IXTP01N100D

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Mfr.Part #
IXTP01N100D
Manufacturer
Littelfuse
Package / Case
TO-220-3
Datasheet
Download
Description
MOSFET N-CH 1000V 400MA TO220AB
Stock
37,070
In Stock :
37,070

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Turn-Off Delay Time :
30 ns
Series :
--
Pulsed Drain Current-Max (IDM) :
0.4 A
Mounting Type :
Through Hole
Channel Mode :
Depletion
Rds On (Max) @ Id, Vgs :
110 Ω @ 50mA, 0V
Packaging :
Tube
Transistor Element Material :
SILICON
DS Breakdown Voltage-Min :
1000 V
Moisture Sensitivity Level (MSL) :
Not Applicable
Reach Compliance Code :
Compliant
Continuous Drain Current (ID) :
100mA
Number of Terminations :
3
Transistor Application :
SWITCHING
Mounting Style :
Through Hole
Manufacturer :
IXYS
RoHS Status :
ROHS3 Compliant
FET Feature :
Depletion Mode
ECCN Code :
EAR99
Radiation Hardening :
No
Element Configuration :
Single
Product Category :
MOSFET
Package / Case :
TO-220-3
Package Shape :
RECTANGULAR
Transistor Polarity :
N-Channel
Drain-source On Resistance-Max :
110 Ω
Lead Free :
Lead Free
Terminal Position :
Single
RoHS :
Details
Qualification Status :
Not Qualified
Pin Count :
3
Length :
10.66 mm
Product Status :
Active
Operating Temperature :
-55°C~150°C TJ
Polarity/Channel Type :
N-Channel
Terminal Form :
THROUGH-HOLE
Number of Elements :
1
Gate Charge (Qg) (Max) @ Vgs :
5.8 nC @ 5 V
Product Type :
MOSFET
Brand :
IXYS
Pbfree Code :
yes
HTS Code :
8541.29.00.95
Published :
2001
Factory Lead Time :
8 Weeks
Gate to Source Voltage (Vgs) :
20V
Configuration :
Single
Drive Voltage (Max Rds On, Min Rds On) :
--
Number of Channels :
1 Channel
Drain to Source Voltage (Vdss) :
1000V
Minimum Operating Temperature :
- 55 C
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Power Dissipation-Max :
1.1W Ta 25W Tc
Supplier Device Package :
TO-220AB
JESD-609 Code :
e3
Power Dissipation (Max) :
1.1W (Ta), 25W (Tc)
Width :
4.83 mm
Height :
9.15 mm
Operating Mode :
Depletion Mode
FET Type :
N-Channel
Current Rating :
4A
Vgs(th) (Max) @ Id :
--
Input Capacitance (Ciss) (Max) @ Vds :
120pF @ 25V
JESD-30 Code :
R-PSFM-T3
Number of Pins :
3
Base Product Number :
IXTP01
Voltage - Rated DC :
1kV
Maximum Operating Temperature :
+ 150 C
Vgs (Max) :
±20V
Transistor Type :
1 N-Channel
Case Connection :
DRAIN
Package :
Tube
Number of Terminals :
3
Current - Continuous Drain (Id) @ 25°C :
100mA Tc
JEDEC-95 Code :
TO-220AD
Drain to Source Breakdown Voltage :
1kV
Power Dissipation :
1.1W
Terminal Finish :
PURE TIN
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Mount :
Through Hole
Power Dissipation-Max (Abs) :
25 W
Rise Time :
6ns
Surface Mount :
No
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTP01N100D from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Number of Terminations:3, Package / Case:TO-220-3, Operating Temperature:-55°C~150°C TJ, Number of Channels:1 Channel, Number of Pins:3, IXTP01N100D pinout, IXTP01N100D datasheet PDF, IXTP01N100D amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTP01N100D ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTP01N100D


N-Channel Tube 110 Ω @ 50mA, 0V ±20V 120pF @ 25V 5.8 nC @ 5 V 1000V TO-220-3

IXTP01N100D Overview


With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 120pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 100mA.With a drain-source breakdown voltage of 1kV and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 1kV.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 30 ns.Peak drain current for this device is 0.4 A, which is its maximum pulsed drain current.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.To maintain normal operation, the DS breakdown voltage should be kept above 1000 V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 1000V.

IXTP01N100D Features


a continuous drain current (ID) of 100mA
a drain-to-source breakdown voltage of 1kV voltage
the turn-off delay time is 30 ns
based on its rated peak drain current 0.4 A.
a 1000V drain to source voltage (Vdss)


IXTP01N100D Applications


There are a lot of IXYS
IXTP01N100D applications of single MOSFETs transistors.


  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
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