IXTP01N100D

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

RoHS :

Details

Gate Charge (Qg) (Max) @ Vgs :

5.8 nC @ 5 V

Product Type :

MOSFET

Maximum Operating Temperature :

+ 150 C

Brand :

IXYS

Drain to Source Voltage (Vdss) :

1000V

FET Type :

N-Channel

Mount :

Through Hole

Input Capacitance (Ciss) (Max) @ Vds :

120pF @ 25V

Vgs(th) (Max) @ Id :

--

Radiation Hardening :

No

Package :

Tube

Minimum Operating Temperature :

- 55 C

Power Dissipation :

1.1W

Terminal Form :

THROUGH-HOLE

Rise Time :

6ns

Vgs (Max) :

±20V

Transistor Polarity :

N-Channel

Pulsed Drain Current-Max (IDM) :

0.4 A

Continuous Drain Current (ID) :

100mA

Polarity/Channel Type :

N-Channel

Mounting Type :

Through Hole

Drive Voltage (Max Rds On, Min Rds On) :

--

HTS Code :

8541.29.00.95

Drain-source On Resistance-Max :

110 Ω

Package / Case :

TO-220-3

Moisture Sensitivity Level (MSL) :

Not Applicable

Configuration :

Single

Gate to Source Voltage (Vgs) :

20V

Manufacturer :

IXYS

Width :

4.83 mm

Channel Mode :

Depletion

Pbfree Code :

yes

Packaging :

Tube

Reach Compliance Code :

Compliant

Number of Elements :

1

Current Rating :

4A

Published :

2001

Rds On (Max) @ Id, Vgs :

110 Ω @ 50mA, 0V

Case Connection :

DRAIN

Terminal Position :

Single

Lead Free :

Lead Free

Turn-Off Delay Time :

30 ns

Number of Terminals :

3

Product Category :

MOSFET

Operating Temperature :

-55°C~150°C TJ

Base Product Number :

IXTP01

Current - Continuous Drain (Id) @ 25°C :

100mA Tc

FET Feature :

Depletion Mode

Operating Mode :

Depletion Mode

Number of Terminations :

3

Mounting Style :

Through Hole

Surface Mount :

No

Qualification Status :

Not Qualified

Number of Pins :

3

Factory Lead Time :

8 Weeks

Pin Count :

3

Element Configuration :

Single

DS Breakdown Voltage-Min :

1000 V

Number of Channels :

1 Channel

Transistor Element Material :

SILICON

Product Status :

Active

JEDEC-95 Code :

TO-220AD

Supplier Device Package :

TO-220AB

Terminal Finish :

PURE TIN

JESD-30 Code :

R-PSFM-T3

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drain to Source Breakdown Voltage :

1kV

Voltage - Rated DC :

1kV

Series :

--

Power Dissipation-Max :

1.1W Ta 25W Tc

Transistor Type :

1 N-Channel

Height :

9.15 mm

Length :

10.66 mm

RoHS Status :

ROHS3 Compliant

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Package Shape :

RECTANGULAR

ECCN Code :

EAR99

JESD-609 Code :

e3

Power Dissipation (Max) :

1.1W (Ta), 25W (Tc)

Power Dissipation-Max (Abs) :

25 W

Transistor Application :

SWITCHING