IXTP90N075T2
- Mfr.Part #
- IXTP90N075T2
- Manufacturer
- Littelfuse
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 75V 90A TO220AB
- Stock
- 43,152
- In Stock :
- 43,152
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drain to Source Breakdown Voltage :
- 75V
- Additional Feature :
- AVALANCHE RATED
- Manufacturer :
- IXYS
- Gate Charge (Qg) (Max) @ Vgs :
- 54nC @ 10V
- Power Dissipation-Max :
- 180W Tc
- Height :
- 9.15 mm
- Reach Compliance Code :
- Compliant
- Power Dissipation (Max) :
- 180W (Tc)
- Operating Temperature :
- -55°C~175°C TJ
- Qualification Status :
- Not Qualified
- Transistor Element Material :
- SILICON
- RoHS Status :
- RoHS Compliant
- FET Feature :
- --
- Element Configuration :
- Single
- Packaging :
- Tube
- Turn-Off Delay Time :
- 35 ns
- Avalanche Energy Rating (Eas) :
- 400 mJ
- Base Product Number :
- IXTP90
- JEDEC-95 Code :
- TO-220AB
- Brand :
- IXYS
- Maximum Operating Temperature :
- + 175 C
- Product Status :
- Obsolete
- Transistor Type :
- 1 N-Channel
- Pbfree Code :
- yes
- Pulsed Drain Current-Max (IDM) :
- 225A
- Rds On (Max) @ Id, Vgs :
- 10m Ω @ 25A, 10V
- ECCN Code :
- EAR99
- Drain-source On Resistance-Max :
- 0.01Ohm
- Gate to Source Voltage (Vgs) :
- 20V
- Series :
- TrenchT2™
- Number of Elements :
- 1
- Operating Mode :
- ENHANCEMENT MODE
- Vgs (Max) :
- ±20V
- Minimum Operating Temperature :
- - 55 C
- Pin Count :
- 3
- Number of Terminations :
- 3
- JESD-30 Code :
- R-PSFM-T3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- RoHS :
- Details
- Package :
- Tube
- Rise Time :
- 28ns
- Width :
- 4.83 mm
- Mounting Type :
- Through Hole
- Published :
- 2009
- Continuous Drain Current (ID) :
- 90A
- Case Connection :
- DRAIN
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Power Dissipation :
- 180W
- Length :
- 10.66 mm
- Product Type :
- MOSFET
- Tradename :
- HiPerFET
- Package / Case :
- TO-220-3
- Transistor Application :
- SWITCHING
- FET Type :
- N-Channel
- Input Capacitance (Ciss) (Max) @ Vds :
- 3290pF @ 25V
- Drain to Source Voltage (Vdss) :
- 75V
- Supplier Device Package :
- TO-220AB
- Mount :
- Through Hole
- Mounting Style :
- Through Hole
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Transistor Polarity :
- N-Channel
- Channel Mode :
- Enhancement
- Configuration :
- Single
- Number of Channels :
- 1 Channel
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Current - Continuous Drain (Id) @ 25°C :
- 90A Tc
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Product Category :
- MOSFET
- Fall Time (Typ) :
- 20 ns
- Datasheets
- IXTP90N075T2

N-Channel Tube 10m Ω @ 25A, 10V ±20V 3290pF @ 25V 54nC @ 10V 75V TO-220-3
IXTP90N075T2 Overview
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 400 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 3290pF @ 25V.This device conducts a continuous drain current (ID) of 90A, which is the maximum continuous current transistor can conduct.Using VGS=75V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 75V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 35 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 225A.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.This transistor requires a drain-source voltage (Vdss) of 75V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
IXTP90N075T2 Features
the avalanche energy rating (Eas) is 400 mJ
a continuous drain current (ID) of 90A
a drain-to-source breakdown voltage of 75V voltage
the turn-off delay time is 35 ns
based on its rated peak drain current 225A.
a 75V drain to source voltage (Vdss)
IXTP90N075T2 Applications
There are a lot of IXYS
IXTP90N075T2 applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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