IXTP01N100D
- Mfr.Part #
- IXTP01N100D
- Manufacturer
- Littelfuse
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 1000V 400MA TO220AB
- Stock
- 37,070
- In Stock :
- 37,070
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Product Category :
- MOSFET
- Voltage - Rated DC :
- 1kV
- Gate to Source Voltage (Vgs) :
- 20V
- Transistor Element Material :
- SILICON
- Terminal Position :
- Single
- JESD-609 Code :
- e3
- RoHS Status :
- ROHS3 Compliant
- Reach Compliance Code :
- Compliant
- Transistor Application :
- SWITCHING
- Operating Mode :
- Depletion Mode
- Drive Voltage (Max Rds On, Min Rds On) :
- --
- Package :
- Tube
- Package Shape :
- RECTANGULAR
- FET Type :
- N-Channel
- Terminal Form :
- THROUGH-HOLE
- Power Dissipation-Max (Abs) :
- 25 W
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- ECCN Code :
- EAR99
- Case Connection :
- DRAIN
- Transistor Type :
- 1 N-Channel
- Surface Mount :
- No
- Vgs(th) (Max) @ Id :
- --
- Packaging :
- Tube
- Width :
- 4.83 mm
- Published :
- 2001
- Drain-source On Resistance-Max :
- 110 Ω
- Series :
- --
- Configuration :
- Single
- Manufacturer :
- IXYS
- JESD-30 Code :
- R-PSFM-T3
- Polarity/Channel Type :
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 5.8 nC @ 5 V
- Operating Temperature :
- -55°C~150°C TJ
- Continuous Drain Current (ID) :
- 100mA
- Input Capacitance (Ciss) (Max) @ Vds :
- 120pF @ 25V
- Number of Elements :
- 1
- Power Dissipation (Max) :
- 1.1W (Ta), 25W (Tc)
- Supplier Device Package :
- TO-220AB
- Rds On (Max) @ Id, Vgs :
- 110 Ω @ 50mA, 0V
- Number of Terminals :
- 3
- Current - Continuous Drain (Id) @ 25°C :
- 100mA Tc
- FET Feature :
- Depletion Mode
- JEDEC-95 Code :
- TO-220AD
- Number of Terminations :
- 3
- Minimum Operating Temperature :
- - 55 C
- Drain to Source Voltage (Vdss) :
- 1000V
- Product Status :
- Active
- Moisture Sensitivity Level (MSL) :
- Not Applicable
- Mounting Style :
- Through Hole
- Product Type :
- MOSFET
- DS Breakdown Voltage-Min :
- 1000 V
- Vgs (Max) :
- ±20V
- Radiation Hardening :
- No
- Qualification Status :
- Not Qualified
- HTS Code :
- 8541.29.00.95
- Number of Channels :
- 1 Channel
- Maximum Operating Temperature :
- + 150 C
- Channel Mode :
- Depletion
- Turn-Off Delay Time :
- 30 ns
- Factory Lead Time :
- 8 Weeks
- Current Rating :
- 4A
- Element Configuration :
- Single
- Pulsed Drain Current-Max (IDM) :
- 0.4 A
- RoHS :
- Details
- Pin Count :
- 3
- Power Dissipation-Max :
- 1.1W Ta 25W Tc
- Mount :
- Through Hole
- Terminal Finish :
- PURE TIN
- Pbfree Code :
- yes
- Transistor Polarity :
- N-Channel
- Length :
- 10.66 mm
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Power Dissipation :
- 1.1W
- Lead Free :
- Lead Free
- Height :
- 9.15 mm
- Base Product Number :
- IXTP01
- Number of Pins :
- 3
- Package / Case :
- TO-220-3
- Mounting Type :
- Through Hole
- Brand :
- IXYS
- Rise Time :
- 6ns
- Drain to Source Breakdown Voltage :
- 1kV
- Datasheets
- IXTP01N100D
IXTP01N100D Documents

N-Channel Tube 110 Ω @ 50mA, 0V ±20V 120pF @ 25V 5.8 nC @ 5 V 1000V TO-220-3
IXTP01N100D Overview
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 120pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 100mA.With a drain-source breakdown voltage of 1kV and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 1kV.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 30 ns.Peak drain current for this device is 0.4 A, which is its maximum pulsed drain current.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.To maintain normal operation, the DS breakdown voltage should be kept above 1000 V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 1000V.
IXTP01N100D Features
a continuous drain current (ID) of 100mA
a drain-to-source breakdown voltage of 1kV voltage
the turn-off delay time is 30 ns
based on its rated peak drain current 0.4 A.
a 1000V drain to source voltage (Vdss)
IXTP01N100D Applications
There are a lot of IXYS
IXTP01N100D applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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