IXTP90N075T2

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Mfr.Part #
IXTP90N075T2
Manufacturer
Littelfuse
Package / Case
TO-220-3
Datasheet
Download
Description
MOSFET N-CH 75V 90A TO220AB
Stock
43,152
In Stock :
43,152

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Drain to Source Breakdown Voltage :
75V
Additional Feature :
AVALANCHE RATED
Manufacturer :
IXYS
Gate Charge (Qg) (Max) @ Vgs :
54nC @ 10V
Power Dissipation-Max :
180W Tc
Height :
9.15 mm
Reach Compliance Code :
Compliant
Power Dissipation (Max) :
180W (Tc)
Operating Temperature :
-55°C~175°C TJ
Qualification Status :
Not Qualified
Transistor Element Material :
SILICON
RoHS Status :
RoHS Compliant
FET Feature :
--
Element Configuration :
Single
Packaging :
Tube
Turn-Off Delay Time :
35 ns
Avalanche Energy Rating (Eas) :
400 mJ
Base Product Number :
IXTP90
JEDEC-95 Code :
TO-220AB
Brand :
IXYS
Maximum Operating Temperature :
+ 175 C
Product Status :
Obsolete
Transistor Type :
1 N-Channel
Pbfree Code :
yes
Pulsed Drain Current-Max (IDM) :
225A
Rds On (Max) @ Id, Vgs :
10m Ω @ 25A, 10V
ECCN Code :
EAR99
Drain-source On Resistance-Max :
0.01Ohm
Gate to Source Voltage (Vgs) :
20V
Series :
TrenchT2™
Number of Elements :
1
Operating Mode :
ENHANCEMENT MODE
Vgs (Max) :
±20V
Minimum Operating Temperature :
- 55 C
Pin Count :
3
Number of Terminations :
3
JESD-30 Code :
R-PSFM-T3
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
RoHS :
Details
Package :
Tube
Rise Time :
28ns
Width :
4.83 mm
Mounting Type :
Through Hole
Published :
2009
Continuous Drain Current (ID) :
90A
Case Connection :
DRAIN
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Power Dissipation :
180W
Length :
10.66 mm
Product Type :
MOSFET
Tradename :
HiPerFET
Package / Case :
TO-220-3
Transistor Application :
SWITCHING
FET Type :
N-Channel
Input Capacitance (Ciss) (Max) @ Vds :
3290pF @ 25V
Drain to Source Voltage (Vdss) :
75V
Supplier Device Package :
TO-220AB
Mount :
Through Hole
Mounting Style :
Through Hole
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Transistor Polarity :
N-Channel
Channel Mode :
Enhancement
Configuration :
Single
Number of Channels :
1 Channel
Drive Voltage (Max Rds On,Min Rds On) :
10V
Current - Continuous Drain (Id) @ 25°C :
90A Tc
Vgs(th) (Max) @ Id :
4V @ 250µA
Product Category :
MOSFET
Fall Time (Typ) :
20 ns
Datasheets
IXTP90N075T2
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTP90N075T2 from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~175°C TJ, Number of Terminations:3, Mounting Type:Through Hole, Package / Case:TO-220-3, Number of Channels:1 Channel, IXTP90N075T2 pinout, IXTP90N075T2 datasheet PDF, IXTP90N075T2 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTP90N075T2 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTP90N075T2


N-Channel Tube 10m Ω @ 25A, 10V ±20V 3290pF @ 25V 54nC @ 10V 75V TO-220-3

IXTP90N075T2 Overview


In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 400 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 3290pF @ 25V.This device conducts a continuous drain current (ID) of 90A, which is the maximum continuous current transistor can conduct.Using VGS=75V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 75V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 35 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 225A.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.This transistor requires a drain-source voltage (Vdss) of 75V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).

IXTP90N075T2 Features


the avalanche energy rating (Eas) is 400 mJ
a continuous drain current (ID) of 90A
a drain-to-source breakdown voltage of 75V voltage
the turn-off delay time is 35 ns
based on its rated peak drain current 225A.
a 75V drain to source voltage (Vdss)


IXTP90N075T2 Applications


There are a lot of IXYS
IXTP90N075T2 applications of single MOSFETs transistors.


  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
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