IXTP08N100D2
- Mfr.Part #
- IXTP08N100D2
- Manufacturer
- Littelfuse
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 1000V 800MA TO220AB
- Stock
- 49,386
- In Stock :
- 49,386
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- RoHS Status :
- ROHS3 Compliant
- Mounting Type :
- Through Hole
- Mount :
- Through Hole
- Vgs (Max) :
- ±20V
- Case Connection :
- DRAIN
- Number of Elements :
- 1
- Channel Type :
- N Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 14.6nC @ 5V
- Maximum Operating Temperature :
- + 150 C
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- FET Feature :
- Depletion Mode
- Drive Voltage (Max Rds On, Min Rds On) :
- --
- Product Status :
- Active
- Mounting Style :
- Through Hole
- Base Product Number :
- IXTP08
- Product Category :
- MOSFET
- Qualification Status :
- Not Qualified
- Operating Temperature :
- -55°C~150°C TJ
- Vgs(th) (Max) @ Id :
- --
- Product Type :
- MOSFET
- Qualification :
- -
- Input Capacitance (Ciss) (Max) @ Vds :
- 325pF @ 25V
- Brand :
- IXYS
- Minimum Operating Temperature :
- - 55 C
- JEDEC-95 Code :
- TO-220AB
- Factory Lead Time :
- 24 Weeks
- Transistor Polarity :
- N-Channel
- Published :
- 2009
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Series :
- --
- Configuration :
- Single
- Lead Free :
- Lead Free
- Transistor Type :
- 1 N-Channel
- Current - Continuous Drain (Id) @ 25°C :
- 800mA Tc
- Rds On (Max) @ Id, Vgs :
- 21 Ω @ 400mA, 0V
- Continuous Drain Current Id :
- 800mA
- Number of Terminations :
- 3
- Power Dissipation-Max :
- 60W Tc
- Reach Compliance Code :
- Unknown
- Transistor Element Material :
- SILICON
- Pin Count :
- 3
- Supplier Device Package :
- TO-220AB
- Pbfree Code :
- yes
- FET Type :
- N-Channel
- Manufacturer :
- IXYS
- Drain to Source Voltage (Vdss) :
- 1000V
- Rise Time :
- 57 ns
- RoHS :
- Details
- Gate to Source Voltage (Vgs) :
- 20V
- Package / Case :
- TO-220-3
- Packaging :
- Tube
- Number of Channels :
- 1 Channel
- Channel Mode :
- Depletion
- Number of Pins :
- 3
- Power Dissipation :
- 60W
- Transistor Application :
- SWITCHING
- Power Dissipation (Max) :
- 60W (Tc)
- Continuous Drain Current (ID) :
- 800mA
- Package :
- Tube
- Element Configuration :
- Single
- Drain to Source Breakdown Voltage :
- 1kV
- Datasheets
- IXTP08N100D2
IXTP08N100D2 Documents

N-Channel Tube 21 Ω @ 400mA, 0V ±20V 325pF @ 25V 14.6nC @ 5V 1000V TO-220-3
IXTP08N100D2 Description
IXTP08N100D2 is a 1000V N-Channel Depletion Mode MOSFET. Thanks to the depletion type MOSFET's special characteristics, it provides higher efficiency and ruggedness as well as a wider operating range for SMPS and LED lighting. A depletion power MOSFET can also be used as a voltage regulator. Depletion mode devices have an open channel for free carriers to flow between the drain and source. Applying a voltage with the proper polarity between the gate and source, the carriers in the channel are essentially “depleted.” When the channel between the source and drain squeezes or “pinches off,” it rejects additional free carriers to flow through it.
IXTP08N100D2 Features
Normally ON Mode
International Standard Packages
Molding Epoxies Meet UL94V-0 Flammability Classification
VDSX TJ = 25℃ to 150℃: 1000V
PD TC = 25℃: 60 W
IXTP08N100D2 Applications
Audio Amplifiers
Start-up Circuits
Protection Circuits
Ramp Generators
Current Regulators
Active Loads
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