IXTP90N055T2

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Reach Compliance Code :

Unknown

Gate to Source Voltage (Vgs) :

20V

Height :

16 mm

JESD-609 Code :

e1

Input Capacitance (Ciss) (Max) @ Vds :

2770pF @ 25V

Qualification Status :

Not Qualified

Pulsed Drain Current-Max (IDM) :

230A

Vgs(th) (Max) @ Id :

4V @ 250µA

Rise Time :

21ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Series :

TrenchT2™

Configuration :

Single

Avalanche Energy Rating (Eas) :

300 mJ

Transistor Polarity :

N-Channel

Vgs (Max) :

±20V

Brand :

IXYS

Turn-Off Delay Time :

39 ns

Element Configuration :

Single

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Mounting Style :

Through Hole

Manufacturer :

IXYS

Tradename :

HiPerFET

Transistor Element Material :

SILICON

Drive Voltage (Max Rds On,Min Rds On) :

10V

Package :

Tube

Mount :

Through Hole

Rds On (Max) @ Id, Vgs :

8.4m Ω @ 25A, 10V

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Minimum Operating Temperature :

- 55 C

Channel Mode :

Enhancement

Fall Time (Typ) :

19 ns

FET Feature :

--

Length :

10.66 mm

JESD-30 Code :

R-PSFM-T3

Drain-source On Resistance-Max :

0.0084Ohm

RoHS Status :

ROHS3 Compliant

Power Dissipation-Max :

150W Tc

Type :

TrenchT2 Power MOSFET

Operating Temperature :

-55°C~175°C TJ

Pbfree Code :

yes

Base Product Number :

IXTP90

Pin Count :

3

Product Type :

MOSFET

RoHS :

Details

Case Connection :

DRAIN

Number of Elements :

1

Product Category :

MOSFET

Additional Feature :

AVALANCHE RATED

Power Dissipation (Max) :

150W (Tc)

Drain to Source Voltage (Vdss) :

55V

Package / Case :

TO-220-3

FET Type :

N-Channel

Product Status :

Active

Number of Channels :

1 Channel

Mounting Type :

Through Hole

Supplier Device Package :

TO-220AB

Maximum Operating Temperature :

+ 175 C

Packaging :

Tube

Continuous Drain Current (ID) :

90A

Operating Mode :

ENHANCEMENT MODE

JEDEC-95 Code :

TO-220AB

Published :

2012

ECCN Code :

EAR99

Number of Terminations :

3

Power Dissipation :

150W

Transistor Type :

1 N-Channel

Factory Lead Time :

24 Weeks

Transistor Application :

SWITCHING

Gate Charge (Qg) (Max) @ Vgs :

42nC @ 10V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Current - Continuous Drain (Id) @ 25°C :

90A Tc

Drain to Source Breakdown Voltage :

55V

Width :

4.83 mm