IXTP01N100D
- Mfr.Part #
- IXTP01N100D
- Manufacturer
- Littelfuse
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 1000V 400MA TO220AB
- Stock
- 37,070
- In Stock :
- 37,070
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Polarity/Channel Type :
- N-Channel
- Supplier Device Package :
- TO-220AB
- Power Dissipation :
- 1.1W
- Maximum Operating Temperature :
- + 150 C
- Vgs(th) (Max) @ Id :
- --
- Terminal Position :
- Single
- Gate Charge (Qg) (Max) @ Vgs :
- 5.8 nC @ 5 V
- Drive Voltage (Max Rds On, Min Rds On) :
- --
- Drain to Source Breakdown Voltage :
- 1kV
- Terminal Finish :
- PURE TIN
- Pin Count :
- 3
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Packaging :
- Tube
- Reach Compliance Code :
- Compliant
- Number of Channels :
- 1 Channel
- ECCN Code :
- EAR99
- Product Type :
- MOSFET
- RoHS :
- Details
- Package :
- Tube
- Operating Mode :
- Depletion Mode
- Moisture Sensitivity Level (MSL) :
- Not Applicable
- Lead Free :
- Lead Free
- Factory Lead Time :
- 8 Weeks
- Radiation Hardening :
- No
- Current Rating :
- 4A
- Transistor Polarity :
- N-Channel
- DS Breakdown Voltage-Min :
- 1000 V
- Input Capacitance (Ciss) (Max) @ Vds :
- 120pF @ 25V
- Surface Mount :
- No
- Voltage - Rated DC :
- 1kV
- Transistor Element Material :
- SILICON
- Drain-source On Resistance-Max :
- 110 Ω
- Transistor Type :
- 1 N-Channel
- Channel Mode :
- Depletion
- Number of Terminations :
- 3
- Number of Pins :
- 3
- Length :
- 10.66 mm
- Height :
- 9.15 mm
- Qualification Status :
- Not Qualified
- Gate to Source Voltage (Vgs) :
- 20V
- Package / Case :
- TO-220-3
- Base Product Number :
- IXTP01
- Package Shape :
- RECTANGULAR
- Published :
- 2001
- Rise Time :
- 6ns
- JESD-30 Code :
- R-PSFM-T3
- Pulsed Drain Current-Max (IDM) :
- 0.4 A
- FET Type :
- N-Channel
- Power Dissipation (Max) :
- 1.1W (Ta), 25W (Tc)
- Mounting Type :
- Through Hole
- Power Dissipation-Max (Abs) :
- 25 W
- Number of Terminals :
- 3
- Current - Continuous Drain (Id) @ 25°C :
- 100mA Tc
- Series :
- --
- Power Dissipation-Max :
- 1.1W Ta 25W Tc
- Product Status :
- Active
- JESD-609 Code :
- e3
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Case Connection :
- DRAIN
- Terminal Form :
- THROUGH-HOLE
- Minimum Operating Temperature :
- - 55 C
- Rds On (Max) @ Id, Vgs :
- 110 Ω @ 50mA, 0V
- Operating Temperature :
- -55°C~150°C TJ
- Element Configuration :
- Single
- HTS Code :
- 8541.29.00.95
- Continuous Drain Current (ID) :
- 100mA
- Vgs (Max) :
- ±20V
- FET Feature :
- Depletion Mode
- Transistor Application :
- SWITCHING
- Product Category :
- MOSFET
- RoHS Status :
- ROHS3 Compliant
- Mounting Style :
- Through Hole
- Number of Elements :
- 1
- Turn-Off Delay Time :
- 30 ns
- JEDEC-95 Code :
- TO-220AD
- Drain to Source Voltage (Vdss) :
- 1000V
- Mount :
- Through Hole
- Width :
- 4.83 mm
- Configuration :
- Single
- Manufacturer :
- IXYS
- Pbfree Code :
- yes
- Brand :
- IXYS
- Datasheets
- IXTP01N100D
IXTP01N100D Documents

N-Channel Tube 110 Ω @ 50mA, 0V ±20V 120pF @ 25V 5.8 nC @ 5 V 1000V TO-220-3
IXTP01N100D Overview
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 120pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 100mA.With a drain-source breakdown voltage of 1kV and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 1kV.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 30 ns.Peak drain current for this device is 0.4 A, which is its maximum pulsed drain current.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.To maintain normal operation, the DS breakdown voltage should be kept above 1000 V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 1000V.
IXTP01N100D Features
a continuous drain current (ID) of 100mA
a drain-to-source breakdown voltage of 1kV voltage
the turn-off delay time is 30 ns
based on its rated peak drain current 0.4 A.
a 1000V drain to source voltage (Vdss)
IXTP01N100D Applications
There are a lot of IXYS
IXTP01N100D applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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