IXTP10P15T
- Mfr.Part #
- IXTP10P15T
- Manufacturer
- Littelfuse
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET P-CH 150V 10A TO220AB
- Stock
- 56
- In Stock :
- 56
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Package Shape :
- RECTANGULAR
- Number of Terminals :
- 3
- Mounting Type :
- Through Hole
- Brand :
- IXYS
- Qualification Status :
- Not Qualified
- Terminal Position :
- Single
- Vgs(th) (Max) @ Id :
- 4.5V @ 250μA
- Pulsed Drain Current-Max (IDM) :
- 30A
- Operating Temperature :
- -55°C~150°C TJ
- Package / Case :
- TO-220-3
- Product Type :
- MOSFET
- Pin Count :
- 3
- Terminal Form :
- THROUGH-HOLE
- Operating Mode :
- ENHANCEMENT MODE
- Package :
- Tube
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Published :
- 2010
- RoHS :
- Details
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Power Dissipation-Max :
- 83W Tc
- Mount :
- Through Hole
- Number of Terminations :
- 3
- Power Dissipation (Max) :
- 83W (Tc)
- DS Breakdown Voltage-Min :
- 150V
- Series :
- TrenchP™
- RoHS Status :
- ROHS3 Compliant
- Input Capacitance (Ciss) (Max) @ Vds :
- 2210pF @ 25V
- FET Type :
- P-Channel
- Factory Lead Time :
- 24 Weeks
- ECCN Code :
- EAR99
- Number of Channels :
- 1 Channel
- JEDEC-95 Code :
- TO-220AB
- Product Category :
- MOSFET
- Mounting Style :
- Through Hole
- Avalanche Energy Rating (Eas) :
- 200 mJ
- Drain Current-Max (Abs) (ID) :
- 10 A
- Maximum Operating Temperature :
- + 150 C
- Manufacturer :
- IXYS
- Transistor Element Material :
- SILICON
- Product Status :
- Active
- Continuous Drain Current (ID) :
- 10A
- Rds On (Max) @ Id, Vgs :
- 350m Ω @ 5A, 10V
- Gate Charge (Qg) (Max) @ Vgs :
- 36nC @ 10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Base Product Number :
- IXTP10
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- JESD-30 Code :
- R-PSFM-T3
- Transistor Application :
- SWITCHING
- Additional Feature :
- AVALANCHE RATED
- Drain to Source Voltage (Vdss) :
- 150V
- Case Connection :
- DRAIN
- Surface Mount :
- No
- Supplier Device Package :
- TO-220AB
- Polarity/Channel Type :
- P-Channel
- Power Dissipation-Max (Abs) :
- 83 W
- Minimum Operating Temperature :
- - 55 C
- Number of Elements :
- 1
- FET Feature :
- --
- Transistor Polarity :
- P-Channel
- Reach Compliance Code :
- Unknown
- Channel Mode :
- Enhancement
- Vgs (Max) :
- ±15V
- Packaging :
- Tube
- Current - Continuous Drain (Id) @ 25°C :
- 10A Tc
- Drain-source On Resistance-Max :
- 0.35Ohm
- Datasheets
- IXTP10P15T

P-Channel Tube 350m Ω @ 5A, 10V ±15V 2210pF @ 25V 36nC @ 10V 150V TO-220-3
IXTP10P15T Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 200 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 2210pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 10A continuous drain current (ID).Drain current refers to the maximum continuous current a device can conduct, and it is 10 A.Peak drain current is 30A, which is the maximum pulsed drain current.Normal operation requires that the DS breakdown voltage remain above 150V.For this transistor to work, a voltage 150V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
IXTP10P15T Features
the avalanche energy rating (Eas) is 200 mJ
a continuous drain current (ID) of 10A
based on its rated peak drain current 30A.
a 150V drain to source voltage (Vdss)
IXTP10P15T Applications
There are a lot of IXYS
IXTP10P15T applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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