IXTP01N100D

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Mfr.Part #
IXTP01N100D
Manufacturer
Littelfuse
Package / Case
TO-220-3
Datasheet
Download
Description
MOSFET N-CH 1000V 400MA TO220AB
Stock
37,070
In Stock :
37,070

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Channel Mode :
Depletion
Operating Mode :
Depletion Mode
Package Shape :
RECTANGULAR
Gate to Source Voltage (Vgs) :
20V
Drive Voltage (Max Rds On, Min Rds On) :
--
Terminal Form :
THROUGH-HOLE
Number of Channels :
1 Channel
Drain to Source Voltage (Vdss) :
1000V
Mounting Type :
Through Hole
Current - Continuous Drain (Id) @ 25°C :
100mA Tc
Minimum Operating Temperature :
- 55 C
Supplier Device Package :
TO-220AB
Mounting Style :
Through Hole
Power Dissipation-Max :
1.1W Ta 25W Tc
Reach Compliance Code :
Compliant
JESD-30 Code :
R-PSFM-T3
Pbfree Code :
yes
Number of Terminals :
3
Number of Elements :
1
DS Breakdown Voltage-Min :
1000 V
Published :
2001
Radiation Hardening :
No
Maximum Operating Temperature :
+ 150 C
Product Category :
MOSFET
Qualification Status :
Not Qualified
Rise Time :
6ns
Input Capacitance (Ciss) (Max) @ Vds :
120pF @ 25V
Height :
9.15 mm
Series :
--
Moisture Sensitivity Level (MSL) :
Not Applicable
Drain-source On Resistance-Max :
110 Ω
Lead Free :
Lead Free
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Drain to Source Breakdown Voltage :
1kV
Rds On (Max) @ Id, Vgs :
110 Ω @ 50mA, 0V
Turn-Off Delay Time :
30 ns
Number of Terminations :
3
RoHS Status :
ROHS3 Compliant
Transistor Element Material :
SILICON
Configuration :
Single
Manufacturer :
IXYS
JEDEC-95 Code :
TO-220AD
ECCN Code :
EAR99
Terminal Finish :
PURE TIN
Package :
Tube
Factory Lead Time :
8 Weeks
Pulsed Drain Current-Max (IDM) :
0.4 A
Surface Mount :
No
Voltage - Rated DC :
1kV
Operating Temperature :
-55°C~150°C TJ
Power Dissipation :
1.1W
Power Dissipation (Max) :
1.1W (Ta), 25W (Tc)
Current Rating :
4A
Pin Count :
3
Transistor Polarity :
N-Channel
Width :
4.83 mm
Brand :
IXYS
Vgs(th) (Max) @ Id :
--
JESD-609 Code :
e3
Number of Pins :
3
Case Connection :
DRAIN
Continuous Drain Current (ID) :
100mA
Gate Charge (Qg) (Max) @ Vgs :
5.8 nC @ 5 V
RoHS :
Details
Length :
10.66 mm
Mount :
Through Hole
Transistor Application :
SWITCHING
Packaging :
Tube
HTS Code :
8541.29.00.95
Power Dissipation-Max (Abs) :
25 W
Product Status :
Active
Polarity/Channel Type :
N-Channel
Package / Case :
TO-220-3
Terminal Position :
Single
Vgs (Max) :
±20V
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Base Product Number :
IXTP01
Transistor Type :
1 N-Channel
Element Configuration :
Single
FET Feature :
Depletion Mode
Product Type :
MOSFET
FET Type :
N-Channel
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTP01N100D from Chip IC,where excellence meets affordability. This product stands out with its Number of Channels:1 Channel, Mounting Type:Through Hole, Number of Terminations:3, Operating Temperature:-55°C~150°C TJ, Number of Pins:3, Package / Case:TO-220-3, IXTP01N100D pinout, IXTP01N100D datasheet PDF, IXTP01N100D amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTP01N100D ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTP01N100D


N-Channel Tube 110 Ω @ 50mA, 0V ±20V 120pF @ 25V 5.8 nC @ 5 V 1000V TO-220-3

IXTP01N100D Overview


With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 120pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 100mA.With a drain-source breakdown voltage of 1kV and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 1kV.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 30 ns.Peak drain current for this device is 0.4 A, which is its maximum pulsed drain current.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.To maintain normal operation, the DS breakdown voltage should be kept above 1000 V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 1000V.

IXTP01N100D Features


a continuous drain current (ID) of 100mA
a drain-to-source breakdown voltage of 1kV voltage
the turn-off delay time is 30 ns
based on its rated peak drain current 0.4 A.
a 1000V drain to source voltage (Vdss)


IXTP01N100D Applications


There are a lot of IXYS
IXTP01N100D applications of single MOSFETs transistors.


  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
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