IXTP01N100D

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Mfr.Part #
IXTP01N100D
Manufacturer
Littelfuse
Package / Case
TO-220-3
Datasheet
Download
Description
MOSFET N-CH 1000V 400MA TO220AB
Stock
37,070
In Stock :
37,070

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Transistor Application :
SWITCHING
Drain to Source Breakdown Voltage :
1kV
RoHS Status :
ROHS3 Compliant
Operating Temperature :
-55°C~150°C TJ
Vgs(th) (Max) @ Id :
--
Maximum Operating Temperature :
+ 150 C
Lead Free :
Lead Free
ECCN Code :
EAR99
JESD-609 Code :
e3
Power Dissipation (Max) :
1.1W (Ta), 25W (Tc)
Gate Charge (Qg) (Max) @ Vgs :
5.8 nC @ 5 V
Pbfree Code :
yes
Package / Case :
TO-220-3
Terminal Position :
Single
Surface Mount :
No
Rds On (Max) @ Id, Vgs :
110 Ω @ 50mA, 0V
Transistor Element Material :
SILICON
Package Shape :
RECTANGULAR
HTS Code :
8541.29.00.95
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Case Connection :
DRAIN
Series :
--
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Polarity/Channel Type :
N-Channel
JESD-30 Code :
R-PSFM-T3
Channel Mode :
Depletion
Number of Terminals :
3
FET Feature :
Depletion Mode
Terminal Finish :
PURE TIN
Product Status :
Active
Supplier Device Package :
TO-220AB
Brand :
IXYS
Number of Pins :
3
Drive Voltage (Max Rds On, Min Rds On) :
--
Power Dissipation-Max :
1.1W Ta 25W Tc
JEDEC-95 Code :
TO-220AD
Number of Terminations :
3
Power Dissipation :
1.1W
Current - Continuous Drain (Id) @ 25°C :
100mA Tc
Drain-source On Resistance-Max :
110 Ω
Voltage - Rated DC :
1kV
Number of Elements :
1
Power Dissipation-Max (Abs) :
25 W
Terminal Form :
THROUGH-HOLE
Gate to Source Voltage (Vgs) :
20V
Vgs (Max) :
±20V
Pulsed Drain Current-Max (IDM) :
0.4 A
Packaging :
Tube
Package :
Tube
Input Capacitance (Ciss) (Max) @ Vds :
120pF @ 25V
RoHS :
Details
Product Type :
MOSFET
Factory Lead Time :
8 Weeks
Mount :
Through Hole
Reach Compliance Code :
Compliant
Manufacturer :
IXYS
Operating Mode :
Depletion Mode
Current Rating :
4A
DS Breakdown Voltage-Min :
1000 V
Height :
9.15 mm
Rise Time :
6ns
Configuration :
Single
Continuous Drain Current (ID) :
100mA
Moisture Sensitivity Level (MSL) :
Not Applicable
Radiation Hardening :
No
Pin Count :
3
Mounting Type :
Through Hole
Transistor Type :
1 N-Channel
Published :
2001
FET Type :
N-Channel
Mounting Style :
Through Hole
Transistor Polarity :
N-Channel
Minimum Operating Temperature :
- 55 C
Product Category :
MOSFET
Width :
4.83 mm
Number of Channels :
1 Channel
Drain to Source Voltage (Vdss) :
1000V
Turn-Off Delay Time :
30 ns
Base Product Number :
IXTP01
Qualification Status :
Not Qualified
Element Configuration :
Single
Length :
10.66 mm
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTP01N100D from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Package / Case:TO-220-3, Number of Pins:3, Number of Terminations:3, Mounting Type:Through Hole, Number of Channels:1 Channel, IXTP01N100D pinout, IXTP01N100D datasheet PDF, IXTP01N100D amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTP01N100D ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTP01N100D


N-Channel Tube 110 Ω @ 50mA, 0V ±20V 120pF @ 25V 5.8 nC @ 5 V 1000V TO-220-3

IXTP01N100D Overview


With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 120pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 100mA.With a drain-source breakdown voltage of 1kV and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 1kV.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 30 ns.Peak drain current for this device is 0.4 A, which is its maximum pulsed drain current.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.To maintain normal operation, the DS breakdown voltage should be kept above 1000 V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 1000V.

IXTP01N100D Features


a continuous drain current (ID) of 100mA
a drain-to-source breakdown voltage of 1kV voltage
the turn-off delay time is 30 ns
based on its rated peak drain current 0.4 A.
a 1000V drain to source voltage (Vdss)


IXTP01N100D Applications


There are a lot of IXYS
IXTP01N100D applications of single MOSFETs transistors.


  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
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