55 C
Height :
9.15 mm
Pulsed Drain Current-Max (IDM) :
0.4 A
RoHS :
Details
Element Configuration :
Single
Drain-source On Resistance-Max :
110 Ω
Product Type :
MOSFET
Power Dissipation :
1.1W
Rise Time :
6ns
Transistor Application :
SWITCHING
Drain to Source Voltage (Vdss) :
1000V
Length :
10.66 mm
Configuration :
Single
Terminal Form :
THROUGH-HOLE
Package Shape :
RECTANGULAR
Product Status :
Active
Transistor Polarity :
N-Channel
Manufacturer :
IXYS
Gate to Source Voltage (Vgs) :
20V
Number of Terminations :
3
Number of Pins :
3
Maximum Operating Temperature :
+ 150 C
FET Type :
N-Channel
JEDEC-95 Code :
TO-220AD
Supplier Device Package :
TO-220AB
Qualification Status :
Not Qualified
Reach Compliance Code :
Compliant
Brand :
IXYS
Base Product Number :
IXTP01
Channel Mode :
Depletion
Vgs (Max) :
±20V
Terminal Finish :
PURE TIN
DS Breakdown Voltage-Min :
1000 V
Published :
2001
Product Category :
MOSFET
JESD-609 Code :
e3
Number of Elements :
1
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTP01N100D from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Operating Temperature:-55°C~150°C TJ, Package / Case:TO-220-3, Number of Channels:1 Channel, Number of Terminations:3, Number of Pins:3, IXTP01N100D pinout, IXTP01N100D datasheet PDF, IXTP01N100D amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTP01N100D ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTP01N100D


N-Channel Tube 110 Ω @ 50mA, 0V ±20V 120pF @ 25V 5.8 nC @ 5 V 1000V TO-220-3

IXTP01N100D Overview


With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 120pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 100mA.With a drain-source breakdown voltage of 1kV and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 1kV.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 30 ns.Peak drain current for this device is 0.4 A, which is its maximum pulsed drain current.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.To maintain normal operation, the DS breakdown voltage should be kept above 1000 V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 1000V.

IXTP01N100D Features


a continuous drain current (ID) of 100mA
a drain-to-source breakdown voltage of 1kV voltage
the turn-off delay time is 30 ns
based on its rated peak drain current 0.4 A.
a 1000V drain to source voltage (Vdss)


IXTP01N100D Applications


There are a lot of IXYS
IXTP01N100D applications of single MOSFETs transistors.


  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
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