IXTP90N15T

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Mfr.Part #
IXTP90N15T
Manufacturer
Littelfuse
Package / Case
TO-220-3
Datasheet
Download
Description
MOSFET N-CH 150V 90A TO220AB
Stock
11
In Stock :
11

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Series :
--
Turn-Off Delay Time :
44 ns
Drain to Source Breakdown Voltage :
150V
Additional Feature :
AVALANCHE RATED
Avalanche Energy Rating (Eas) :
0.75 mJ
RoHS Status :
ROHS3 Compliant
Rds On (Max) @ Id, Vgs :
20m Ω @ 45A, 10V
Mounting Type :
Through Hole
Gate Charge (Qg) (Max) @ Vgs :
80nC @ 10V
Element Configuration :
Single
Current - Continuous Drain (Id) @ 25°C :
90A Tc
Vgs (Max) :
±30V
DS Breakdown Voltage-Min :
150 V
FET Type :
N-Channel
Published :
2007
Transistor Element Material :
SILICON
Reach Compliance Code :
Compliant
Number of Terminations :
3
JESD-30 Code :
R-PSFM-T3
Transistor Application :
SWITCHING
Configuration :
SINGLE WITH BUILT-IN DIODE
Product Status :
Active
Number of Terminals :
3
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Drain-source On Resistance-Max :
0.02Ohm
Pbfree Code :
yes
Operating Mode :
ENHANCEMENT MODE
Packaging :
Tube
Base Product Number :
IXTP90
FET Feature :
--
Vgs(th) (Max) @ Id :
4.5V @ 1mA
Drive Voltage (Max Rds On,Min Rds On) :
10V
JESD-609 Code :
e3
Case Connection :
DRAIN
Terminal Finish :
Matte Tin (Sn)
Manufacturer :
IXYS Corporation
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Terminal Position :
Single
Pin Count :
3
JEDEC-95 Code :
TO-220AB
ECCN Code :
EAR99
Supplier Device Package :
TO-220AB
Power Dissipation-Max :
455W Tc
Package / Case :
TO-220-3
Input Capacitance (Ciss) (Max) @ Vds :
4100pF @ 25V
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Fall Time (Typ) :
19 ns
Operating Temperature :
-55°C~175°C TJ
Pulsed Drain Current-Max (IDM) :
250A
Drain to Source Voltage (Vdss) :
150V
Mount :
Through Hole
Power Dissipation (Max) :
455W (Tc)
Power Dissipation :
455W
Surface Mount :
No
Terminal Form :
THROUGH-HOLE
Number of Elements :
1
Package Shape :
RECTANGULAR
Gate to Source Voltage (Vgs) :
30V
Continuous Drain Current (ID) :
90A
Qualification Status :
Not Qualified
Rise Time :
22ns
Polarity/Channel Type :
N-Channel
Package :
Tube
Datasheets
IXTP90N15T
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTP90N15T from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Number of Terminations:3, Package / Case:TO-220-3, Operating Temperature:-55°C~175°C TJ, IXTP90N15T pinout, IXTP90N15T datasheet PDF, IXTP90N15T amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTP90N15T ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTP90N15T


N-Channel Tube 20m Ω @ 45A, 10V ±30V 4100pF @ 25V 80nC @ 10V 150V TO-220-3

IXTP90N15T Overview


This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 0.75 mJ.The maximum input capacitance of this device is 4100pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 90A.When VGS=150V, and ID flows to VDS at 150VVDS, the drain-source breakdown voltage is 150V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 44 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 250A.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 150 V.The drain-to-source voltage (Vdss) of this transistor needs to be at 150V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.

IXTP90N15T Features


the avalanche energy rating (Eas) is 0.75 mJ
a continuous drain current (ID) of 90A
a drain-to-source breakdown voltage of 150V voltage
the turn-off delay time is 44 ns
based on its rated peak drain current 250A.
a 150V drain to source voltage (Vdss)


IXTP90N15T Applications


There are a lot of IXYS
IXTP90N15T applications of single MOSFETs transistors.


  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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