IXTP01N100D
- Mfr.Part #
- IXTP01N100D
- Manufacturer
- Littelfuse
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 1000V 400MA TO220AB
- Stock
- 37,070
- In Stock :
- 37,070
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Voltage - Rated DC :
- 1kV
- Surface Mount :
- No
- Mount :
- Through Hole
- Input Capacitance (Ciss) (Max) @ Vds :
- 120pF @ 25V
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Pin Count :
- 3
- Current Rating :
- 4A
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Case Connection :
- DRAIN
- Continuous Drain Current (ID) :
- 100mA
- Power Dissipation (Max) :
- 1.1W (Ta), 25W (Tc)
- Drain to Source Breakdown Voltage :
- 1kV
- Operating Mode :
- Depletion Mode
- Vgs(th) (Max) @ Id :
- --
- Packaging :
- Tube
- Polarity/Channel Type :
- N-Channel
- Width :
- 4.83 mm
- Mounting Type :
- Through Hole
- Transistor Element Material :
- SILICON
- Power Dissipation-Max (Abs) :
- 25 W
- Operating Temperature :
- -55°C~150°C TJ
- Gate Charge (Qg) (Max) @ Vgs :
- 5.8 nC @ 5 V
- Series :
- --
- Mounting Style :
- Through Hole
- Number of Terminals :
- 3
- Terminal Position :
- Single
- ECCN Code :
- EAR99
- Radiation Hardening :
- No
- Package / Case :
- TO-220-3
- Number of Channels :
- 1 Channel
- Turn-Off Delay Time :
- 30 ns
- JESD-30 Code :
- R-PSFM-T3
- FET Feature :
- Depletion Mode
- Power Dissipation-Max :
- 1.1W Ta 25W Tc
- Drive Voltage (Max Rds On, Min Rds On) :
- --
- Current - Continuous Drain (Id) @ 25°C :
- 100mA Tc
- RoHS Status :
- ROHS3 Compliant
- Transistor Type :
- 1 N-Channel
- Lead Free :
- Lead Free
- Package :
- Tube
- Factory Lead Time :
- 8 Weeks
- Pbfree Code :
- yes
- Rds On (Max) @ Id, Vgs :
- 110 Ω @ 50mA, 0V
- HTS Code :
- 8541.29.00.95
- Moisture Sensitivity Level (MSL) :
- Not Applicable
- Minimum Operating Temperature :
- - 55 C
- Height :
- 9.15 mm
- Pulsed Drain Current-Max (IDM) :
- 0.4 A
- RoHS :
- Details
- Element Configuration :
- Single
- Drain-source On Resistance-Max :
- 110 Ω
- Product Type :
- MOSFET
- Power Dissipation :
- 1.1W
- Rise Time :
- 6ns
- Transistor Application :
- SWITCHING
- Drain to Source Voltage (Vdss) :
- 1000V
- Length :
- 10.66 mm
- Configuration :
- Single
- Terminal Form :
- THROUGH-HOLE
- Package Shape :
- RECTANGULAR
- Product Status :
- Active
- Transistor Polarity :
- N-Channel
- Manufacturer :
- IXYS
- Gate to Source Voltage (Vgs) :
- 20V
- Number of Terminations :
- 3
- Number of Pins :
- 3
- Maximum Operating Temperature :
- + 150 C
- FET Type :
- N-Channel
- JEDEC-95 Code :
- TO-220AD
- Supplier Device Package :
- TO-220AB
- Qualification Status :
- Not Qualified
- Reach Compliance Code :
- Compliant
- Brand :
- IXYS
- Base Product Number :
- IXTP01
- Channel Mode :
- Depletion
- Vgs (Max) :
- ±20V
- Terminal Finish :
- PURE TIN
- DS Breakdown Voltage-Min :
- 1000 V
- Published :
- 2001
- Product Category :
- MOSFET
- JESD-609 Code :
- e3
- Number of Elements :
- 1
- Datasheets
- IXTP01N100D
IXTP01N100D Documents

N-Channel Tube 110 Ω @ 50mA, 0V ±20V 120pF @ 25V 5.8 nC @ 5 V 1000V TO-220-3
IXTP01N100D Overview
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 120pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 100mA.With a drain-source breakdown voltage of 1kV and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 1kV.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 30 ns.Peak drain current for this device is 0.4 A, which is its maximum pulsed drain current.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.To maintain normal operation, the DS breakdown voltage should be kept above 1000 V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 1000V.
IXTP01N100D Features
a continuous drain current (ID) of 100mA
a drain-to-source breakdown voltage of 1kV voltage
the turn-off delay time is 30 ns
based on its rated peak drain current 0.4 A.
a 1000V drain to source voltage (Vdss)
IXTP01N100D Applications
There are a lot of IXYS
IXTP01N100D applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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